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IXGH45N120

IXYS IXGH45N120

Part Number:
IXGH45N120
Manufacturer:
IXYS
Ventron No:
2854551-IXGH45N120
Description:
IGBT 1200V 75A 300W TO247
ECAD Model:
Datasheet:
IXGH45N120

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Specifications
IXYS IXGH45N120 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH45N120.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2001
  • Pbfree Code
    yes
  • Part Status
    Active
  • Number of Terminations
    3
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    300W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    75A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Rise Time
    28ns
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    75A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time
    96 ns
  • Test Condition
    960V, 45A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 45A
  • Turn Off Time-Nom (toff)
    1400 ns
  • Gate Charge
    170nC
  • Current - Collector Pulsed (Icm)
    180A
  • Td (on/off) @ 25°C
    55ns/370ns
  • Switching Energy
    14mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    700ns
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGH45N120 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH45N120 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH45N120. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH45N120 More Descriptions
Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3 Tab) TO-247AD
IGBT 1200V 75A 300W TO247
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGH45N120.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Number of Terminations
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Lead Free
    Moisture Sensitivity Level (MSL)
    Terminal Position
    JESD-30 Code
    Configuration
    Power - Max
    IGBT Type
    JESD-609 Code
    Terminal Finish
    Base Part Number
    Radiation Hardening
    Reverse Recovery Time
    View Compare
  • IXGH45N120
    IXGH45N120
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Bulk
    2001
    yes
    Active
    3
    Insulated Gate BIP Transistors
    1.2kV
    300W
    NOT SPECIFIED
    75A
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    300W
    COLLECTOR
    Standard
    POWER CONTROL
    28ns
    N-CHANNEL
    1.2kV
    75A
    TO-247AD
    1.2kV
    1200V
    96 ns
    960V, 45A, 5 Ω, 15V
    2.5V @ 15V, 45A
    1400 ns
    170nC
    180A
    55ns/370ns
    14mJ (off)
    20V
    5V
    700ns
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH24N60C4
    IXGH24N60C4
    IXYS
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2012
    yes
    Obsolete
    3
    Insulated Gate BIP Transistors
    -
    190W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    Not Qualified
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    2.7V
    56A
    TO-247AD
    600V
    -
    52 ns
    360V, 24A, 10 Ω, 15V
    2.7V @ 15V, 24A
    248 ns
    64nC
    130A
    21ns/143ns
    400μJ (on), 300μJ (off)
    20V
    5V
    -
    RoHS Compliant
    -
    1 (Unlimited)
    SINGLE
    R-PSFM-T3
    SINGLE
    190W
    PT
    -
    -
    -
    -
    -
    IXGH45N120 vs IXGH24N60C4
  • IXGH17N100
    IXGH17N100
    IXYS
    18 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    1997
    yes
    Active
    3
    Insulated Gate BIP Transistors
    -
    150W
    -
    -
    -
    3
    -
    1
    Single
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    1kV
    34A
    TO-247AD
    1kV
    1000V
    300 ns
    800V, 17A, 82 Ω, 15V
    3.5V @ 15V, 17A
    1900 ns
    100nC
    68A
    100ns/500ns
    3mJ (off)
    20V
    5V
    -
    ROHS3 Compliant
    Lead Free
    1 (Unlimited)
    -
    -
    -
    150W
    -
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    IXG*17N100
    No
    -
    IXGH45N120 vs IXGH17N100
  • IXGH16N170AH1
    IXGH16N170AH1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    6.500007g
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    yes
    Obsolete
    3
    Insulated Gate BIP Transistors
    -
    190W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    MOTOR CONTROL
    -
    N-CHANNEL
    1.7kV
    16A
    TO-247AD
    1.7kV
    1700V
    97 ns
    850V, 16A, 10 Ω, 15V
    5V @ 15V, 11A
    330 ns
    65nC
    40A
    36ns/160ns
    900μJ (off)
    20V
    5V
    150ns
    RoHS Compliant
    Lead Free
    1 (Unlimited)
    -
    R-PSFM-T3
    -
    190W
    NPT
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    IXG*16N170
    -
    230 ns
    IXGH45N120 vs IXGH16N170AH1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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