IXFN48N50

IXYS IXFN48N50

Part Number:
IXFN48N50
Manufacturer:
IXYS
Ventron No:
2478535-IXFN48N50
Description:
MOSFET N-CH 500V 48A SOT-227B
ECAD Model:
Datasheet:
IXFN48N50

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Specifications
IXYS IXFN48N50 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFN48N50.
  • Factory Lead Time
    8 Weeks
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    SOT-227-4, miniBLOC
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2002
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    100mOhm
  • Terminal Finish
    Nickel (Ni)
  • Additional Feature
    AVALANCHE RATED
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    48A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • JESD-30 Code
    R-PUFM-X4
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    520W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    520W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 8mA
  • Input Capacitance (Ciss) (Max) @ Vds
    8400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    48A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    270nC @ 10V
  • Rise Time
    60ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    100 ns
  • Continuous Drain Current (ID)
    48A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    192A
  • Dual Supply Voltage
    500V
  • Nominal Vgs
    4 V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXFN48N50 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8400pF @ 25V.This device conducts a continuous drain current (ID) of 48A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 192A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFN48N50 Features
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 192A.
a threshold voltage of 4V


IXFN48N50 Applications
There are a lot of IXYS
IXFN48N50 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFN48N50 More Descriptions
Trans MOSFET N-CH 500V 48A 4-Pin SOT-227B
Mosfet, N Channel, 500V, 48A, Sot-227B; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; Transistor Mounting:Module; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXFN48N50
MOSFETs w/Fast Intrinsic Diode
Product Comparison
The three parts on the right have similar specifications to IXFN48N50.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    View Compare
  • IXFN48N50
    IXFN48N50
    8 Weeks
    Chassis Mount, Screw
    Chassis Mount
    SOT-227-4, miniBLOC
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2002
    yes
    Not For New Designs
    Not Applicable
    4
    EAR99
    100mOhm
    Nickel (Ni)
    AVALANCHE RATED
    8541.29.00.95
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    48A
    NOT SPECIFIED
    4
    R-PUFM-X4
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    520W Tc
    ENHANCEMENT MODE
    520W
    DRAIN
    N-Channel
    SWITCHING
    100m Ω @ 500mA, 10V
    4V @ 8mA
    8400pF @ 25V
    48A Tc
    270nC @ 10V
    60ns
    10V
    ±20V
    30 ns
    100 ns
    48A
    4V
    20V
    500V
    192A
    500V
    4 V
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFN32N100P
    30 Weeks
    Chassis Mount, Screw
    Chassis Mount
    SOT-227-4, miniBLOC
    4
    -
    -55°C~150°C TJ
    Tube
    Polar™
    2007
    -
    Active
    1 (Unlimited)
    -
    -
    320mOhm
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    690W Tc
    -
    690W
    -
    N-Channel
    -
    320mOhm @ 16A, 10V
    6.5V @ 1mA
    14200pF @ 25V
    27A Tc
    225nC @ 10V
    55ns
    10V
    ±30V
    43 ns
    76 ns
    27A
    -
    30V
    1kV
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    SOT-227B
    150°C
    -55°C
    1000V
    14.2nF
    320mOhm
    320 mΩ
    No
  • IXFN24N100F
    10 Weeks
    -
    Chassis Mount
    SOT-227-4, miniBLOC
    4
    -
    -55°C~150°C TJ
    Tube
    HiPerRF™
    2002
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    600W Tc
    -
    600W
    -
    N-Channel
    -
    390mOhm @ 12A, 10V
    5.5V @ 8mA
    6600pF @ 25V
    24A Tc
    195nC @ 10V
    18ns
    10V
    ±20V
    11 ns
    52 ns
    24A
    -
    20V
    1kV
    -
    -
    -
    No SVHC
    RoHS Compliant
    -
    SOT-227B
    150°C
    -55°C
    1000V
    -
    390mOhm
    -
    -
  • IXFN280N085
    8 Weeks
    Chassis Mount, Screw
    Chassis Mount
    SOT-227-4, miniBLOC
    4
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2008
    yes
    Obsolete
    1 (Unlimited)
    4
    EAR99
    390mOhm
    Nickel (Ni)
    AVALANCHE RATED, UL RECOGNIZED
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    UPPER
    UNSPECIFIED
    -
    -
    -
    4
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    700W Tc
    ENHANCEMENT MODE
    700W
    ISOLATED
    N-Channel
    SWITCHING
    4.4m Ω @ 100A, 10V
    4V @ 8mA
    19000pF @ 25V
    280A Tc
    580nC @ 10V
    95ns
    10V
    ±20V
    33 ns
    200 ns
    280A
    -
    20V
    85V
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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