IXYS IXFN48N50 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFN48N50.
- Factory Lead Time8 Weeks
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSOT-227-4, miniBLOC
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2002
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations4
- ECCN CodeEAR99
- Resistance100mOhm
- Terminal FinishNickel (Ni)
- Additional FeatureAVALANCHE RATED
- HTS Code8541.29.00.95
- SubcategoryFET General Purpose Power
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating48A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PUFM-X4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max520W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation520W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id4V @ 8mA
- Input Capacitance (Ciss) (Max) @ Vds8400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C48A Tc
- Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
- Rise Time60ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time100 ns
- Continuous Drain Current (ID)48A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)192A
- Dual Supply Voltage500V
- Nominal Vgs4 V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFN48N50 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8400pF @ 25V.This device conducts a continuous drain current (ID) of 48A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 192A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFN48N50 Features
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 192A.
a threshold voltage of 4V
IXFN48N50 Applications
There are a lot of IXYS
IXFN48N50 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8400pF @ 25V.This device conducts a continuous drain current (ID) of 48A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 192A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFN48N50 Features
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 192A.
a threshold voltage of 4V
IXFN48N50 Applications
There are a lot of IXYS
IXFN48N50 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFN48N50 More Descriptions
Trans MOSFET N-CH 500V 48A 4-Pin SOT-227B
Mosfet, N Channel, 500V, 48A, Sot-227B; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; Transistor Mounting:Module; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXFN48N50
MOSFETs w/Fast Intrinsic Diode
Mosfet, N Channel, 500V, 48A, Sot-227B; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; Transistor Mounting:Module; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXFN48N50
MOSFETs w/Fast Intrinsic Diode
The three parts on the right have similar specifications to IXFN48N50.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsREACH SVHCRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningView Compare
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IXFN48N508 WeeksChassis Mount, ScrewChassis MountSOT-227-4, miniBLOC3SILICON-55°C~150°C TJTubeHiPerFET™2002yesNot For New DesignsNot Applicable4EAR99100mOhmNickel (Ni)AVALANCHE RATED8541.29.00.95FET General Purpose Power500VMOSFET (Metal Oxide)UPPERUNSPECIFIEDNOT SPECIFIED48ANOT SPECIFIED4R-PUFM-X4Not Qualified1SINGLE WITH BUILT-IN DIODE520W TcENHANCEMENT MODE520WDRAINN-ChannelSWITCHING100m Ω @ 500mA, 10V4V @ 8mA8400pF @ 25V48A Tc270nC @ 10V60ns10V±20V30 ns100 ns48A4V20V500V192A500V4 VNo SVHCROHS3 CompliantLead Free---------
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30 WeeksChassis Mount, ScrewChassis MountSOT-227-4, miniBLOC4--55°C~150°C TJTubePolar™2007-Active1 (Unlimited)--320mOhm-----MOSFET (Metal Oxide)--------1-690W Tc-690W-N-Channel-320mOhm @ 16A, 10V6.5V @ 1mA14200pF @ 25V27A Tc225nC @ 10V55ns10V±30V43 ns76 ns27A-30V1kV----ROHS3 CompliantLead FreeSOT-227B150°C-55°C1000V14.2nF320mOhm320 mΩNo
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10 Weeks-Chassis MountSOT-227-4, miniBLOC4--55°C~150°C TJTubeHiPerRF™2002-Obsolete1 (Unlimited)--------MOSFET (Metal Oxide)----------600W Tc-600W-N-Channel-390mOhm @ 12A, 10V5.5V @ 8mA6600pF @ 25V24A Tc195nC @ 10V18ns10V±20V11 ns52 ns24A-20V1kV---No SVHCRoHS Compliant-SOT-227B150°C-55°C1000V-390mOhm--
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8 WeeksChassis Mount, ScrewChassis MountSOT-227-4, miniBLOC4SILICON-55°C~150°C TJTubeHiPerFET™2008yesObsolete1 (Unlimited)4EAR99390mOhmNickel (Ni)AVALANCHE RATED, UL RECOGNIZED-FET General Purpose Power-MOSFET (Metal Oxide)UPPERUNSPECIFIED---4--1SINGLE WITH BUILT-IN DIODE700W TcENHANCEMENT MODE700WISOLATEDN-ChannelSWITCHING4.4m Ω @ 100A, 10V4V @ 8mA19000pF @ 25V280A Tc580nC @ 10V95ns10V±20V33 ns200 ns280A-20V85V----RoHS CompliantLead Free-------No
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