IXYS IXBK75N170
- Part Number:
- IXBK75N170
- Manufacturer:
- IXYS
- Ventron No:
- 3554861-IXBK75N170
- Description:
- IGBT 1700V 200A 1040W TO264
- ECAD Model:
-
- Datasheet:
- IXBK75N170
IXYS IXBK75N170 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBK75N170.
- Factory Lead Time28 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-264-3, TO-264AA
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesBIMOSFET™
- Published2003
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation1.04kW
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXB*75N170
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max1040W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)3.1V
- Max Collector Current200A
- Reverse Recovery Time1.5 μs
- Collector Emitter Breakdown Voltage1.7kV
- Voltage - Collector Emitter Breakdown (Max)1700V
- Turn On Time277 ns
- Vce(on) (Max) @ Vge, Ic3.1V @ 15V, 75A
- Turn Off Time-Nom (toff)840 ns
- Gate Charge350nC
- Current - Collector Pulsed (Icm)580A
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.5V
- RoHS StatusROHS3 Compliant
IXBK75N170 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBK75N170 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBK75N170. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBK75N170 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBK75N170. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXBK75N170 More Descriptions
High Voltage Series - 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs, TO-264AA, RoHSLittelfuse SCT
Transistor, Igbt, 1.7Kv, 200A, To-264; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.6V; Power Dissipation:1.04Kw; Collector Emitter Voltage Max:1.7Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXBK75N170
DISC IGBT 1700V TO264-3
IGBT BIMOSFET-HIGH VOLT
Transistor, Igbt, 1.7Kv, 200A, To-264; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.6V; Power Dissipation:1.04Kw; Collector Emitter Voltage Max:1.7Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXBK75N170
DISC IGBT 1700V TO264-3
IGBT BIMOSFET-HIGH VOLT
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