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IXBH16N170

IXYS IXBH16N170

Part Number:
IXBH16N170
Manufacturer:
IXYS
Ventron No:
2854677-IXBH16N170
Description:
IGBT 1700V 40A 250W TO247AD
ECAD Model:
Datasheet:
IXBH16N170

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Specifications
IXYS IXBH16N170 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBH16N170.
  • Factory Lead Time
    28 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Series
    BIMOSFET™
  • Published
    2008
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    1.7kV
  • Max Power Dissipation
    250W
  • Current Rating
    16A
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    15 ns
  • Power - Max
    250W
  • Transistor Application
    POWER CONTROL
  • Rise Time
    25ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    160 ns
  • Collector Emitter Voltage (VCEO)
    1.7kV
  • Max Collector Current
    40A
  • Reverse Recovery Time
    1.32 μs
  • Collector Emitter Breakdown Voltage
    1.7kV
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Turn On Time
    220 ns
  • Vce(on) (Max) @ Vge, Ic
    3.3V @ 15V, 16A
  • Turn Off Time-Nom (toff)
    940 ns
  • Gate Charge
    72nC
  • Current - Collector Pulsed (Icm)
    120A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXBH16N170 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBH16N170 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBH16N170. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXBH16N170 More Descriptions
Trans IGBT Chip N-CH 1700V 40A 250000mW 3-Pin(3 Tab) TO-247AD
IXBH Series 1700 Vce 40 A 38 ns t(on) Bipolar MOS Transistor - TO-247
IGBT 1700V 40A 250W TO247AD
OEMs, CMs ONLY (NO BROKERS)
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXBH16N170.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Fall Time (Typ)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Drain to Source Resistance
    Collector Emitter Saturation Voltage
    Test Condition
    Td (on/off) @ 25°C
    Switching Energy
    View Compare
  • IXBH16N170
    IXBH16N170
    IXYS
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Bulk
    BIMOSFET™
    2008
    e1
    yes
    Active
    Not Applicable
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    1.7kV
    250W
    16A
    3
    1
    Single
    150W
    COLLECTOR
    Standard
    15 ns
    250W
    POWER CONTROL
    25ns
    N-CHANNEL
    160 ns
    1.7kV
    40A
    1.32 μs
    1.7kV
    1700V
    220 ns
    3.3V @ 15V, 16A
    940 ns
    72nC
    120A
    20V
    5.5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXBH24N170
    IXBH24N170
    IXYS
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2006
    e1
    yes
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    -
    250W
    -
    3
    1
    Single
    38W
    COLLECTOR
    Standard
    -
    250W
    POWER CONTROL
    28ns
    N-CHANNEL
    65 ns
    2.5V
    60A
    1.06 μs
    1.7kV
    1700V
    190 ns
    2.5V @ 15V, 24A
    1285 ns
    140nC
    230A
    20V
    5V
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    26 ns
    3.2A
    TO-247AD
    30V
    500V
    1.4Ohm
    -
    -
    -
    -
    IXBH16N170 vs IXBH24N170
  • IXBH28N170A
    IXBH28N170A
    IXYS
    18 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2005
    -
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    -
    -
    300W
    -
    3
    1
    Single
    -
    COLLECTOR
    Standard
    -
    300W
    POWER CONTROL
    -
    N-CHANNEL
    -
    6V
    30A
    360 ns
    1.7kV
    1700V
    -
    6V @ 15V, 14A
    -
    105nC
    60A
    -
    -
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    Not Qualified
    -
    -
    TO-247AD
    -
    -
    -
    4.7V
    850V, 14A, 10 Ω, 15V
    35ns/265ns
    1.2mJ (off)
    IXBH16N170 vs IXBH28N170A
  • IXBH6N170
    IXBH6N170
    IXYS
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2008
    e1
    yes
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    -
    75W
    -
    3
    1
    Single
    -
    COLLECTOR
    Standard
    -
    75W
    POWER CONTROL
    -
    N-CHANNEL
    -
    1.7kV
    12A
    1.08 μs
    1.7kV
    1700V
    104 ns
    3.4V @ 15V, 6A
    700 ns
    17nC
    36A
    20V
    5.5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2.3V
    -
    -
    -
    IXBH16N170 vs IXBH6N170
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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