IXYS IXBH14N250A

Name: IXBH14N250A
Brand: IXYS
SKU: 2496768-IXBH14N250A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXBH14N250A

Manufacturer:: IXYS

Ventron No:: 2496768-IXBH14N250A

Description:: IGBT 2500V TO247AD

ECAD Model:

Datasheet:: IXBH14N250A

Specifications

IXYS IXBH14N250A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBH14N250A.

Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Weight
6.500007g
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Collector Emitter Breakdown Voltage
2.5kV
Voltage - Collector Emitter Breakdown (Max)
2500V
RoHS Status
ROHS3 Compliant

Description

IXBH14N250A Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBH14N250A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBH14N250A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXBH14N250A More Descriptions

IGBT 2500V TO247AD

Product Comparison

The three parts on the right have similar specifications to IXBH14N250A.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Weight

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Input Type

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

RoHS Status

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

Pbfree Code

Number of Terminations

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

JESD-609 Code

Terminal Finish

Additional Feature

Radiation Hardening

Lead Free

View Compare
IXBH14N250A

IXYS

14 Weeks

Through Hole

Through Hole

TO-247-3

6.500007g

Tube

Active

1 (Unlimited)

Standard

2.5kV

2500V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXBH42N170A

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

6.500007g

Tube

Active

1 (Unlimited)

Standard

1.7kV

1700V

ROHS3 Compliant

3

SILICON

-55°C~150°C TJ

BIMOSFET™

2010

yes

3

Insulated Gate BIP Transistors

357W

NOT SPECIFIED

NOT SPECIFIED

IXB*42N170

3

Not Qualified

1

Single

COLLECTOR

357W

MOTOR CONTROL

N-CHANNEL

1.7kV

42A

330 ns

TO-247AD

5.2V

63 ns

850V, 21A, 1 Ω, 15V

6V @ 15V, 21A

420 ns

188nC

265A

19ns/200ns

3.43mJ (on), 430μJ (off)

20V

5.5V

-

-

-

-

-

IXBH14N250A vs IXBH42N170A
IXBH28N170A

IXYS

18 Weeks

Through Hole

Through Hole

TO-247-3

-

Tube

Active

1 (Unlimited)

Standard

1.7kV

1700V

ROHS3 Compliant

3

SILICON

-55°C~150°C TJ

BIMOSFET™

2005

yes

3

-

300W

NOT SPECIFIED

NOT SPECIFIED

-

3

Not Qualified

1

Single

COLLECTOR

300W

POWER CONTROL

N-CHANNEL

6V

30A

360 ns

TO-247AD

4.7V

-

850V, 14A, 10 Ω, 15V

6V @ 15V, 14A

-

105nC

60A

35ns/265ns

1.2mJ (off)

-

-

-

-

-

-

-

IXBH14N250A vs IXBH28N170A
IXBH6N170

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

6.500007g

Tube

Active

1 (Unlimited)

Standard

1.7kV

1700V

ROHS3 Compliant

3

SILICON

-55°C~150°C TJ

BIMOSFET™

2008

yes

3

Insulated Gate BIP Transistors

75W

-

-

-

3

-

1

Single

COLLECTOR

75W

POWER CONTROL

N-CHANNEL

1.7kV

12A

1.08 μs

-

2.3V

104 ns

-

3.4V @ 15V, 6A

700 ns

17nC

36A

-

-

20V

5.5V

e1

Tin/Silver/Copper (Sn/Ag/Cu)

LOW CONDUCTION LOSS

No

Lead Free

IXBH14N250A vs IXBH6N170