IXYS IXBF40N160

Name: IXBF40N160
Brand: IXYS
SKU: 3554892-IXBF40N160
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXBF40N160

Manufacturer:: IXYS

Ventron No:: 3554892-IXBF40N160

Description:: IGBT 1600V 28A 250W I4PAC

ECAD Model:

Datasheet:: IXBF40N160

Specifications

IXYS IXBF40N160 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBF40N160.

Factory Lead Time
32 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
i4-Pac™-5 (3 Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
BIMOSFET™
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
HIGH RELIABILITY, FAST SWITCHING
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
250W
Case Connection
ISOLATED
Input Type
Standard
Turn On Delay Time
200 ns
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
300 ns
Collector Emitter Voltage (VCEO)
1.6kV
Max Collector Current
28A
Collector Emitter Breakdown Voltage
1.6kV
Voltage - Collector Emitter Breakdown (Max)
1600V
Collector Emitter Saturation Voltage
6.2V
Turn On Time
260 ns
Test Condition
960V, 25A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
7.1V @ 15V, 20A
Turn Off Time-Nom (toff)
340 ns
Gate Charge
130nC
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
8V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXBF40N160 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBF40N160 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBF40N160. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXBF40N160 More Descriptions

IXBF40N160 Series 1600 V 28 A High Voltage BIMOSFETT - ISOPLUS i4-PACTM
Trans IGBT Chip N-CH 1.6KV 28A 3-Pin ISOPLUS I4-PAC
IGBT 1600V 28A 250W I4PAC
OEMs, CMs ONLY (NO BROKERS)
Contact for details

Product Comparison

The three parts on the right have similar specifications to IXBF40N160.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Lead Free

Power - Max

Reverse Recovery Time

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Terminal Position

JESD-30 Code

Configuration

View Compare
IXBF40N160

IXYS

32 Weeks

Through Hole

Through Hole

i4-Pac™-5 (3 Leads)

3

SILICON

-55°C~150°C TJ

Tube

BIMOSFET™

2006

e1

yes

Active

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

HIGH RELIABILITY, FAST SWITCHING

Insulated Gate BIP Transistors

250W

NOT SPECIFIED

NOT SPECIFIED

3

Not Qualified

1

Single

250W

ISOLATED

Standard

200 ns

POWER CONTROL

N-CHANNEL

300 ns

1.6kV

28A

1.6kV

1600V

6.2V

260 ns

960V, 25A, 22 Ω, 15V

7.1V @ 15V, 20A

340 ns

130nC

20V

8V

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
IXBF10N300C

IXYS

26 Weeks

Through Hole

Through Hole

i4-Pac™-5 (3 Leads)

-

-

-55°C~150°C TJ

Tube

BIMOSFET™

2008

-

-

Active

1 (Unlimited)

-

-

-

-

240W

-

-

-

-

-

-

-

-

Standard

-

-

-

-

6V

29A

3kV

3000V

-

-

1500V, 10A, 10 Ω, 15V

6V @ 15V, 10A

-

208nC

-

-

ROHS3 Compliant

-

240W

700 ns

240A

32ns/390ns

7.2mJ (on), 1.04mJ (off)

-

-

-

IXBF40N160 vs IXBF10N300C
IXBF15N300C

IXYS

26 Weeks

Through Hole

Through Hole

i4-Pac™-5 (3 Leads)

-

-

-55°C~150°C TJ

Tube

BIMOSFET™

2013

-

-

Active

1 (Unlimited)

-

-

-

-

300W

-

-

-

-

-

-

-

-

Standard

-

-

-

-

6V

37A

3kV

3000V

-

-

1500V, 15A, 10 Ω, 15V

6V @ 15V, 15A

-

267nC

-

-

ROHS3 Compliant

-

300W

706 ns

300A

40ns/455ns

9.15mJ (on), 1.4mJ (off)

-

-

-

IXBF40N160 vs IXBF15N300C
IXBF42N300

IXYS

30 Weeks

Through Hole

Through Hole

i4-Pac™-4, Isolated

-

SILICON

-55°C~150°C TJ

Tube

BIMOSFET™

2011

-

-

Active

1 (Unlimited)

3

-

-

Insulated Gate BIP Transistors

240W

-

-

3

Not Qualified

1

-

-

-

Standard

-

POWER CONTROL

N-CHANNEL

-

3V

60A

3kV

3000V

-

652 ns

1500V, 42A, 20 Ω, 15V

3V @ 15V, 42A

950 ns

200nC

25V

5V

ROHS3 Compliant

-

240W

1.7 μs

380A

72ns/445ns

-

SINGLE

R-PSIP-T3

SINGLE WITH BUILT-IN DIODE

IXBF40N160 vs IXBF42N300