Vishay Siliconix IRLL110TR
- Part Number:
- IRLL110TR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491746-IRLL110TR
- Description:
- MOSFET N-CH 100V 1.5A SOT223
- Datasheet:
- IRLL110TR
Vishay Siliconix IRLL110TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLL110TR.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight250.212891mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating1.5A
- Pin Count4
- Number of Channels1
- Power Dissipation-Max2W Ta 3.1W Tc
- Power Dissipation2W
- Turn On Delay Time9.3 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs540m Ω @ 900mA, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.5A Tc
- Gate Charge (Qg) (Max) @ Vgs6.1nC @ 5V
- Rise Time47ns
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)1.5A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage100V
- Height1.45mm
- Length6.7mm
- Width3.7mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRLL110TR Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.5A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
IRLL110TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
IRLL110TR Applications
There are a lot of Vishay Siliconix
IRLL110TR applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.5A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
IRLL110TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
IRLL110TR Applications
There are a lot of Vishay Siliconix
IRLL110TR applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRLL110TR More Descriptions
Trans MOSFET N-CH 100V 1.5A 4-Pin (3 Tab) SOT-223 T/R
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
French Electronic Distributor since 1988
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRLL110TR.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - Rated DCTechnologyCurrent RatingPin CountNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageResistanceMax Operating TemperatureMin Operating TemperatureElement ConfigurationThreshold VoltageDual Supply VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsREACH SVHCRadiation HardeningView Compare
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IRLL110TRSurface MountSurface MountTO-261-4, TO-261AA4250.212891mg-55°C~150°C TJTape & Reel (TR)2017noObsolete1 (Unlimited)EAR99100VMOSFET (Metal Oxide)1.5A412W Ta 3.1W Tc2W9.3 nsN-Channel540m Ω @ 900mA, 5V2V @ 250μA250pF @ 25V1.5A Tc6.1nC @ 5V47ns4V 5V±10V18 ns16 ns1.5A10V100V1.45mm6.7mm3.7mmNon-RoHS CompliantContains Lead---------------------------------------
-
-Surface MountTO-261-4, TO-261AA---55°C~150°C TJTape & Reel (TR)1999-Obsolete1 (Unlimited)EAR99-MOSFET (Metal Oxide)---1W Ta--N-Channel140m Ω @ 2A, 10V2V @ 250μA230pF @ 25V2A Ta14nC @ 10V-4V 10V±16V--------Non-RoHS Compliant-YESSILICONHEXFET®e34Matte Tin (Sn)HIGH RELIABILITYDUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G4Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING55V2A0.14Ohm16A55V32 mJ--------------
-
-Surface MountTO-261-4, TO-261AA---55°C~150°C TJTape & Reel (TR)1999-Obsolete1 (Unlimited)EAR99-MOSFET (Metal Oxide)---1W Ta--N-Channel45m Ω @ 3.9A, 10V2.4V @ 250μA530pF @ 25V3.9A Ta14nC @ 5V-4V 10V±16V--------Non-RoHS Compliant-YESSILICONHEXFET®e34Matte Tin (Sn)HIGH RELIABILITY, AVALANCHE RATEDDUALGULL WING26030R-PDSO-G4Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING30V3.9A0.045Ohm16A30V180 mJ--------------
-
Surface MountSurface MountTO-261-4, TO-261AA3--55°C~150°C TJTube2004-Discontinued1 (Unlimited)-30VMOSFET (Metal Oxide)3.9A--1W Ta2.1W7.4 nsN-Channel45mOhm @ 3.9A, 10V2.4V @ 250μA530pF @ 25V3.9A Ta14nC @ 5V24ns4V 10V±16V14 ns6.9 ns3.9A16V30V1.7mm6.7mm3.7mmROHS3 CompliantLead Free--HEXFET®----------1----30V-----SOT-22360mOhm150°C-55°CSingle2.4V30V530pF63 ns70mOhm45 mΩ2.4 VNo SVHCNo
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