IRLL110TR

Vishay Siliconix IRLL110TR

Part Number:
IRLL110TR
Manufacturer:
Vishay Siliconix
Ventron No:
2491746-IRLL110TR
Description:
MOSFET N-CH 100V 1.5A SOT223
ECAD Model:
Datasheet:
IRLL110TR

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Specifications
Vishay Siliconix IRLL110TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLL110TR.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    250.212891mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2017
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    1.5A
  • Pin Count
    4
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Ta 3.1W Tc
  • Power Dissipation
    2W
  • Turn On Delay Time
    9.3 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    540m Ω @ 900mA, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    250pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    6.1nC @ 5V
  • Rise Time
    47ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    18 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    1.5A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    100V
  • Height
    1.45mm
  • Length
    6.7mm
  • Width
    3.7mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRLL110TR Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.5A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).

IRLL110TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns


IRLL110TR Applications
There are a lot of Vishay Siliconix
IRLL110TR applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRLL110TR More Descriptions
Trans MOSFET N-CH 100V 1.5A 4-Pin (3 Tab) SOT-223 T/R
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRLL110TR.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Voltage - Rated DC
    Technology
    Current Rating
    Pin Count
    Number of Channels
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Threshold Voltage
    Dual Supply Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    View Compare
  • IRLL110TR
    IRLL110TR
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    250.212891mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2017
    no
    Obsolete
    1 (Unlimited)
    EAR99
    100V
    MOSFET (Metal Oxide)
    1.5A
    4
    1
    2W Ta 3.1W Tc
    2W
    9.3 ns
    N-Channel
    540m Ω @ 900mA, 5V
    2V @ 250μA
    250pF @ 25V
    1.5A Tc
    6.1nC @ 5V
    47ns
    4V 5V
    ±10V
    18 ns
    16 ns
    1.5A
    10V
    100V
    1.45mm
    6.7mm
    3.7mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLL014NTR
    -
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    1999
    -
    Obsolete
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1W Ta
    -
    -
    N-Channel
    140m Ω @ 2A, 10V
    2V @ 250μA
    230pF @ 25V
    2A Ta
    14nC @ 10V
    -
    4V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    e3
    4
    Matte Tin (Sn)
    HIGH RELIABILITY
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G4
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    55V
    2A
    0.14Ohm
    16A
    55V
    32 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLL2703TR
    -
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    1999
    -
    Obsolete
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1W Ta
    -
    -
    N-Channel
    45m Ω @ 3.9A, 10V
    2.4V @ 250μA
    530pF @ 25V
    3.9A Ta
    14nC @ 5V
    -
    4V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    e3
    4
    Matte Tin (Sn)
    HIGH RELIABILITY, AVALANCHE RATED
    DUAL
    GULL WING
    260
    30
    R-PDSO-G4
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    30V
    3.9A
    0.045Ohm
    16A
    30V
    180 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLL2703PBF
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    3
    -
    -55°C~150°C TJ
    Tube
    2004
    -
    Discontinued
    1 (Unlimited)
    -
    30V
    MOSFET (Metal Oxide)
    3.9A
    -
    -
    1W Ta
    2.1W
    7.4 ns
    N-Channel
    45mOhm @ 3.9A, 10V
    2.4V @ 250μA
    530pF @ 25V
    3.9A Ta
    14nC @ 5V
    24ns
    4V 10V
    ±16V
    14 ns
    6.9 ns
    3.9A
    16V
    30V
    1.7mm
    6.7mm
    3.7mm
    ROHS3 Compliant
    Lead Free
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    -
    30V
    -
    -
    -
    -
    -
    SOT-223
    60mOhm
    150°C
    -55°C
    Single
    2.4V
    30V
    530pF
    63 ns
    70mOhm
    45 mΩ
    2.4 V
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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