Infineon Technologies IRLL014NPBF

Name: IRLL014NPBF
Brand: Infineon Technologies
SKU: 2487379-IRLL014NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLL014NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2487379-IRLL014NPBF

Description:: MOSFET N-CH 55V 2A SOT223

ECAD Model:

Datasheet:: IRLL014NPBF

Specifications

Infineon Technologies IRLL014NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLL014NPBF.

Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
1999
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED, FAST SWITCHING
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
140m Ω @ 2A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
230pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Drain Current-Max (Abs) (ID)
2.8A
Drain-source On Resistance-Max
0.14Ohm
Pulsed Drain Current-Max (IDM)
16A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
32 mJ
RoHS Status
ROHS3 Compliant

Description

IRLL014NPBF Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

IRLL014NPBF Features Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free

IRLL014NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS /-16V
Single N-Channel 55 V 0.28 Ohm 14 nC HEXFET® Power Mosfet - SOT-223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHSInfineon SCT
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W
Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223 Tube
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:2A; On Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
MOSFET, N, 55V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:55V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:16A; SMD Marking:LL014N; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Product Comparison

The three parts on the right have similar specifications to IRLL014NPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Weight

Voltage - Rated DC

Current Rating

Pin Count

Number of Channels

Voltage

Current

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Height

Length

Width

Lead Free

Factory Lead Time

Resistance

Element Configuration

Forward Voltage

Drain to Source Breakdown Voltage

Radiation Hardening

View Compare
IRLL014NPBF

Infineon Technologies

Surface Mount

TO-261-4, TO-261AA

YES

SILICON

-55°C~150°C TJ

Tube

HEXFET®

1999

e3

Discontinued

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

AVALANCHE RATED, FAST SWITCHING

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

not_compliant

30

R-PDSO-G4

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

1W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

140m Ω @ 2A, 10V

2V @ 250μA

230pF @ 25V

2A Ta

14nC @ 10V

55V

4V 10V

±16V

2.8A

0.14Ohm

16A

55V

32 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLL1503TR

Vishay Siliconix

Surface Mount

TO-261-4, TO-261AA

-

-

-

Tape & Reel (TR)

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

-

-

-

-

-

30V

-

-

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRLL014NPBF vs IRLL1503TR
IRLL014TR

Vishay Siliconix

Surface Mount

TO-261-4, TO-261AA

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2012

e0

Obsolete

1 (Unlimited)

3

EAR99

TIN LEAD

LOGIC LEVEL COMPATIBLE

-

MOSFET (Metal Oxide)

DUAL

GULL WING

240

-

30

R-PDSO-G3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2W Ta 3.1W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

200m Ω @ 1.6A, 5V

2V @ 250μA

400pF @ 25V

2.7A Tc

8.4nC @ 5V

-

4V 5V

±10V

-

0.2Ohm

-

-

-

Non-RoHS Compliant

Surface Mount

4

250.212891mg

60V

2.7A

4

1

55V

2A

2W

9.3 ns

110ns

26 ns

17 ns

2.7A

10V

1.8mm

6.7mm

3.7mm

Contains Lead

-

-

-

-

-

-

IRLL014NPBF vs IRLL014TR
IRLL2703TRPBF

Infineon Technologies

Surface Mount

TO-261-4, TO-261AA

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1999

e3

Not For New Designs

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

HIGH RELIABILITY, AVALANCHE RATED

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

30

R-PDSO-G4

-

1

-

1W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

45m Ω @ 3.9A, 10V

2.4V @ 250μA

530pF @ 25V

3.9A Ta

14nC @ 5V

-

4V 10V

±16V

-

-

16A

-

180 mJ

ROHS3 Compliant

Surface Mount

3

-

30V

3.9A

-

-

-

-

2.1W

7.4 ns

24ns

14 ns

6.9 ns

3.9A

16V

1.4478mm

6.6802mm

3.7mm

Contains Lead

14 Weeks

60mOhm

Single

1V

30V

No

IRLL014NPBF vs IRLL2703TRPBF

Certification

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IRLL014NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223	4329	1 $0.4749 10 $0.4055 100 $0.228 1000 $0.2103 2500 $0.2004 10000 $0.1802
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT223 RoHS: Compliant	19302	1 $0.78 10 $0.686 100 $0.5371 500 $0.4062 1000 $0.3314
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT223 RoHS: Compliant	19302	1 $0.78 10 $0.686 100 $0.5371 500 $0.4062 1000 $0.3314
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT223 RoHS: Compliant	17500	2500 $0.29453
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT223 RoHS: Compliant	0
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223	13814	3520 $0.1775 3522 $0.1765 7042 $0.1762
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223	4329	34 $0.4055 100 $0.228 1000 $0.2103
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 - RoHS: Compliant	84
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 (A RoHS: Compliant	10590	1 $0.3529 10 $0.3169 25 $0.3169 50 $0.3159 100 $0.2069 500 $0.2059 1000 $0.1929
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 2A, SOT-223, Transistor Po	125	1 $0.711 10 $0.596 100 $0.399 500 $0.364 1000 $0.328 5000 $0.283 10000 $0.274
IRLL014NPBF. DISTI #IRLL014NPBF.	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 2A, SOT-223, Transistor Po	0
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.14Ohm RoHS: Compliant	347	1 $0.49 10 $0.43 100 $0.38 500 $0.33 1000 $0.29
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	MOSFET 55V 1 N-CH HEXFET 140mOhms 9.5nC RoHS: Compliant	1730	1 $0.67 10 $0.555 100 $0.358 1000 $0.287
IRLL014NPBF DISTI #IRLL014NPBF	International Rectifier	RoHS: Not Compliant	1262	1 $0.24 25 $0.23 100 $0.22 500 $0.21 1000 $0.2
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	MOSFET N-CHANNEL 55V 2.8A SOT223, PK	2335	5 $0.518 25 $0.284 100 $0.22 250 $0.212 500 $0.206
IRLL014NPBF DISTI #IRLL014NPBF	International Rectifier		157
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	N-LogL 55V 2,8A 2,1W 0,14R SOT223 RoHS: Compliant	2880	80 $0.254 160 $0.194 320 $0.174 640 $0.1675
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	N-LogL 55V 2,8A 2,1W 0,14R SOT223 RoHS: Compliant	24050	50 $0.21 100 $0.17 500 $0.15 2500 $0.1445
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	MOSFET, N, 55V, 2A, SOT-223 RoHS: Compliant	754	5 $0.474 25 $0.284 100 $0.22 250 $0.212 500 $0.206
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223 RoHS: Compliant	11314	5 $1.28 25 $0.514 50 $0.467 100 $0.417 500 $0.342 1000 $0.314
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223 RoHS: Compliant	1868	10 $0.259 50 $0.161
IRLL014NPBF DISTI #IRLL014NPBF	Infineon Technologies AG	MOSFET, N, 55V, 2A, SOT-223 RoHS: Compliant	2929	1 $1.07 10 $0.878 100 $0.567 1000 $0.455 2500 $0.384 10000 $0.369

IRLL014~~(9)~~
IRLL01~~(9)~~
IRLL0~~(17)~~
IRLL~~(41)~~
IRL~~(58)~~

Infineon Technologies IRLL014NPBF

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