Infineon Technologies IRLIZ44NPBF
- Part Number:
- IRLIZ44NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586049-IRLIZ44NPBF
- Description:
- MOSFET N-CH 55V 30A TO220FP
- ECAD Model:
-
- Datasheet:
- IRLIZ44NPBF
Infineon Technologies IRLIZ44NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLIZ44NPBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance25mOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating30A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max45W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation38W
- Case ConnectionISOLATED
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs22m Ω @ 17A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs48nC @ 5V
- Rise Time84ns
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)30A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)16V
- Drain Current-Max (Abs) (ID)28A
- Drain to Source Breakdown Voltage55V
- Dual Supply Voltage55V
- Recovery Time120 ns
- Isolation Voltage2kV
- Nominal Vgs2 V
- Height9.8mm
- Length10.6172mm
- Width4.826mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRLIZ44NPBF Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRLIZ44NPBF Features Logic –Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ? Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
IRLIZ44NPBF Features Logic –Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ? Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
IRLIZ44NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 30A;TO-220 Full-Pak;PD 45W;-55de
Single N-Channel 55 V 0.025 Ohm 48 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 30A 3-Pin(3 Tab) TO-220 Full-Pack
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 45 W
Power Field-Effect Transistor, 30A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, LOGIC, FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Single N-Channel 55 V 0.025 Ohm 48 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 30A 3-Pin(3 Tab) TO-220 Full-Pack
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 45 W
Power Field-Effect Transistor, 30A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, LOGIC, FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
The three parts on the right have similar specifications to IRLIZ44NPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeIsolation VoltageNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxSurface MountTerminal PositionJESD-30 CodeConfigurationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Radiation HardeningView Compare
-
IRLIZ44NPBF14 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~175°C TJTubeHEXFET®2004Not For New Designs1 (Unlimited)3EAR9925mOhmAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLEFET General Purpose Power55VMOSFET (Metal Oxide)NOT SPECIFIED30ANOT SPECIFIEDNot Qualified145W TcSingleENHANCEMENT MODE38WISOLATED11 nsN-ChannelSWITCHING22m Ω @ 17A, 10V2V @ 250μA1700pF @ 25V30A Tc48nC @ 5V84ns4V 10V±16V15 ns26 ns30A2VTO-220AB16V28A55V55V120 ns2kV2 V9.8mm10.6172mm4.826mmNo SVHCROHS3 CompliantContains Lead, Lead Free----------------- -
-Through HoleThrough HoleTO-220-3 Full Pack3--55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)--7MOhm--30VMOSFET (Metal Oxide)-61A--147W Tc--47W-15 nsN-Channel-7mOhm @ 37A, 10V1V @ 250μA3500pF @ 25V61A Tc110nC @ 4.5V210ns4.5V 10V±16V-29 ns61A1V-16V-30V30V-2kV1 V---No SVHCRoHS CompliantLead FreeTO-220AB Full-Pak175°C-55°C30V3.5nF7mOhm7 mΩ---------
-
--Through HoleTO-220-3 Full Pack-SILICON-55°C~175°C TJTubeHEXFET®1998Obsolete1 (Unlimited)3EAR99-AVALANCHE RATED--MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIEDNot Qualified163W Tc-ENHANCEMENT MODE-ISOLATED-N-ChannelSWITCHING26m Ω @ 16A, 10V2V @ 250μA3700pF @ 25V31A Tc140nC @ 5V-4V 10V±16V----TO-220AB-31A---------Non-RoHS Compliant----100V---NOSINGLER-PSFM-T3SINGLE WITH BUILT-IN DIODE0.03Ohm190A100V520 mJ-
-
-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3--55°C~150°C TJTube-2017Obsolete1 (Unlimited)-----200VMOSFET (Metal Oxide)-4.1A---30W TcSingle-30W-4.2 nsN-Channel-800mOhm @ 2.4A, 5V2V @ 250μA360pF @ 25V4A Tc16nC @ 10V31ns4V 5V±10V17 ns18 ns4A--10V-200V--------Non-RoHS CompliantContains LeadTO-220-3150°C-55°C200V360pF800mOhm800 mΩ--------No
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
23 October 2023
A Basic Overview of SN74LS00N NAND Gates
Ⅰ. What are logic gates and NAND gates?Ⅱ. Overview of SN74LS00N NAND gatesⅢ. Symbol and footprint of SN74LS00N NAND gatesⅣ. Technical parameters of SN74LS00N NAND gatesⅤ. Features of... -
24 October 2023
2N5486 Transistor: Equivalent, Technical Parameters and Applications
Ⅰ. Overview of 2N5486 transistorⅡ. Symbol, footprint and pin configuration of 2N5486 transistorⅢ. Technical parameters of 2N5486 transistorⅣ. What are the features of 2N5486 transistor?Ⅴ. How to drive or use 2N5486... -
25 October 2023
UC3842AN Controller: Symbol, Features, Layout Guidelines and More Details
Ⅰ. What is UC3842AN controller?Ⅱ. Symbol, footprint and pin configuration of UC3842AN controllerⅢ. Technical parameters of UC3842AN controllerⅣ. Features of UC3842AN controllerⅤ. Layout guidelines for UC3842AN controllerⅥ. Absolute... -
25 October 2023
What Is MB10S Bridge Rectifier?
Ⅰ. What is a bridge rectifier?Ⅱ. Overview of MB10S bridge rectifierⅢ. Symbol, footprint and pin configuration of MB10S bridge rectifierⅣ. Technical parameters of MB10S bridge rectifierⅤ. Features of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.