Infineon Technologies IRLI520NPBF
- Part Number:
- IRLI520NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813609-IRLI520NPBF
- Description:
- MOSFET N-CH 100V 8.1A TO220FP
- Datasheet:
- IRLI520NPBF
Infineon Technologies IRLI520NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLI520NPBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance180MOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating8.1A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max30W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation27W
- Case ConnectionISOLATED
- Turn On Delay Time40 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs180m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8.1A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Rise Time35ns
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- Fall Time (Typ)22 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)8.1A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Avalanche Energy Rating (Eas)85 mJ
- Isolation Voltage2kV
- Nominal Vgs2 V
- Height9.8mm
- Length10.6172mm
- Width4.826mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLI520NPBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 85 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 440pF @ 25V.This device conducts a continuous drain current (ID) of 8.1A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
IRLI520NPBF Features
the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 8.1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 23 ns
a threshold voltage of 2V
IRLI520NPBF Applications
There are a lot of Infineon Technologies
IRLI520NPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 85 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 440pF @ 25V.This device conducts a continuous drain current (ID) of 8.1A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
IRLI520NPBF Features
the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 8.1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 23 ns
a threshold voltage of 2V
IRLI520NPBF Applications
There are a lot of Infineon Technologies
IRLI520NPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRLI520NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 8.1A;TO-220 Full-Pak;PD 30W
Single N-Channel 100 V 180 mOhm 13.3 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 8.1A 3-Pin(3 Tab) TO-220FP Tube
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 100V, 7.7A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:27W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction to Case Thermal Resistance A:5°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:27W; Power Dissipation Pd:27W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Single N-Channel 100 V 180 mOhm 13.3 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 8.1A 3-Pin(3 Tab) TO-220FP Tube
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 100V, 7.7A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:27W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction to Case Thermal Resistance A:5°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:27W; Power Dissipation Pd:27W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
The three parts on the right have similar specifications to IRLI520NPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Isolation VoltageNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTerminal PositionJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsInput CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningPbfree CodeReach Compliance CodePin CountView Compare
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IRLI520NPBF14 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~175°C TJTubeHEXFET®2004e3Not For New Designs1 (Unlimited)3EAR99180MOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED100VMOSFET (Metal Oxide)NOT SPECIFIED8.1ANOT SPECIFIEDNot Qualified130W TcSingleENHANCEMENT MODE27WISOLATED40 nsN-ChannelSWITCHING180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V8.1A Tc20nC @ 5V35ns4V 10V±16V22 ns23 ns8.1A2VTO-220AB16V100V100V85 mJ2kV2 V9.8mm10.6172mm4.826mmNo SVHCROHS3 CompliantLead Free----------------------
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--Through HoleTO-220-3 Full Pack-SILICON-55°C~175°C TJTubeHEXFET®1998-Obsolete1 (Unlimited)3EAR99--AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIEDNot Qualified163W Tc-ENHANCEMENT MODE-ISOLATED-N-ChannelSWITCHING26m Ω @ 16A, 10V2V @ 250μA3700pF @ 25V31A Tc140nC @ 5V-4V 10V±16V----TO-220AB---520 mJ------Non-RoHS Compliant-NOSINGLER-PSFM-T3SINGLE WITH BUILT-IN DIODE100V31A0.03Ohm190A100V------------
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-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab---55°C~150°C TJTube-2017-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-----40W TcSingle---8 nsN-Channel-180mOhm @ 5.9A, 5V2V @ 250μA1800pF @ 25V9.9A Tc66nC @ 10V83ns4V 5V±10V52 ns44 ns9.9A--10V-----9.8mm10.63mm4.83mm-Non-RoHS Compliant-----200V----TO-220-36.000006g150°C-55°C11.8nF180mOhm180 mΩNo---
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-SILICON-55°C~150°C TJTube---Obsolete1 (Unlimited)3--NOT SPECIFIED--MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIEDCOMMERCIAL13.1W Ta 33W Tc-ENHANCEMENT MODE---N-ChannelSWITCHING1.5 Ω @ 1.65A, 5V2V @ 250μA240pF @ 25V3.3A Tc9nC @ 5V-5V±20V--------29 mJ------ROHS3 Compliant-NOSINGLER-PSIP-T3SINGLE WITH BUILT-IN DIODE200V3.3A-12A200V---------yesunknown3
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