Infineon Technologies IRLI530NPBF

Name: IRLI530NPBF
Brand: Infineon Technologies
SKU: 2479693-IRLI530NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLI530NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479693-IRLI530NPBF

Description:: MOSFET N-CH 100V 12A TO220FP

ECAD Model:

Datasheet:: IRLI530NPBF

Specifications

Infineon Technologies IRLI530NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLI530NPBF.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
120mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
11A
Number of Elements
1
Power Dissipation-Max
41W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
33W
Case Connection
ISOLATED
Turn On Delay Time
7.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 5V
Rise Time
53ns
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
60A
Dual Supply Voltage
100V
Recovery Time
210 ns
Isolation Voltage
2kV
Nominal Vgs
2 V
Height
16.12mm
Length
10.6172mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRLI530NPBF Overview
A device's maximal input capacitance is 800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 60A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This device reduces its overall power consumption by using drive voltage (4V 10V).

IRLI530NPBF Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 60A.
a threshold voltage of 2V

IRLI530NPBF Applications
There are a lot of Infineon Technologies
IRLI530NPBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRLI530NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 12A;TO-220 Full-Pak;PD 41W;-55deg
Single N-Channel 100 V 0.12 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3FP
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220FP Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 41 W
Power Field-Effect Transistor, 12A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
N CH MOSFET, 100V, 12A, TO-220FP; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction to Case Thermal Resistance A:3.7°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:33W; Power Dissipation Pd:33W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Product Comparison

The three parts on the right have similar specifications to IRLI530NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Recovery Time

Isolation Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRLI530NPBF

Infineon Technologies

14 Weeks

Tin

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

Not For New Designs

1 (Unlimited)

3

EAR99

120mOhm

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

100V

MOSFET (Metal Oxide)

11A

1

41W Tc

Single

ENHANCEMENT MODE

33W

ISOLATED

7.2 ns

N-Channel

SWITCHING

100m Ω @ 9A, 10V

2V @ 250μA

800pF @ 25V

12A Tc

34nC @ 5V

53ns

4V 10V

±16V

26 ns

30 ns

12A

2V

TO-220AB

16V

100V

60A

100V

210 ns

2kV

2 V

16.12mm

10.6172mm

4.826mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLI620GPBF

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

-

-55°C~150°C TJ

Tube

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

1

30W Tc

Single

-

30W

-

4.2 ns

N-Channel

-

800mOhm @ 2.4A, 5V

2V @ 250μA

360pF @ 25V

4A Tc

16nC @ 10V

31ns

4V 5V

±10V

17 ns

18 ns

4A

2V

-

10V

200V

-

-

-

-

-

-

-

-

Unknown

No

ROHS3 Compliant

-

TO-220-3

150°C

-55°C

200V

360pF

800mOhm

800 mΩ

-

-

-

-

-

-

-

-

-

-

-

IRLI530NPBF vs IRLI620GPBF
IRLI520N

Infineon Technologies

-

-

-

Through Hole

TO-220-3 Full Pack

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

3

EAR99

-

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

-

-

MOSFET (Metal Oxide)

-

1

30W Tc

-

ENHANCEMENT MODE

-

ISOLATED

-

N-Channel

SWITCHING

180m Ω @ 6A, 10V

2V @ 250μA

440pF @ 25V

8.1A Tc

20nC @ 5V

-

4V 10V

±16V

-

-

-

-

TO-220AB

-

-

35A

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

100V

-

-

-

NO

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

8.1A

0.22Ohm

100V

85 mJ

IRLI530NPBF vs IRLI520N
IRLI2910

Infineon Technologies

-

-

-

Through Hole

TO-220-3 Full Pack

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

3

EAR99

-

AVALANCHE RATED

-

-

MOSFET (Metal Oxide)

-

1

63W Tc

-

ENHANCEMENT MODE

-

ISOLATED

-

N-Channel

SWITCHING

26m Ω @ 16A, 10V

2V @ 250μA

3700pF @ 25V

31A Tc

140nC @ 5V

-

4V 10V

±16V

-

-

-

-

TO-220AB

-

-

190A

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

100V

-

-

-

NO

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

31A

0.03Ohm

100V

520 mJ

IRLI530NPBF vs IRLI2910

Certification

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IRLI530NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220FP T RoHS: Compliant	1962	1 $0.9593 10 $0.8483 100 $0.6879 500 $0.6186 1000 $0.5064 2500 $0.4542
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	MOSFET N-CH 100V 12A TO220FP RoHS: Compliant	11272	1 $1.52 10 $1.359 100 $1.0891 500 $0.8607 1000 $0.69461
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220FP T RoHS: Compliant	1962	15 $0.8483 100 $0.6879 500 $0.6186 1000 $0.5064
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220FP T RoHS: Compliant	1410	24 $1.0176 100 $0.7795 500 $0.6893 1000 $0.5443 2500 $0.4829
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220FP T RoHS: Compliant	400	21 $1.1551 50 $1.0901 100 $0.89
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220FP ( RoHS: Compliant	100	1 $1.0579 10 $0.9119 25 $0.9089 50 $0.9069 100 $0.6939 500 $0.6139 1000 $0.4849
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220FP ( RoHS: Compliant	0
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220FP - RoHS: Compliant	0	2000 $0.4349 4000 $0.4189 8000 $0.4039 12000 $0.3899 20000 $0.3829
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	MOSFET Transistor, N Channel, 11 A, 100 V, 100 moh	17	1 $1.3 10 $1.12 100 $0.88 500 $0.789 1000 $0.642 2500 $0.58 10000 $0.562
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.1Ohm RoHS: Compliant	0	700 $1.65 1400 $1.617 3500 $1.568 7000 $1.502 17500 $1.403
IRLI530NPBF DISTI #IRLI530NPBF	International Rectifier	RoHS: Not Compliant	700	1 $0.62 25 $0.57 100 $0.55 500 $0.53 1000 $0.5
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	MOSFET MOSFT 100V 11A 100mOhm 22.7nC LogLv RoHS: Compliant	9344	1 $1.24 10 $1.06 100 $0.812 500 $0.718 1000 $0.567
IRLI530NPBF DISTI #IRLI530NPBF	International Rectifier		39
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 11A, 33W	24	1 $0.8611 3 $0.7814 10 $0.6527 50 $0.6143
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	N-LogL 100V 12A 41W 0,1R TO220-Fullpak RoHS: Compliant	180	10 $0.9625 50 $0.7625 200 $0.6625 500 $0.6385
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	MOSFET, N, 100V, 11A, TO-220FP RoHS: Compliant	5	5 $0.809 25 $0.714 100 $0.619 250 $0.584 500 $0.548
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 12A 3-Pin(3 Tab) TO-220FP T RoHS: Compliant	400	5 $0.971 10 $0.906 50 $0.855 100 $0.698
IRLI530NPBF DISTI #IRLI530NPBF	Infineon Technologies AG	MOSFET, N, 100V, 11A, TO-220FP RoHS: Compliant	0	1 $1.97 10 $1.68 100 $1.29 500 $1.14 1000 $0.897 2500 $0.796

IRLI530~~(8)~~
IRLI53~~(8)~~
IRLI5~~(22)~~
IRLI~~(66)~~
IRL~~(58)~~

Infineon Technologies IRLI530NPBF

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