Vishay Siliconix IRLI520G
- Part Number:
- IRLI520G
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491658-IRLI520G
- Description:
- MOSFET N-CH 100V 7.2A TO220FP
- Datasheet:
- IRLI520G
Vishay Siliconix IRLI520G technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLI520G.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack, Isolated Tab
- Number of Pins3
- Supplier Device PackageTO-220-3
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Current Rating7.2A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max37W Tc
- Element ConfigurationSingle
- Power Dissipation37W
- Turn On Delay Time9.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270mOhm @ 4.3A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds490pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.2A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
- Rise Time64ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)27 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)7.2A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage100V
- Input Capacitance490pF
- Drain to Source Resistance270mOhm
- Rds On Max270 mΩ
- Height9.8mm
- Length10.63mm
- Width4.83mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRLI520G Overview
A device's maximum input capacitance is 490pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 270mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
IRLI520G Features
a continuous drain current (ID) of 7.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRLI520G Applications
There are a lot of Vishay Siliconix
IRLI520G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 490pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 270mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
IRLI520G Features
a continuous drain current (ID) of 7.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRLI520G Applications
There are a lot of Vishay Siliconix
IRLI520G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLI520G More Descriptions
Trans MOSFET N-CH 100V 7.2A 3-Pin(3 Tab) TO-220 Full-Pak
N CH MOSFET, 100V, 7.2A, TO-220FP
MOSFET N-CH 100V 7.2A TO220FP
MOSFET N-CH 100V 7.2A TO220-3
LOGIC MOSFET N-CHANNEL 100V
N CH MOSFET, 100V, 7.2A, TO-220FP
MOSFET N-CH 100V 7.2A TO220FP
MOSFET N-CH 100V 7.2A TO220-3
LOGIC MOSFET N-CHANNEL 100V
The three parts on the right have similar specifications to IRLI520G.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusFactory Lead TimeTransistor Element MaterialSeriesNumber of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageJEDEC-95 CodeDrain Current-Max (Abs) (ID)Dual Supply VoltageRecovery TimeIsolation VoltageNominal VgsREACH SVHCLead FreeSurface MountPbfree CodeTerminal FinishTerminal PositionReach Compliance CodePin CountJESD-30 CodeConfigurationPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRLI520GThrough HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~175°C TJTube2016Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)7.2A1137W TcSingle37W9.8 nsN-Channel270mOhm @ 4.3A, 5V2V @ 250μA490pF @ 25V7.2A Tc12nC @ 5V64ns100V4V 5V±10V27 ns21 ns7.2A10V100V490pF270mOhm270 mΩ9.8mm10.63mm4.83mmNoNon-RoHS Compliant------------------------------------
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Through HoleThrough HoleTO-220-3 Full Pack3---55°C~175°C TJTube2004Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)30A1-45W TcSingle38W11 nsN-Channel22m Ω @ 17A, 10V2V @ 250μA1700pF @ 25V30A Tc48nC @ 5V84ns-4V 10V±16V15 ns26 ns30A16V55V---9.8mm10.6172mm4.826mm-ROHS3 Compliant14 WeeksSILICONHEXFET®3EAR9925mOhmAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLEFET General Purpose Power55VNOT SPECIFIEDNOT SPECIFIEDNot QualifiedENHANCEMENT MODEISOLATEDSWITCHING2VTO-220AB28A55V120 ns2kV2 VNo SVHCContains Lead, Lead Free-----------
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Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab-TO-220-36.000006g-55°C~150°C TJTube2017Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)--140W TcSingle-8 nsN-Channel180mOhm @ 5.9A, 5V2V @ 250μA1800pF @ 25V9.9A Tc66nC @ 10V83ns200V4V 5V±10V52 ns44 ns9.9A10V-1.8nF180mOhm180 mΩ9.8mm10.63mm4.83mmNoNon-RoHS Compliant-----------------------------------
-
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA----55°C~150°C TJTube-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-1-3.1W Ta 33W Tc---N-Channel1.5 Ω @ 1.65A, 5V2V @ 250μA240pF @ 25V3.3A Tc9nC @ 5V-200V5V±20V------------ROHS3 Compliant-SILICON-3-----NOT SPECIFIEDNOT SPECIFIEDCOMMERCIALENHANCEMENT MODE-SWITCHING--3.3A------NOyesNOT SPECIFIEDSINGLEunknown3R-PSIP-T3SINGLE WITH BUILT-IN DIODE12A200V29 mJ
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