IRLI520G

Vishay Siliconix IRLI520G

Part Number:
IRLI520G
Manufacturer:
Vishay Siliconix
Ventron No:
2491658-IRLI520G
Description:
MOSFET N-CH 100V 7.2A TO220FP
ECAD Model:
Datasheet:
IRLI520G

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Specifications
Vishay Siliconix IRLI520G technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLI520G.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack, Isolated Tab
  • Number of Pins
    3
  • Supplier Device Package
    TO-220-3
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    7.2A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    37W Tc
  • Element Configuration
    Single
  • Power Dissipation
    37W
  • Turn On Delay Time
    9.8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    270mOhm @ 4.3A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    490pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 5V
  • Rise Time
    64ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    27 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    7.2A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    490pF
  • Drain to Source Resistance
    270mOhm
  • Rds On Max
    270 mΩ
  • Height
    9.8mm
  • Length
    10.63mm
  • Width
    4.83mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRLI520G Overview
A device's maximum input capacitance is 490pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 270mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.

IRLI520G Features
a continuous drain current (ID) of 7.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)


IRLI520G Applications
There are a lot of Vishay Siliconix
IRLI520G applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLI520G More Descriptions
Trans MOSFET N-CH 100V 7.2A 3-Pin(3 Tab) TO-220 Full-Pak
N CH MOSFET, 100V, 7.2A, TO-220FP
MOSFET N-CH 100V 7.2A TO220FP
MOSFET N-CH 100V 7.2A TO220-3
LOGIC MOSFET N-CHANNEL 100V
Product Comparison
The three parts on the right have similar specifications to IRLI520G.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Transistor Element Material
    Series
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Dual Supply Voltage
    Recovery Time
    Isolation Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    Surface Mount
    Pbfree Code
    Terminal Finish
    Terminal Position
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Configuration
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRLI520G
    IRLI520G
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    7.2A
    1
    1
    37W Tc
    Single
    37W
    9.8 ns
    N-Channel
    270mOhm @ 4.3A, 5V
    2V @ 250μA
    490pF @ 25V
    7.2A Tc
    12nC @ 5V
    64ns
    100V
    4V 5V
    ±10V
    27 ns
    21 ns
    7.2A
    10V
    100V
    490pF
    270mOhm
    270 mΩ
    9.8mm
    10.63mm
    4.83mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLIZ44NPBF
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2004
    Not For New Designs
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    30A
    1
    -
    45W Tc
    Single
    38W
    11 ns
    N-Channel
    22m Ω @ 17A, 10V
    2V @ 250μA
    1700pF @ 25V
    30A Tc
    48nC @ 5V
    84ns
    -
    4V 10V
    ±16V
    15 ns
    26 ns
    30A
    16V
    55V
    -
    -
    -
    9.8mm
    10.6172mm
    4.826mm
    -
    ROHS3 Compliant
    14 Weeks
    SILICON
    HEXFET®
    3
    EAR99
    25mOhm
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    55V
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    2V
    TO-220AB
    28A
    55V
    120 ns
    2kV
    2 V
    No SVHC
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLI640G
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    -
    TO-220-3
    6.000006g
    -55°C~150°C TJ
    Tube
    2017
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    -
    -
    1
    40W Tc
    Single
    -
    8 ns
    N-Channel
    180mOhm @ 5.9A, 5V
    2V @ 250μA
    1800pF @ 25V
    9.9A Tc
    66nC @ 10V
    83ns
    200V
    4V 5V
    ±10V
    52 ns
    44 ns
    9.9A
    10V
    -
    1.8nF
    180mOhm
    180 mΩ
    9.8mm
    10.63mm
    4.83mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLI610ATU
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -
    -55°C~150°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    3.1W Ta 33W Tc
    -
    -
    -
    N-Channel
    1.5 Ω @ 1.65A, 5V
    2V @ 250μA
    240pF @ 25V
    3.3A Tc
    9nC @ 5V
    -
    200V
    5V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SILICON
    -
    3
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    COMMERCIAL
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    -
    3.3A
    -
    -
    -
    -
    -
    -
    NO
    yes
    NOT SPECIFIED
    SINGLE
    unknown
    3
    R-PSIP-T3
    SINGLE WITH BUILT-IN DIODE
    12A
    200V
    29 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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