IRLI2910PBF

Infineon Technologies IRLI2910PBF

Part Number:
IRLI2910PBF
Manufacturer:
Infineon Technologies
Ventron No:
2484919-IRLI2910PBF
Description:
MOSFET N-CH 100V 31A TO220FP
ECAD Model:
Datasheet:
IRLI2910PBF

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Specifications
Infineon Technologies IRLI2910PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLI2910PBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    30mOhm
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    27A
  • Number of Elements
    1
  • Power Dissipation-Max
    63W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    63W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    26m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    31A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    140nC @ 5V
  • Rise Time
    100ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    55 ns
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    31A
  • Threshold Voltage
    2V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    100V
  • Dual Supply Voltage
    100V
  • Avalanche Energy Rating (Eas)
    520 mJ
  • Isolation Voltage
    2.5kV
  • Nominal Vgs
    2 V
  • Height
    9.8044mm
  • Length
    10.6172mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLI2910PBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 520 mJ.A device's maximum input capacitance is 3700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 31A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2V.This device uses no drive voltage (4V 10V) to reduce its overall power consumption.

IRLI2910PBF Features
the avalanche energy rating (Eas) is 520 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2V


IRLI2910PBF Applications
There are a lot of Infineon Technologies
IRLI2910PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
Product Comparison
The three parts on the right have similar specifications to IRLI2910PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Isolation Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • IRLI2910PBF
    IRLI2910PBF
    14 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    30mOhm
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    27A
    1
    63W Tc
    Single
    ENHANCEMENT MODE
    63W
    ISOLATED
    11 ns
    N-Channel
    SWITCHING
    26m Ω @ 16A, 10V
    2V @ 250μA
    3700pF @ 25V
    31A Tc
    140nC @ 5V
    100ns
    4V 10V
    ±16V
    55 ns
    11 ns
    31A
    2V
    TO-220AB
    16V
    100V
    100V
    520 mJ
    2.5kV
    2 V
    9.8044mm
    10.6172mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLI620GPBF
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    30W Tc
    Single
    -
    30W
    -
    4.2 ns
    N-Channel
    -
    800mOhm @ 2.4A, 5V
    2V @ 250μA
    360pF @ 25V
    4A Tc
    16nC @ 10V
    31ns
    4V 5V
    ±10V
    17 ns
    18 ns
    4A
    2V
    -
    10V
    200V
    -
    -
    -
    -
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    -
    TO-220-3
    150°C
    -55°C
    200V
    360pF
    800mOhm
    800 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLI2910
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    AVALANCHE RATED
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    63W Tc
    -
    ENHANCEMENT MODE
    -
    ISOLATED
    -
    N-Channel
    SWITCHING
    26m Ω @ 16A, 10V
    2V @ 250μA
    3700pF @ 25V
    31A Tc
    140nC @ 5V
    -
    4V 10V
    ±16V
    -
    -
    -
    -
    TO-220AB
    -
    -
    -
    520 mJ
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    100V
    -
    -
    -
    NO
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    31A
    0.03Ohm
    190A
    100V
  • IRLI620G
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2017
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    200V
    MOSFET (Metal Oxide)
    4.1A
    -
    30W Tc
    Single
    -
    30W
    -
    4.2 ns
    N-Channel
    -
    800mOhm @ 2.4A, 5V
    2V @ 250μA
    360pF @ 25V
    4A Tc
    16nC @ 10V
    31ns
    4V 5V
    ±10V
    17 ns
    18 ns
    4A
    -
    -
    10V
    200V
    -
    -
    -
    -
    -
    -
    -
    -
    No
    Non-RoHS Compliant
    Contains Lead
    TO-220-3
    150°C
    -55°C
    200V
    360pF
    800mOhm
    800 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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