Infineon Technologies IRLI2910PBF
- Part Number:
- IRLI2910PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484919-IRLI2910PBF
- Description:
- MOSFET N-CH 100V 31A TO220FP
- Datasheet:
- IRLI2910PBF
Infineon Technologies IRLI2910PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLI2910PBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance30mOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating27A
- Number of Elements1
- Power Dissipation-Max63W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation63W
- Case ConnectionISOLATED
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs26m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C31A Tc
- Gate Charge (Qg) (Max) @ Vgs140nC @ 5V
- Rise Time100ns
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- Fall Time (Typ)55 ns
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)31A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Avalanche Energy Rating (Eas)520 mJ
- Isolation Voltage2.5kV
- Nominal Vgs2 V
- Height9.8044mm
- Length10.6172mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLI2910PBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 520 mJ.A device's maximum input capacitance is 3700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 31A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2V.This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
IRLI2910PBF Features
the avalanche energy rating (Eas) is 520 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2V
IRLI2910PBF Applications
There are a lot of Infineon Technologies
IRLI2910PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 520 mJ.A device's maximum input capacitance is 3700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 31A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2V.This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
IRLI2910PBF Features
the avalanche energy rating (Eas) is 520 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2V
IRLI2910PBF Applications
There are a lot of Infineon Technologies
IRLI2910PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
The three parts on the right have similar specifications to IRLI2910PBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Isolation VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxSurface MountTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
-
IRLI2910PBF14 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~175°C TJTubeHEXFET®2004Not For New Designs1 (Unlimited)3EAR9930mOhmAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLEFET General Purpose Power100VMOSFET (Metal Oxide)27A163W TcSingleENHANCEMENT MODE63WISOLATED11 nsN-ChannelSWITCHING26m Ω @ 16A, 10V2V @ 250μA3700pF @ 25V31A Tc140nC @ 5V100ns4V 10V±16V55 ns11 ns31A2VTO-220AB16V100V100V520 mJ2.5kV2 V9.8044mm10.6172mm4.826mmNo SVHCNoROHS3 CompliantLead Free-------------------
-
-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3--55°C~150°C TJTube-2016Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-130W TcSingle-30W-4.2 nsN-Channel-800mOhm @ 2.4A, 5V2V @ 250μA360pF @ 25V4A Tc16nC @ 10V31ns4V 5V±10V17 ns18 ns4A2V-10V200V-------UnknownNoROHS3 Compliant-TO-220-3150°C-55°C200V360pF800mOhm800 mΩ-----------
-
--Through HoleTO-220-3 Full Pack-SILICON-55°C~175°C TJTubeHEXFET®1998Obsolete1 (Unlimited)3EAR99-AVALANCHE RATED--MOSFET (Metal Oxide)-163W Tc-ENHANCEMENT MODE-ISOLATED-N-ChannelSWITCHING26m Ω @ 16A, 10V2V @ 250μA3700pF @ 25V31A Tc140nC @ 5V-4V 10V±16V----TO-220AB---520 mJ-------Non-RoHS Compliant----100V---NOSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODE31A0.03Ohm190A100V
-
-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3--55°C~150°C TJTube-2017Obsolete1 (Unlimited)-----200VMOSFET (Metal Oxide)4.1A-30W TcSingle-30W-4.2 nsN-Channel-800mOhm @ 2.4A, 5V2V @ 250μA360pF @ 25V4A Tc16nC @ 10V31ns4V 5V±10V17 ns18 ns4A--10V200V--------NoNon-RoHS CompliantContains LeadTO-220-3150°C-55°C200V360pF800mOhm800 mΩ-----------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
16 January 2024
AD9361BBCZ RF Transceiver Manufacturer, Characteristics, Applications and Package
Ⅰ. Overview of AD9361BBCZⅡ. Who produced AD9361BBCZ?Ⅲ. Technical parameters of AD9361BBCZⅣ. What are the characteristics of AD9361BBCZ?Ⅴ. Market trend of AD9361BBCZⅥ. Where is AD9361BBCZ used?Ⅶ. How to use... -
16 January 2024
PDIUSBD12 Structure, Pin Configuration, Characteristics and Applications
Ⅰ. Overview of PDIUSBD12Ⅱ. Design of PDIUSBD12Ⅲ. Internal structure of PDIUSBD12Ⅳ. Pin configuration of PDIUSBD12Ⅴ. What are the characteristics of PDIUSBD12?Ⅵ. PDIUSBD12 instructionsⅦ. What are the applications of... -
17 January 2024
MCF5282CVM66 Microcontroller Replacements, Structure, Working Principle and Other Details
Ⅰ. MCF5282CVM66 overviewⅡ. Structure and working principle of MCF5282CVM66Ⅲ. Specifications of MCF5282CVM66Ⅳ. What are the advantages and disadvantages of MCF5282CVM66?Ⅴ. Purpose of MCF5282CVM66Ⅵ. Market trend of MCF5282CVM66Ⅶ. Precautions... -
17 January 2024
DS18B20 Digital Temperature Sensor Structure, Features, Applications and More
Ⅰ. What is DS18B20?Ⅱ. Internal structure of DS18B20Ⅲ. Features of DS18B20 sensorⅣ. How does DS18B20 work?Ⅴ. Symbol, footprint and pin configuration of DS18B20Ⅵ. Driving principle of DS18B20Ⅶ. Where...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.