Infineon Technologies IRL5602STRLPBF
- Part Number:
- IRL5602STRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493181-IRL5602STRLPBF
- Description:
- MOSFET P-CH 20V 24A D2PAK
- Datasheet:
- IRL5602STRLPBF
Infineon Technologies IRL5602STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL5602STRLPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1999
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- Resistance62mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max75W Tc
- Element ConfigurationSingle
- Power Dissipation75W
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs42mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1460pF @ 15V
- Current - Continuous Drain (Id) @ 25°C24A Tc
- Gate Charge (Qg) (Max) @ Vgs44nC @ 4.5V
- Rise Time73ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)84 ns
- Turn-Off Delay Time53 ns
- Continuous Drain Current (ID)-24A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Dual Supply Voltage20V
- Input Capacitance1.46nF
- Drain to Source Resistance42mOhm
- Rds On Max42 mΩ
- Nominal Vgs1 V
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRL5602STRLPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1460pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -24A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.This device has a drain-to-source resistance of 42mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
IRL5602STRLPBF Features
a continuous drain current (ID) of -24A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 42mOhm
a 20V drain to source voltage (Vdss)
IRL5602STRLPBF Applications
There are a lot of Infineon Technologies
IRL5602STRLPBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1460pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -24A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.This device has a drain-to-source resistance of 42mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
IRL5602STRLPBF Features
a continuous drain current (ID) of -24A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 42mOhm
a 20V drain to source voltage (Vdss)
IRL5602STRLPBF Applications
There are a lot of Infineon Technologies
IRL5602STRLPBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRL5602STRLPBF More Descriptions
MOSFET, P-CHANNEL, -20V, 24A, 42 MOHM, 29.3 NC QG, LOGIC LEVEL, D2-PAK
Trans MOSFET P-CH 20V 24A 3-Pin(2 Tab) D2PAK T/R
MOSFET, P, 20V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:24A; Resistance, Rds On:0.042ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Avalanche Single Pulse Energy Eas:290mJ; Current, Idm Pulse:96A; Power, Pd:75W; Thermal Resistance, Junction to Case A:2°C/W; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.0V; Voltage, Vgs th Min:0.7V
Trans MOSFET P-CH 20V 24A 3-Pin(2 Tab) D2PAK T/R
MOSFET, P, 20V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:24A; Resistance, Rds On:0.042ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Avalanche Single Pulse Energy Eas:290mJ; Current, Idm Pulse:96A; Power, Pd:75W; Thermal Resistance, Junction to Case A:2°C/W; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.0V; Voltage, Vgs th Min:0.7V
The three parts on the right have similar specifications to IRL5602STRLPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationResistanceMax Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsREACH SVHCRoHS StatusLead FreeECCN CodeVoltage - Rated DCCurrent RatingNumber of ElementsPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Surface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormJESD-30 CodeConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRL5602STRLPBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®1999Obsolete1 (Unlimited)SMD/SMT62mOhm175°C-55°CMOSFET (Metal Oxide)75W TcSingle75WP-Channel42mOhm @ 12A, 4.5V1V @ 250μA1460pF @ 15V24A Tc44nC @ 4.5V73ns20V2.5V 4.5V±8V84 ns53 ns-24A8V-20V20V1.46nF42mOhm42 mΩ1 VNo SVHCRoHS CompliantLead Free-----------------------
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3--55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)----MOSFET (Metal Oxide)3.8W Ta 140W Tc-140WN-Channel44m Ω @ 18A, 10V2V @ 250μA1800pF @ 25V36A Tc74nC @ 5V81ns-4V 10V±16V--36A16V100V----2 VNo SVHCRoHS CompliantLead FreeEAR99100V36A1------------------
-
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®1998Obsolete1 (Unlimited)----MOSFET (Metal Oxide)3.8W Ta 48W Tc--N-Channel180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V-100V4V 10V±16V-----------Non-RoHS Compliant-----NOT SPECIFIEDNOT SPECIFIED----------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®1998Obsolete1 (Unlimited)----MOSFET (Metal Oxide)3.8W Ta 48W Tc--N-Channel180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V-100V4V 10V±16V-----------Non-RoHS Compliant----1NOT SPECIFIEDNOT SPECIFIEDYESSILICON2LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITYSINGLEGULL WINGR-PSSO-G2SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING10A0.22Ohm35A100V85 mJ
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