IRL5602STRLPBF

Infineon Technologies IRL5602STRLPBF

Part Number:
IRL5602STRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2493181-IRL5602STRLPBF
Description:
MOSFET P-CH 20V 24A D2PAK
ECAD Model:
Datasheet:
IRL5602STRLPBF

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Specifications
Infineon Technologies IRL5602STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL5602STRLPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    1999
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    SMD/SMT
  • Resistance
    62mOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    75W Tc
  • Element Configuration
    Single
  • Power Dissipation
    75W
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    42mOhm @ 12A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1460pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    24A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    44nC @ 4.5V
  • Rise Time
    73ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    84 ns
  • Turn-Off Delay Time
    53 ns
  • Continuous Drain Current (ID)
    -24A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Dual Supply Voltage
    20V
  • Input Capacitance
    1.46nF
  • Drain to Source Resistance
    42mOhm
  • Rds On Max
    42 mΩ
  • Nominal Vgs
    1 V
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRL5602STRLPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1460pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -24A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.This device has a drain-to-source resistance of 42mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.

IRL5602STRLPBF Features
a continuous drain current (ID) of -24A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 42mOhm
a 20V drain to source voltage (Vdss)


IRL5602STRLPBF Applications
There are a lot of Infineon Technologies
IRL5602STRLPBF applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRL5602STRLPBF More Descriptions
MOSFET, P-CHANNEL, -20V, 24A, 42 MOHM, 29.3 NC QG, LOGIC LEVEL, D2-PAK
Trans MOSFET P-CH 20V 24A 3-Pin(2 Tab) D2PAK T/R
MOSFET, P, 20V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:24A; Resistance, Rds On:0.042ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Avalanche Single Pulse Energy Eas:290mJ; Current, Idm Pulse:96A; Power, Pd:75W; Thermal Resistance, Junction to Case A:2°C/W; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.0V; Voltage, Vgs th Min:0.7V
Product Comparison
The three parts on the right have similar specifications to IRL5602STRLPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    REACH SVHC
    RoHS Status
    Lead Free
    ECCN Code
    Voltage - Rated DC
    Current Rating
    Number of Elements
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Terminal Position
    Terminal Form
    JESD-30 Code
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRL5602STRLPBF
    IRL5602STRLPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1999
    Obsolete
    1 (Unlimited)
    SMD/SMT
    62mOhm
    175°C
    -55°C
    MOSFET (Metal Oxide)
    75W Tc
    Single
    75W
    P-Channel
    42mOhm @ 12A, 4.5V
    1V @ 250μA
    1460pF @ 15V
    24A Tc
    44nC @ 4.5V
    73ns
    20V
    2.5V 4.5V
    ±8V
    84 ns
    53 ns
    -24A
    8V
    -20V
    20V
    1.46nF
    42mOhm
    42 mΩ
    1 V
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL540NLPBF
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    3.8W Ta 140W Tc
    -
    140W
    N-Channel
    44m Ω @ 18A, 10V
    2V @ 250μA
    1800pF @ 25V
    36A Tc
    74nC @ 5V
    81ns
    -
    4V 10V
    ±16V
    -
    -
    36A
    16V
    100V
    -
    -
    -
    -
    2 V
    No SVHC
    RoHS Compliant
    Lead Free
    EAR99
    100V
    36A
    1
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL520NL
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    3.8W Ta 48W Tc
    -
    -
    N-Channel
    180m Ω @ 6A, 10V
    2V @ 250μA
    440pF @ 25V
    10A Tc
    20nC @ 5V
    -
    100V
    4V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL520NS
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    3.8W Ta 48W Tc
    -
    -
    N-Channel
    180m Ω @ 6A, 10V
    2V @ 250μA
    440pF @ 25V
    10A Tc
    20nC @ 5V
    -
    100V
    4V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    1
    NOT SPECIFIED
    NOT SPECIFIED
    YES
    SILICON
    2
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
    SINGLE
    GULL WING
    R-PSSO-G2
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    10A
    0.22Ohm
    35A
    100V
    85 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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