Infineon Technologies IRL5602S
- Part Number:
- IRL5602S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071588-IRL5602S
- Description:
- MOSFET P-CH 20V 24A D2PAK
- ECAD Model:
-
- Datasheet:
- IRL5602S
Infineon Technologies IRL5602S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL5602S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1999
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max75W Tc
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs42m Ω @ 12A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1460pF @ 15V
- Current - Continuous Drain (Id) @ 25°C24A Tc
- Gate Charge (Qg) (Max) @ Vgs44nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±8V
- RoHS StatusNon-RoHS Compliant
IRL5602S Description
IRL5602S is a -20v HEXFET?Power MOSFET. The Infineon IRL5602S utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide varietyof application.
IRL5602S Features
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
P-Channel
Fast Switching
Fully Avalanche Rate
IRL5602S Applications
DC motor drive
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits
IRL5602S is a -20v HEXFET?Power MOSFET. The Infineon IRL5602S utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide varietyof application.
IRL5602S Features
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
P-Channel
Fast Switching
Fully Avalanche Rate
IRL5602S Applications
DC motor drive
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits
IRL5602S More Descriptions
Trans MOSFET P-CH 20V 24A 3-Pin(2 Tab) D2PAK
-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
24 A 20 V 0.042 ohm P-CHANNEL Si POWER MOSFET TO-263AB
Power Field-Effect Transistor, 24A I(D), 20V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
24 A 20 V 0.042 ohm P-CHANNEL Si POWER MOSFET TO-263AB
Power Field-Effect Transistor, 24A I(D), 20V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
The three parts on the right have similar specifications to IRL5602S.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ElementsNumber of ChannelsElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningMax Power DissipationNumber of PinsECCN CodeVoltage - Rated DCCurrent RatingNominal VgsREACH SVHCLead FreeView Compare
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IRL5602SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTubeHEXFET®1999Obsolete1 (Unlimited)MOSFET (Metal Oxide)75W TcP-Channel42m Ω @ 12A, 4.5V1V @ 250μA1460pF @ 15V24A Tc44nC @ 4.5V20V2.5V 4.5V±8VNon-RoHS Compliant-------------------------------- -
Through HoleTO-220-3-55°C~175°C TJTube-2011Obsolete1 (Unlimited)MOSFET (Metal Oxide)150W TcN-Channel77mOhm @ 17A, 5V2V @ 250μA2200pF @ 25V28A Tc64nC @ 5V100V4V 5V±10VNon-RoHS CompliantThrough HoleTO-220AB6.000006g175°C-55°C11Single150W8.5 ns170ns80 ns35 ns28A10V100V2.2nF77mOhm77 mΩ8.76mm10.54mm4.7mmNo--------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTube-1997Active1 (Unlimited)MOSFET (Metal Oxide)-N-Channel160mOhm @ 9A, 5V2V @ 250μA930pF @ 25V15A Tc28nC @ 5V100V4V 5V±10VNon-RoHS CompliantThrough HoleTO-262-3-----------15A--930pF-160 mΩ----88W-------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 140W TcN-Channel44m Ω @ 18A, 10V2V @ 250μA1800pF @ 25V36A Tc74nC @ 5V-4V 10V±16VRoHS CompliantThrough Hole----1--140W-81ns--36A16V100V--------3EAR99100V36A2 VNo SVHCLead Free
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