IRL540PBF

Vishay Siliconix IRL540PBF

Part Number:
IRL540PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2479894-IRL540PBF
Description:
MOSFET N-CH 100V 28A TO-220AB
ECAD Model:
Datasheet:
IRL540PBF

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Specifications
Vishay Siliconix IRL540PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL540PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    6.000006g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    77mOhm
  • Terminal Finish
    MATTE TIN
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    150W
  • Turn On Delay Time
    8.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    77m Ω @ 17A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    64nC @ 5V
  • Rise Time
    170ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    80 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    28A
  • Threshold Voltage
    2V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    10V
  • Avalanche Energy Rating (Eas)
    440 mJ
  • Recovery Time
    260 ns
  • Nominal Vgs
    2 V
  • Height
    8.76mm
  • Length
    10.54mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRL540PBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 440 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2200pF @ 25V.This device has a continuous drain current (ID) of [28A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 5V).

IRL540PBF Features
the avalanche energy rating (Eas) is 440 mJ
a continuous drain current (ID) of 28A
the turn-off delay time is 35 ns
a threshold voltage of 2V
a 100V drain to source voltage (Vdss)


IRL540PBF Applications
There are a lot of Vishay Siliconix
IRL540PBF applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRL540PBF More Descriptions
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220
MOSFET N-CH 100V 28A TO-220AB | Siliconix / Vishay IRL540PBF
100V 28A 150W 77m´Î@5V17A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissip
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to IRL540PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Technology
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Case Connection
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Supplier Device Package
    Input Capacitance
    Rds On Max
    Series
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRL540PBF
    IRL540PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    6.000006g
    SILICON
    -55°C~175°C TJ
    Tube
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    77mOhm
    MATTE TIN
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    3
    1
    1
    150W Tc
    Single
    ENHANCEMENT MODE
    150W
    8.5 ns
    N-Channel
    SWITCHING
    77m Ω @ 17A, 5V
    2V @ 250μA
    2200pF @ 25V
    28A Tc
    64nC @ 5V
    170ns
    100V
    4V 5V
    ±10V
    80 ns
    35 ns
    28A
    2V
    TO-220AB
    10V
    440 mJ
    260 ns
    2 V
    8.76mm
    10.54mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL510L
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    6.000006g
    SILICON
    -55°C~175°C TJ
    Tube
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    -
    LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
    MOSFET (Metal Oxide)
    -
    1
    1
    -
    Single
    ENHANCEMENT MODE
    -
    9.3 ns
    N-Channel
    SWITCHING
    540m Ω @ 3.4A, 5V
    2V @ 250μA
    250pF @ 25V
    5.6A Tc
    6.1nC @ 5V
    47ns
    -
    4V 5V
    ±10V
    18 ns
    16 ns
    5.6A
    -
    TO-220AB
    10V
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    -
    Non-RoHS Compliant
    -
    3.7W
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    DRAIN
    0.54Ohm
    100V
    -
    -
    -
    -
    -
    -
  • IRL530L
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    1997
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    160mOhm @ 9A, 5V
    2V @ 250μA
    930pF @ 25V
    15A Tc
    28nC @ 5V
    -
    100V
    4V 5V
    ±10V
    -
    -
    15A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    88W
    -
    -
    -
    -
    -
    -
    -
    TO-262-3
    930pF
    160 mΩ
    -
    -
    -
  • IRL540NLPBF
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2004
    -
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    3.8W Ta 140W Tc
    -
    -
    140W
    -
    N-Channel
    -
    44m Ω @ 18A, 10V
    2V @ 250μA
    1800pF @ 25V
    36A Tc
    74nC @ 5V
    81ns
    -
    4V 10V
    ±16V
    -
    -
    36A
    -
    -
    16V
    -
    -
    2 V
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    100V
    -
    -
    -
    HEXFET®
    100V
    36A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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