Vishay Siliconix IRL540PBF
- Part Number:
- IRL540PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479894-IRL540PBF
- Description:
- MOSFET N-CH 100V 28A TO-220AB
- Datasheet:
- IRL540PBF
Vishay Siliconix IRL540PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL540PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight6.000006g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance77mOhm
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Turn On Delay Time8.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs77m Ω @ 17A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C28A Tc
- Gate Charge (Qg) (Max) @ Vgs64nC @ 5V
- Rise Time170ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)80 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)28A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)10V
- Avalanche Energy Rating (Eas)440 mJ
- Recovery Time260 ns
- Nominal Vgs2 V
- Height8.76mm
- Length10.54mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRL540PBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 440 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2200pF @ 25V.This device has a continuous drain current (ID) of [28A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 5V).
IRL540PBF Features
the avalanche energy rating (Eas) is 440 mJ
a continuous drain current (ID) of 28A
the turn-off delay time is 35 ns
a threshold voltage of 2V
a 100V drain to source voltage (Vdss)
IRL540PBF Applications
There are a lot of Vishay Siliconix
IRL540PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 440 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2200pF @ 25V.This device has a continuous drain current (ID) of [28A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 5V).
IRL540PBF Features
the avalanche energy rating (Eas) is 440 mJ
a continuous drain current (ID) of 28A
the turn-off delay time is 35 ns
a threshold voltage of 2V
a 100V drain to source voltage (Vdss)
IRL540PBF Applications
There are a lot of Vishay Siliconix
IRL540PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRL540PBF More Descriptions
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220
MOSFET N-CH 100V 28A TO-220AB | Siliconix / Vishay IRL540PBF
100V 28A 150W 77m´Î@5V17A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissip
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220
MOSFET N-CH 100V 28A TO-220AB | Siliconix / Vishay IRL540PBF
100V 28A 150W 77m´Î@5V17A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissip
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to IRL540PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureTechnologyPin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Avalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusCase ConnectionDrain-source On Resistance-MaxDrain to Source Breakdown VoltageSupplier Device PackageInput CapacitanceRds On MaxSeriesVoltage - Rated DCCurrent RatingView Compare
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IRL540PBF8 WeeksThrough HoleThrough HoleTO-220-336.000006gSILICON-55°C~175°C TJTube2011e3yesActive1 (Unlimited)3EAR9977mOhmMATTE TINAVALANCHE RATED, LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)311150W TcSingleENHANCEMENT MODE150W8.5 nsN-ChannelSWITCHING77m Ω @ 17A, 5V2V @ 250μA2200pF @ 25V28A Tc64nC @ 5V170ns100V4V 5V±10V80 ns35 ns28A2VTO-220AB10V440 mJ260 ns2 V8.76mm10.54mm4.7mmUnknownNoROHS3 CompliantLead Free---------------
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-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-6.000006gSILICON-55°C~175°C TJTube2016--Obsolete1 (Unlimited)3EAR99--LOGIC LEVEL COMPATIBLE, HIGH RELIABILITYMOSFET (Metal Oxide)-11-SingleENHANCEMENT MODE-9.3 nsN-ChannelSWITCHING540m Ω @ 3.4A, 5V2V @ 250μA250pF @ 25V5.6A Tc6.1nC @ 5V47ns-4V 5V±10V18 ns16 ns5.6A-TO-220AB10V---9.01mm10.41mm4.7mm--Non-RoHS Compliant-3.7WNOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not QualifiedDRAIN0.54Ohm100V------
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-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA----55°C~175°C TJTube1997--Active1 (Unlimited)-----MOSFET (Metal Oxide)--------N-Channel-160mOhm @ 9A, 5V2V @ 250μA930pF @ 25V15A Tc28nC @ 5V-100V4V 5V±10V--15A-----------Non-RoHS Compliant-88W-------TO-262-3930pF160 mΩ---
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-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3---55°C~175°C TJTube2004--Obsolete1 (Unlimited)-EAR99---MOSFET (Metal Oxide)-1-3.8W Ta 140W Tc--140W-N-Channel-44m Ω @ 18A, 10V2V @ 250μA1800pF @ 25V36A Tc74nC @ 5V81ns-4V 10V±16V--36A--16V--2 V---No SVHC-RoHS CompliantLead Free-------100V---HEXFET®100V36A
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