Vishay Siliconix IRL520S
- Part Number:
- IRL520S
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491772-IRL520S
- Description:
- MOSFET N-CH 100V 9.2A D2PAK
- Datasheet:
- IRL520S
Vishay Siliconix IRL520S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL520S.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Weight1.437803g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating9.2A
- Number of Channels1
- Power Dissipation-Max3.7W Ta 60W Tc
- Element ConfigurationSingle
- Turn On Delay Time9.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270mOhm @ 5.5A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds490pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9.2A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
- Rise Time64ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)27 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)9.2A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage100V
- Input Capacitance490pF
- Drain to Source Resistance270mOhm
- Rds On Max270 mΩ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRL520S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 490pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 270mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (4V 5V), this device contributes to a reduction in overall power consumption.
IRL520S Features
a continuous drain current (ID) of 9.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRL520S Applications
There are a lot of Vishay Siliconix
IRL520S applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 490pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 270mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (4V 5V), this device contributes to a reduction in overall power consumption.
IRL520S Features
a continuous drain current (ID) of 9.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRL520S Applications
There are a lot of Vishay Siliconix
IRL520S applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRL520S More Descriptions
MOSFET N-CH 100V 9.2A D2PAK
TRANS MOSFET N-CH 100V 9.2A 3PIN SMD-220
TRANS MOSFET N-CH 100V 9.2A 3PIN SMD-220
The three parts on the right have similar specifications to IRL520S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Surface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRL520SSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~175°C TJTube2009Obsolete1 (Unlimited)175°C-55°C100VMOSFET (Metal Oxide)9.2A13.7W Ta 60W TcSingle9.8 nsN-Channel270mOhm @ 5.5A, 5V2V @ 250μA490pF @ 25V9.2A Tc12nC @ 5V64ns100V4V 5V±10V27 ns21 ns9.2A10V100V490pF270mOhm270 mΩ4.83mm10.67mm9.65mmNon-RoHS CompliantContains Lead---------------------
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK--55°C~175°C TJTube2016Obsolete1 (Unlimited)--100VMOSFET (Metal Oxide)15A-3.7W Ta 88W Tc--N-Channel160mOhm @ 9A, 5V2V @ 250μA930pF @ 25V15A Tc28nC @ 5V-100V4V 5V±10V--15A--930pF-160 mΩ---Non-RoHS CompliantContains Lead--------------------
-
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA----55°C~175°C TJTube1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 48W Tc--N-Channel180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V-100V4V 10V±16V-----------Non-RoHS Compliant-HEXFET®NOT SPECIFIEDNOT SPECIFIED-----------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTube1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 48W Tc--N-Channel180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V-100V4V 10V±16V-----------Non-RoHS Compliant-HEXFET®NOT SPECIFIEDNOT SPECIFIEDYESSILICON2LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITYSINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING10A0.22Ohm35A100V85 mJ
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