IRL520S

Vishay Siliconix IRL520S

Part Number:
IRL520S
Manufacturer:
Vishay Siliconix
Ventron No:
2491772-IRL520S
Description:
MOSFET N-CH 100V 9.2A D2PAK
ECAD Model:
Datasheet:
IRL520S

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix IRL520S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL520S.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2009
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    9.2A
  • Number of Channels
    1
  • Power Dissipation-Max
    3.7W Ta 60W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    9.8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    270mOhm @ 5.5A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    490pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 5V
  • Rise Time
    64ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    27 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    9.2A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    490pF
  • Drain to Source Resistance
    270mOhm
  • Rds On Max
    270 mΩ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRL520S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 490pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 270mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (4V 5V), this device contributes to a reduction in overall power consumption.

IRL520S Features
a continuous drain current (ID) of 9.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)


IRL520S Applications
There are a lot of Vishay Siliconix
IRL520S applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRL520S More Descriptions
MOSFET N-CH 100V 9.2A D2PAK
TRANS MOSFET N-CH 100V 9.2A 3PIN SMD-220
Product Comparison
The three parts on the right have similar specifications to IRL520S.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Series
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRL520S
    IRL520S
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~175°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    9.2A
    1
    3.7W Ta 60W Tc
    Single
    9.8 ns
    N-Channel
    270mOhm @ 5.5A, 5V
    2V @ 250μA
    490pF @ 25V
    9.2A Tc
    12nC @ 5V
    64ns
    100V
    4V 5V
    ±10V
    27 ns
    21 ns
    9.2A
    10V
    100V
    490pF
    270mOhm
    270 mΩ
    4.83mm
    10.67mm
    9.65mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL530S
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    -
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    100V
    MOSFET (Metal Oxide)
    15A
    -
    3.7W Ta 88W Tc
    -
    -
    N-Channel
    160mOhm @ 9A, 5V
    2V @ 250μA
    930pF @ 25V
    15A Tc
    28nC @ 5V
    -
    100V
    4V 5V
    ±10V
    -
    -
    15A
    -
    -
    930pF
    -
    160 mΩ
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL520NL
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 48W Tc
    -
    -
    N-Channel
    180m Ω @ 6A, 10V
    2V @ 250μA
    440pF @ 25V
    10A Tc
    20nC @ 5V
    -
    100V
    4V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL520NS
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tube
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 48W Tc
    -
    -
    N-Channel
    180m Ω @ 6A, 10V
    2V @ 250μA
    440pF @ 25V
    10A Tc
    20nC @ 5V
    -
    100V
    4V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    NOT SPECIFIED
    NOT SPECIFIED
    YES
    SILICON
    2
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
    SINGLE
    GULL WING
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    10A
    0.22Ohm
    35A
    100V
    85 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.