Infineon Technologies IRL520NPBF
- Part Number:
- IRL520NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483286-IRL520NPBF
- Description:
- MOSFET N-CH 100V 10A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRL520NPBF
Infineon Technologies IRL520NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL520NPBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1998
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance220mOhm
- Terminal FinishMATTE TIN OVER NICKEL
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)250
- Current Rating10A
- Time@Peak Reflow Temperature-Max (s)30
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max48W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation48W
- Case ConnectionDRAIN
- Turn On Delay Time4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs180m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Rise Time35ns
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- Fall Time (Typ)22 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)10A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Avalanche Energy Rating (Eas)85 mJ
- Recovery Time160 ns
- Nominal Vgs2 V
- Height8.77mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRL520NPBF Description
IRL520NPBF belongs to the family of HEXFET? power MOSFET provided by Infineon Technologies based on advanced processing techniques. It is able to provide low on-state resistance per silicon area, advanced switching performance, and ruggedized device design. Therefore, it is efficient and reliable for electronic designers to use in a wide range of applications.
IRL520NPBF Features
Low RDS (on)
Low on-state resistance per silicon area
Advanced switching performance
Ruggedized device design
Available in the TO-220AB package
IRL520NPBF Applications
Synchronous rectification
Uninterruptible power supplies
IRL520NPBF belongs to the family of HEXFET? power MOSFET provided by Infineon Technologies based on advanced processing techniques. It is able to provide low on-state resistance per silicon area, advanced switching performance, and ruggedized device design. Therefore, it is efficient and reliable for electronic designers to use in a wide range of applications.
IRL520NPBF Features
Low RDS (on)
Low on-state resistance per silicon area
Advanced switching performance
Ruggedized device design
Available in the TO-220AB package
IRL520NPBF Applications
Synchronous rectification
Uninterruptible power supplies
IRL520NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS /-16V
In a Tube of 50, IRL520NPBF N-Channel MOSFET, 10 A, 100 V LogicFET, 3-Pin TO-220AB Infineon
Single N-Channel 100 V 0.22 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 10A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 60 W
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Package / Case:TO-220AB; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; SMD Marking:IRL520NPBF; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
In a Tube of 50, IRL520NPBF N-Channel MOSFET, 10 A, 100 V LogicFET, 3-Pin TO-220AB Infineon
Single N-Channel 100 V 0.22 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 10A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 60 W
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Package / Case:TO-220AB; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; SMD Marking:IRL520NPBF; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRL520NPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsInput CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningView Compare
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IRL520NPBF12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®1998e3Active1 (Unlimited)3Through HoleEAR99220mOhmMATTE TIN OVER NICKELAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLEFET General Purpose Power100VMOSFET (Metal Oxide)25010A30Not Qualified148W TcSingleENHANCEMENT MODE48WDRAIN4 nsN-ChannelSWITCHING180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V35ns4V 10V±16V22 ns23 ns10A2VTO-220AB16V100V100V85 mJ160 ns2 V8.77mm10.5156mm4.69mmNo SVHCROHS3 CompliantLead Free--------------------- -
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)2-EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierLOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY--MOSFET (Metal Oxide)260-30Not Qualified13.8W Ta 48W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V-4V 10V±16V--------85 mJ------Non-RoHS Compliant-YESSINGLEGULL WINGnot_compliantR-PSSO-G2SINGLE WITH BUILT-IN DIODE100V10A0.22Ohm35A100V---------
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-Through HoleThrough HoleTO-220-3---55°C~175°C TJTube-2011-Obsolete1 (Unlimited)--------MOSFET (Metal Oxide)----1150W TcSingle-150W-8.5 nsN-Channel-77mOhm @ 17A, 5V2V @ 250μA2200pF @ 25V28A Tc64nC @ 5V170ns4V 5V±10V80 ns35 ns28A--10V100V----8.76mm10.54mm4.7mm-Non-RoHS Compliant-------100V----TO-220AB6.000006g175°C-55°C12.2nF77mOhm77 mΩNo
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTubeHEXFET®1998-Obsolete1 (Unlimited)2----LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY--MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED-13.8W Ta 48W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V-4V 10V±16V--------85 mJ------Non-RoHS Compliant-YESSINGLEGULL WING-R-PSSO-G2SINGLE WITH BUILT-IN DIODE100V10A0.22Ohm35A100V---------
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