Vishay Siliconix IRL520
- Part Number:
- IRL520
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2851478-IRL520
- Description:
- MOSFET N-CH 100V 9.2A TO-220AB
- Datasheet:
- IRL520,SiHL520
Vishay Siliconix IRL520 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL520.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating9.2A
- Number of Channels1
- Power Dissipation-Max60W Tc
- Element ConfigurationSingle
- Turn On Delay Time9.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270mOhm @ 5.5A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds490pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9.2A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
- Rise Time64ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)27 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)9.2A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage100V
- Input Capacitance490pF
- Drain to Source Resistance270mOhm
- Rds On Max270 mΩ
- Height8.76mm
- Length10.54mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRL520 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 490pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9.2A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 270mOhm.A turn-on delay time of 9.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
IRL520 Features
a continuous drain current (ID) of 9.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRL520 Applications
There are a lot of Vishay Siliconix
IRL520 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 490pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9.2A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 270mOhm.A turn-on delay time of 9.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
IRL520 Features
a continuous drain current (ID) of 9.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRL520 Applications
There are a lot of Vishay Siliconix
IRL520 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRL520 More Descriptions
MOSFET N-CH 100V 9.2A TO-220AB
LOGIC MOSFET N-CHANNEL 100V
LOGIC MOSFET N-CHANNEL 100V
The three parts on the right have similar specifications to IRL520.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Power DissipationView Compare
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IRL520Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~175°C TJTube2016Obsolete1 (Unlimited)175°C-55°C100VMOSFET (Metal Oxide)9.2A160W TcSingle9.8 nsN-Channel270mOhm @ 5.5A, 5V2V @ 250μA490pF @ 25V9.2A Tc12nC @ 5V64ns100V4V 5V±10V27 ns21 ns9.2A10V100V490pF270mOhm270 mΩ8.76mm10.54mm4.7mmNoNon-RoHS CompliantContains Lead---------------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 48W Tc--N-Channel180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V-100V4V 10V±16V------------Non-RoHS Compliant-YESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierLOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITYSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING10A0.22Ohm35A100V85 mJ-
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK--55°C~175°C TJTube2016Obsolete1 (Unlimited)--100VMOSFET (Metal Oxide)15A-3.7W Ta 88W Tc--N-Channel160mOhm @ 9A, 5V2V @ 250μA930pF @ 25V15A Tc28nC @ 5V-100V4V 5V±10V--15A--930pF-160 mΩ----Non-RoHS CompliantContains Lead--------------------------
-
Through HoleThrough HoleTO-220-3-TO-220AB6.000006g-55°C~175°C TJTube2011Obsolete1 (Unlimited)175°C-55°C-MOSFET (Metal Oxide)-1150W TcSingle8.5 nsN-Channel77mOhm @ 17A, 5V2V @ 250μA2200pF @ 25V28A Tc64nC @ 5V170ns100V4V 5V±10V80 ns35 ns28A10V100V2.2nF77mOhm77 mΩ8.76mm10.54mm4.7mmNoNon-RoHS Compliant----------------1---------150W
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