Infineon Technologies IRL2910PBF

Name: IRL2910PBF
Brand: Infineon Technologies
SKU: 2483209-IRL2910PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL2910PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483209-IRL2910PBF

Description:: MOSFET N-CH 100V 55A TO-220AB

ECAD Model:

Datasheet:: IRL2910PBF

Specifications

Infineon Technologies IRL2910PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL2910PBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
55A
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
26m Ω @ 29A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
55A Tc
Gate Charge (Qg) (Max) @ Vgs
140nC @ 5V
Rise Time
100ns
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Fall Time (Typ)
55 ns
Turn-Off Delay Time
49 ns
Continuous Drain Current (ID)
55A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
48A
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Avalanche Energy Rating (Eas)
520 mJ
Recovery Time
350 ns
Nominal Vgs
2 V
Height
8.77mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRL2910PBF Description

The IRL2910PBF is a single N-channel HEXFET? Power MOSFET that employs advanced processing techniques to obtain the lowest ON-resistance per silicon area feasible. This advantage, combined with the quick switching speed and ruggedized device architecture, results in a very efficient and dependable functioning. At power dissipation levels of up to 50W, the package is universally recommended for all commercial-industrial applications.
I
RL2910PBF Features

Logic level gate drive
Advanced process technology
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

IRL2910PBF Applications

Commercial
Industrial
Power Management

IRL2910PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.026Ohm;ID 55A;TO-220AB;PD 200W;VGS /-16V
Single N-Channel 100 V 0.026 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 100V 55A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 200 W
Power Field-Effect Transistor, 55A I(D), 100V, 0.03Ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-220Ab |Infineon IRL2910
MOSFET, N, 100V, 48A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:190A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Product Comparison

The three parts on the right have similar specifications to IRL2910PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Pbfree Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

Resistance

View Compare
IRL2910PBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

Active

1 (Unlimited)

3

Through Hole

EAR99

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

100V

MOSFET (Metal Oxide)

55A

2.54mm

1

200W Tc

Single

ENHANCEMENT MODE

200W

DRAIN

11 ns

N-Channel

SWITCHING

26m Ω @ 29A, 10V

2V @ 250μA

3700pF @ 25V

55A Tc

140nC @ 5V

100ns

4V 10V

±16V

55 ns

49 ns

55A

2V

TO-220AB

16V

48A

100V

100V

520 mJ

350 ns

2 V

8.77mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL2203STRL

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

-

1996

Discontinued

1 (Unlimited)

2

-

EAR99

LOGIC LEVEL COMPATIBLE

-

-

MOSFET (Metal Oxide)

-

-

1

3.8W Ta 130W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

7m Ω @ 60A, 10V

2.5V @ 250μA

3500pF @ 25V

100A Tc

110nC @ 4.5V

-

4V 10V

±20V

-

-

100A

-

-

-

92A

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

e0

no

TIN LEAD

SINGLE

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PSSO-G2

Not Qualified

SINGLE

30V

0.01Ohm

30V

-

-

IRL2910PBF vs IRL2203STRL
IRL2910SPBF

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

3.8W Ta 200W Tc

-

-

-

-

-

N-Channel

-

26mOhm @ 29A, 10V

2V @ 250μA

3.7pF @ 25V

55A Tc

140nC @ 5V

-

4V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

100V

-

-

D2PAK

-

IRL2910PBF vs IRL2910SPBF
IRL2505PBF

Infineon Technologies

12 Weeks

-

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

Active

1 (Unlimited)

3

Through Hole

EAR99

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

55V

MOSFET (Metal Oxide)

104A

-

1

200W Tc

Single

ENHANCEMENT MODE

200W

DRAIN

12 ns

N-Channel

SWITCHING

8m Ω @ 54A, 10V

2V @ 250μA

5000pF @ 25V

104A Tc

130nC @ 5V

160ns

4V 10V

±16V

84 ns

43 ns

104A

2V

TO-220AB

16V

90A

55V

55V

500 mJ

210 ns

2 V

15.24mm

10.5156mm

4.69mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

NOT SPECIFIED

-

NOT SPECIFIED

-

Not Qualified

-

-

-

-

-

8mOhm

IRL2910PBF vs IRL2505PBF

Certification

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IRL2910PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRL2910PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 55A 3-Pin(3 Tab) TO-220A RoHS: Compliant	915	1000 $0.986
IRL2910PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 55A 3-Pin(3 Tab) TO-220A RoHS: Compliant	236	1000 $0.986
IRL2910PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 55A TO-220AB RoHS: Compliant	3158	1 $2.63 10 $2.383 100 $1.9423 500 $1.54142 1000 $1.30091
IRL2910PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 55A 3-Pin(3 Tab) TO-220A RoHS: Compliant	5500	15 $0.9312 125 $0.864 500 $0.792
IRL2910PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 55A 3-Pin(3 Tab) TO-220A RoHS: Compliant	915	915 $0.986
IRL2910PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 55A 3-Pin(3 Tab) TO-220A RoHS: Compliant	286	8 $0.986
IRL2910PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 55A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	390	1 $1.4169 10 $1.2709 25 $1.2679 50 $1.2649 100 $1.1099 500 $1.0319 1000 $1.0169
IRL2910PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 55A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	300	1 $1.8419 10 $1.4109 25 $1.3449 50 $1.3419 100 $1.2539 500 $1.0969 1000 $0.9069
IRL2910PBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 55A, TO-220AB, Transistor	315	1 $2.25 10 $1.94 100 $1.58 500 $1.4 1000 $1.19 2500 $1.11 5000 $1.08
IRL2910PBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.026O RoHS: Compliant	0	350 $2.44
IRL2910PBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 48A 93.3nC 260mOhm LogLvAB RoHS: Compliant	2432	1 $2.15 10 $1.83 100 $1.46 500 $1.28 1000 $1.06 2000 $0.984
IRL2910PBF DISTI #	Infineon Technologies AG	Single N-Channel 100 V 0.026 Ohm 140 nC HEXFET Pow RoHS: Compliant	4210	10 $1.16 100 $1.06 500 $0.92
IRL2910PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 100V 55A TO220AB, TU	842	10 $1.07 25 $0.98
IRL2910PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 100V 55A TO220AB, EA	231	1 $2 10 $1.07 25 $0.98
IRL2910PBF DISTI #	International Rectifier	55 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFE	1	1 $1.98
IRL2910PBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 48A, 200	327	1 $1.48 3 $1.34 10 $1.09 50 $0.94
IRL2910PBF DISTI #	Infineon Technologies AG	N-CH 100V 48A 26mOhm TO220-3 RoHS: Compliant	0	1000 $0.9484
IRL2910PBF DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 55AI(D),100V,0.03oh RoHS: Compliant	2833	100 $2.32 2833 $2.11
IRL2910PBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	2160	700 $1.06 2160 $0.98
IRL2910PBF DISTI #	Infineon Technologies AG	N-LogL 100V 55A 200W 0,026R TO220AB RoHS: Compliant	80	10 $1.03 50 $0.745 200 $0.675 500 $0.65
IRL2910PBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, 48A, TO-220 RoHS: Compliant	2663	1 $3.41 10 $2.9 100 $2.32 500 $2.03 1000 $1.68 2000 $1.56
IRL2910PBF DISTI #	International Rectifier	N CHANNEL MOSFET, 100V, 55A, TO-220AB RoHS: Compliant	315	1 $3.41 10 $2.9 100 $2.32 500 $2.03 1000 $1.68 2000 $1.56
IRL2910PBF DISTI #	Infineon Technologies AG	MOSFETs RoHS: Compliant	286	1000 $0.986
IRL2910PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 55A 3-Pin(3 Tab) TO-220A RoHS: Compliant	883	1 $3.07 10 $2.12 50 $1.73 100 $1.69
IRL2910PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 55A 3-Pin(3 Tab) TO-220A RoHS: Compliant	5500	5 $2.06 25 $1.67 100 $1.37 500 $1.26 1000 $0.966 2000 $0.896
IRL2910PBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, 48A, TO-220 RoHS: Compliant	2663	5 $1.09 25 $1 100 $0.996 250 $0.993 500 $0.989

IRL2910~~(9)~~
IRL291~~(9)~~
IRL29~~(10)~~
IRL2~~(44)~~
IRL~~(58)~~

Infineon Technologies IRL2910PBF

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