Infineon Technologies IRL1004STRRPBF

Name: IRL1004STRRPBF
Brand: Infineon Technologies
SKU: 2493105-IRL1004STRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL1004STRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2493105-IRL1004STRRPBF

Description:: MOSFET N-CH 40V 130A D2PAK

ECAD Model:

Datasheet:: IRL1004STRRPBF

Specifications

Infineon Technologies IRL1004STRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL1004STRRPBF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
3.8W Ta 200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.5m Ω @ 78A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5330pF @ 25V
Current - Continuous Drain (Id) @ 25°C
130A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 4.5V
Rise Time
210ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
130A
Gate to Source Voltage (Vgs)
16V
Drain-source On Resistance-Max
0.0065Ohm
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
520A
Avalanche Energy Rating (Eas)
700 mJ
Height
4.826mm
Length
10.668mm
Width
9.65mm
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

IRL1004STRRPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5330pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 520A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

IRL1004STRRPBF Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 520A.

IRL1004STRRPBF Applications
There are a lot of Infineon Technologies
IRL1004STRRPBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRL1004STRRPBF More Descriptions

Trans MOSFET N-CH Si 40V 130A 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 40V 130A D2PAK
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
MOSFET, 40V, 110A, 6.5 MOHM, 66.7 NC QG, LOGIC LEVEL, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:130A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRL1004STRRPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

RoHS Status

Surface Mount

Terminal Position

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Supplier Device Package

Termination

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Dual Supply Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

REACH SVHC

Lead Free

View Compare
IRL1004STRRPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

3.8W Ta 200W Tc

Single

ENHANCEMENT MODE

150W

DRAIN

16 ns

N-Channel

SWITCHING

6.5m Ω @ 78A, 10V

1V @ 250μA

5330pF @ 25V

130A Tc

100nC @ 4.5V

210ns

4.5V 10V

±16V

14 ns

25 ns

130A

16V

0.0065Ohm

40V

520A

700 mJ

4.826mm

10.668mm

9.65mm

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL1104S

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN OVER NICKEL

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

2.4W Ta 167W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

8m Ω @ 62A, 10V

1V @ 250μA

3445pF @ 25V

104A Tc

68nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

0.008Ohm

-

416A

340 mJ

-

-

-

-

Non-RoHS Compliant

YES

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

40V

104A

40V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL1004STRRPBF vs IRL1104S
IRL1104PBF

Infineon Technologies

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

167W Tc

Single

-

167W

-

18 ns

N-Channel

-

8mOhm @ 62A, 10V

1V @ 250μA

3445pF @ 25V

104A Tc

68nC @ 4.5V

257ns

4.5V 10V

±16V

64 ns

32 ns

104A

16V

-

40V

-

-

8.77mm

-

-

-

RoHS Compliant

-

-

-

-

40V

-

-

TO-220AB

Through Hole

175°C

-55°C

40V

104A

40V

3.445nF

126 ns

12mOhm

8 mΩ

1 V

No SVHC

Lead Free

IRL1004STRRPBF vs IRL1104PBF
IRL1404ZL

Infineon Technologies

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

-

-

230W Tc

-

-

-

-

-

N-Channel

-

3.1m Ω @ 75A, 10V

2.7V @ 250μA

5080pF @ 25V

75A Tc

110nC @ 5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

40V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL1004STRRPBF vs IRL1404ZL