Infineon Technologies IRG7PH37K10D-EPBF
- Part Number:
- IRG7PH37K10D-EPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497131-IRG7PH37K10D-EPBF
- Description:
- IGBT 1200V 45A 216W TO247AD
- ECAD Model:
-
- Datasheet:
- IRG7PH37K10D(-E)PbF
Infineon Technologies IRG7PH37K10D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7PH37K10D-EPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation216W
- Rise Time-Max45ns
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max216W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.4V
- Max Collector Current45A
- Reverse Recovery Time120 ns
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Test Condition600V, 15A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 15A
- Gate Charge135nC
- Current - Collector Pulsed (Icm)60A
- Td (on/off) @ 25°C50ns/240ns
- Switching Energy1mJ (on), 600μJ (off)
- Gate-Emitter Thr Voltage-Max7.5V
- Fall Time-Max (tf)100ns
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRG7PH37K10D-EPBF Description
IRG7PH37K10D-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7PH37K10D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG7PH37K10D-EPBF has the common source configuration.
IRG7PH37K10D-EPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG7PH37K10D-EPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
IRG7PH37K10D-EPBF More Descriptions
Trans IGBT Chip N-CH 1.2KV 45A 3-Pin(3 Tab) TO-247AD Tube
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel
IGBT W/ULTRAFAST SOFT RECOVERY D
Temperature Sensors - NTC Thermistors Tape & Reel (TR) 0603 (1608 Metric) 1 (Unlimited) 10k Surface Mount ±5% -40°C~125°C THERMISTOR NTC 10KOHM 3380K 0603
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel
IGBT W/ULTRAFAST SOFT RECOVERY D
Temperature Sensors - NTC Thermistors Tape & Reel (TR) 0603 (1608 Metric) 1 (Unlimited) 10k Surface Mount ±5% -40°C~125°C THERMISTOR NTC 10KOHM 3380K 0603
The three parts on the right have similar specifications to IRG7PH37K10D-EPBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationRise Time-MaxElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Test ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Thr Voltage-MaxFall Time-Max (tf)Radiation HardeningRoHS StatusCollector Current-Max (IC)Gate-Emitter Voltage-MaxPower DissipationCollector Emitter Saturation VoltageIGBT TypeView Compare
-
IRG7PH37K10D-EPBFThrough HoleThrough HoleTO-247-33-40°C~150°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors216W45nsSingleStandard216WN-CHANNEL2.4V45A120 ns1.2kV1200V600V, 15A, 10 Ω, 15V2.4V @ 15V, 15A135nC60A50ns/240ns1mJ (on), 600μJ (off)7.5V100nsNoRoHS Compliant------ -
Surface MountSurface MountDie--40°C~175°C TJBulk-ObsoleteNot Applicable-Insulated Gate BIP Transistors---Standard-N-CHANNEL2.3V--1.2kV1200V600V, 150A, 1 Ω, 15V2.3V @ 15V, 150A745nC-70ns/330ns-7.5V--RoHS Compliant150A30V---
-
-------ObsoleteNot Applicable----------------------RoHS Compliant-----
-
Through HoleThrough HoleTO-247-33-55°C~150°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors115W-SingleStandard-N-CHANNEL2.3V30A-1.2kV1200V600V, 15A, 22 Ω, 15V2.3V @ 15V, 15A90nC100A-/229ns543μJ (off)6V-NoRoHS Compliant--115W2.3VTrench
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
28 November 2023
An Introduction to LM393 Low Power Dual Voltage Comparator
Ⅰ. What is LM393 comparator?Ⅱ. What are the features of LM393 comparator?Ⅲ. Pin configuration of LM393 comparatorⅣ. Functions of LM393 comparatorⅤ. Technical parameters of LM393 comparatorⅥ. Typical circuit... -
28 November 2023
Get to Know the TL494 Pulse-Width-Modulation Control Circuits
Ⅰ. Overview of TL494Ⅱ. What are the features of TL494?Ⅲ. TL494 symbol, footprint and pin configurationⅣ. Internal structure and working parts of TL494Ⅴ. How does the TL494 work?Ⅵ.... -
29 November 2023
TDA7293 Audio Power Amplifier: Symbol, Features, Applications and TDA7293 vs TDA8954
Ⅰ. Overview of TDA7293Ⅱ. Symbol, footprint and pin configuration of TDA7293Ⅲ. Features of TDA7293Ⅳ. Technical parameters of TDA7293Ⅴ. What are the applications of TDA7293?Ⅵ. What is the difference... -
29 November 2023
All You Need to Know the CD4013 CMOS Dual D Flip Flop
Ⅰ. What is a D flip-flop?Ⅱ. Overview of CD4013Ⅲ. Pin configuration of CD4013Ⅳ. What are the features of CD4013?Ⅴ. How does the CD4013 work?Ⅵ. What are the applications...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.