Infineon Technologies IRFZ44NPBF

Name: IRFZ44NPBF
Brand: Infineon Technologies
SKU: 2478757-IRFZ44NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFZ44NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2478757-IRFZ44NPBF

Description:: MOSFET N-CH 55V 49A TO-220AB

ECAD Model:

Datasheet:: IRFZ44NPBF

Specifications

Infineon Technologies IRFZ44NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ44NPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2001
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
17.5MOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
49A
Time@Peak Reflow Temperature-Max (s)
30
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
94W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
83W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
17.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1470pF @ 25V
Current - Continuous Drain (Id) @ 25°C
49A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
60ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
44 ns
Continuous Drain Current (ID)
49A
Threshold Voltage
2.1V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Recovery Time
95 ns
Nominal Vgs
2.1 V
Height
8.77mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFZ44NPBF Description
The IRFZ44NPBF is an N-channel HEXFET? Power MOSFET with a low on-resistance per silicon area and quick switching speed. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.

IRFZ44NPBF Features
Lead-Free
Fast Switching
Dynamic dv/dt Rating
Fully Avalanche Rated
Ultra-Low On-Resistance
Advanced Process Technology
175°C Operating Temperature

IRFZ44NPBF Applications
Power management

IRFZ44NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;TO-220AB;PD 94W;-55deg
Transistor NPN Field Effect IRFZ44/IRFZ44N INTERNATIONAL RECTIFIER Ampere=46 V=250 TO220
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 41A/55V TO220 IRFZ 44 NPBF
Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB Tube
55V 49A 94W 17.5m´Î@10V25A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 250 W
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:49A; On Resistance, Rds(on):17.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes
MOSFET, N, 55V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:49A; Current Temperature:25°C; Device Marking:IRFZ44NPBF; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFZ44NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Lead Pitch

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Surface Mount

Terminal Finish

HTS Code

Terminal Position

Terminal Form

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRFZ44NPBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2001

e3

Active

1 (Unlimited)

3

Through Hole

EAR99

17.5MOhm

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

55V

MOSFET (Metal Oxide)

250

49A

30

2.54mm

1

94W Tc

Single

ENHANCEMENT MODE

83W

DRAIN

12 ns

N-Channel

SWITCHING

17.5m Ω @ 25A, 10V

4V @ 250μA

1470pF @ 25V

49A Tc

63nC @ 10V

60ns

10V

±20V

45 ns

44 ns

49A

2.1V

TO-220AB

20V

55V

55V

95 ns

2.1 V

8.77mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFZ34NLPBF

Infineon Technologies

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

-

-55°C~175°C TJ

Tube

HEXFET®

1997

-

Obsolete

1 (Unlimited)

-

-

-

40mOhm

-

-

55V

MOSFET (Metal Oxide)

-

29A

-

-

1

3.8W Ta 68W Tc

-

-

68W

-

7 ns

N-Channel

-

40mOhm @ 16A, 10V

4V @ 250μA

700pF @ 25V

29A Tc

34nC @ 10V

49ns

10V

±20V

40 ns

31 ns

29A

-

-

20V

55V

-

-

-

-

-

-

-

No

RoHS Compliant

Lead Free

TO-262

175°C

-55°C

55V

700pF

40mOhm

40 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFZ44NPBF vs IRFZ34NLPBF
IRFZ34NS

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1997

e0

Obsolete

1 (Unlimited)

2

-

EAR99

-

AVALANCHE RATED, HIGH RELIABILITY

-

-

MOSFET (Metal Oxide)

225

-

30

-

1

3.8W Ta 68W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

40m Ω @ 16A, 10V

4V @ 250μA

700pF @ 25V

29A Tc

34nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

55V

-

-

-

YES

Tin/Lead (Sn/Pb)

8541.29.00.95

SINGLE

GULL WING

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

29A

0.04Ohm

100A

55V

130 mJ

IRFZ44NPBF vs IRFZ34NS
IRFZ44NL

Infineon Technologies

-

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2001

-

Obsolete

1 (Unlimited)

3

-

-

-

AVALANCHE RATED, HIGH RELIABILITY

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

-

1

3.8W Ta 94W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

17.5m Ω @ 25A, 10V

4V @ 250μA

1470pF @ 25V

49A Tc

63nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

55V

-

-

-

NO

-

-

SINGLE

-

R-PSIP-T3

-

SINGLE WITH BUILT-IN DIODE

49A

0.0175Ohm

160A

55V

150 mJ

IRFZ44NPBF vs IRFZ44NL

Certification

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IRFZ44NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	9363	1 $0.5453
IRFZ44NPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 49A TO-220AB RoHS: Compliant	4672	1 $1.39 50 $1.1244 100 $0.9918 500 $0.78386 1000 $0.63259
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	23298	32 $0.528 200 $0.48 1000 $0.4176
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	9363	18 $0.5453
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	1500	27 $0.9103 50 $0.6604 100 $0.5852 200 $0.5457
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	725	15 $1.7
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	97130	1 $0.5409 10 $0.5389 25 $0.5379 50 $0.5369 100 $0.4859 500 $0.4559 1000 $0.3349
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	1 $0.3979 10 $0.3919 25 $0.3869 50 $0.3809 100 $0.3679 500 $0.3549 1000 $0.3489
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	0
IRFZ44NPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 49A TO-220AB, Transistor P	5285	1 $1.28 10 $1.1 100 $0.858 500 $0.767 1000 $0.619 2500 $0.557 10000 $0.538
IRFZ44NPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 17.5 Mi RoHS: Compliant	2004	1 $0.891 10 $0.787 100 $0.686 500 $0.594 1000 $0.524
IRFZ44NPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 55V 49A 17.5mOhm 42nC RoHS: Compliant	13445	1 $1.13 10 $0.963 100 $0.74 500 $0.654 1000 $0.516 2000 $0.458 10000 $0.441
IRFZ44NPBF DISTI #	International Rectifier	RoHS: Not Compliant	215	1 $0.45 25 $0.42 100 $0.4 500 $0.39 1000 $0.37
IRFZ44NPBF DISTI #	Infineon Technologies AG	Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET Power RoHS: Compliant	37270	20 $0.55 200 $0.5 1000 $0.435
IRFZ44NPBF DISTI #	International Rectifier		50
IRFZ44NPBF DISTI #	International Rectifier	49 A, 55 V, 0.0175 OHM, N-CHANNEL, SI, POWER, MOSF	228	1 $1 28 $0.5 121 $0.35
IRFZ44NPBF DISTI #	TT Electronics Resistors	49 A, 55 V, 0.0175 OHM, N-CHANNEL, SI, POWER, MOSF	1	1 $1
IRFZ44NPBF DISTI #	International Rectifier	49 A, 55 V, 0.0175 OHM, N-CHANNEL, SI, POWER, MOSF	8	1 $1.25 5 $1
IRFZ44NPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 55V 49A TO220AB, TU	700	50 $0.568 250 $0.428 1000 $0.299 2500 $0.265
IRFZ44NPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 55V 49A TO220AB, EA	11760	1 $2 20 $0.6 25 $0.55
IRFZ44NPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 55V, 41A, 83W,	512	1 $0.8 5 $0.61 25 $0.5 100 $0.44 500 $0.36
IRFZ44NPBF DISTI #	International Rectifier	RoHS: Compliant	42
IRFZ44NPBF DISTI #	Infineon Technologies AG	N-Ch 55V 49A 94W 0,0175R TO220AB RoHS: Compliant	11990	10 $0.5995 50 $0.3595 200 $0.2995 500 $0.2885
IRFZ44NPBF DISTI #	Infineon Technologies AG	INSTOCK	1230
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	1500	5 $0.772 10 $0.721 50 $0.523 100 $0.463
IRFZ44NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	725	5 $1.36 10 $1.1 50 $0.742 100 $0.628
IRFZ44NPBF DISTI #	International Rectifier	N CHANNEL MOSFET, 55V, 49A TO-220AB RoHS: Compliant	6230	1 $0.68
IRFZ44NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 41A, TO-220 RoHS: Compliant	14999	1 $1.79 10 $1.53 100 $1.18 500 $1.04 1000 $0.817 2000 $0.725 10000 $0.699
IRFZ44NPBF DISTI #	INF	RoHS: Compliant	50	1350 $0.6836
IRFZ44NPBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	303372	2950 $0.24 303372 $0.22
IRFZ44NPBF DISTI #	Infineon Technologies AG	Insulated Gate BipolarTransistor,60AI(C),600VV(BR) RoHS: Compliant	26093	200 $1.1 26093 $1
IRFZ44NPBF DISTI #	Infineon Technologies AG	55V,17.5m,49A,N-Channel Power MOSFET	1200	1 $0.74 100 $0.62 500 $0.55 1000 $0.53
IRFZ44NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 41A, TO-220 RoHS: Compliant	13294	5 $0.618 25 $0.567 100 $0.504 250 $0.441 500 $0.387

IRFZ44N~~(13)~~
IRFZ44~~(59)~~
IRFZ4~~(58)~~
IRFZ~~(61)~~
IRF~~(69)~~

Infineon Technologies IRFZ44NPBF

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