Infineon Technologies IRFZ34NS
- Part Number:
- IRFZ34NS
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853701-IRFZ34NS
- Description:
- MOSFET N-CH 55V 29A D2PAK
- ECAD Model:
-
- Datasheet:
- IRFZ34NS
Infineon Technologies IRFZ34NS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ34NS.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)225
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 68W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs40m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C29A Tc
- Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)29A
- Drain-source On Resistance-Max0.04Ohm
- Pulsed Drain Current-Max (IDM)100A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)130 mJ
- RoHS StatusNon-RoHS Compliant
IRFZ34NS Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The is a surface mount power package that can handle die sizes up to HEX-4. It has the highest power capabilities and the lowest on-resistance of any surface mount package currently available. Because of its low internal connection resistance, the D2 Pak is appropriate for high current applications and can dissipate in a conventional surface mount application. For low-profile applications, the through-hole variant (IRFZ34NL) is offered.
IRFZ34NS Features
Case Connection: DRAIN
Transistor Application: Switching
FET Type: N-Channel
RoHS Status: Non-RoHS Compliant
IRFZ34NS Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The is a surface mount power package that can handle die sizes up to HEX-4. It has the highest power capabilities and the lowest on-resistance of any surface mount package currently available. Because of its low internal connection resistance, the D2 Pak is appropriate for high current applications and can dissipate in a conventional surface mount application. For low-profile applications, the through-hole variant (IRFZ34NL) is offered.
IRFZ34NS Features
Case Connection: DRAIN
Transistor Application: Switching
FET Type: N-Channel
RoHS Status: Non-RoHS Compliant
IRFZ34NS Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFZ34NS More Descriptions
Transistor NPN Field Effect IRFZ34/SO/IRFZ34NS INTERNATIONAL RECTIFIER Ampere=26 V=55 TO263
HEXFET Power MOSFET | MOSFET N-CH 55V 29A D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
HEXFET Power MOSFET | MOSFET N-CH 55V 29A D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
The three parts on the right have similar specifications to IRFZ34NS.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthLead FreeView Compare
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IRFZ34NSSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubeHEXFET®1997e0Obsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY8541.29.00.95MOSFET (Metal Oxide)SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 68W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING40m Ω @ 16A, 10V4V @ 250μA700pF @ 25V29A Tc34nC @ 10V55V10V±20V29A0.04Ohm100A55V130 mJNon-RoHS Compliant------------------------ -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1997e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY-MOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE110W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING23m Ω @ 29A, 10V4V @ 250μA1360pF @ 25V48A Tc60nC @ 10V60V10V±20V48A0.023Ohm192A60V220 mJNon-RoHS Compliant-----------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubeHEXFET®1997e0Obsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY-MOSFET (Metal Oxide)SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE110W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING23m Ω @ 29A, 10V4V @ 250μA1360pF @ 25V48A Tc60nC @ 10V60V10V±20V48A0.023Ohm192A60V220 mJNon-RoHS Compliant-----------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)-2016-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--------3.7W Ta 150W Tc--N-Channel-28mOhm @ 31A, 10V4V @ 250μA1900pF @ 25V50A Tc67nC @ 10V60V10V±20V-----Non-RoHS CompliantSurface Mount3D2PAK1.437803g150°C-55°C60V50A1Single14 ns110ns92 ns45 ns50A20V1.9nF28mOhm28 mΩ4.83mm10.67mm9.65mmContains Lead
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