Vishay Siliconix IRFZ20
- Part Number:
- IRFZ20
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2851415-IRFZ20
- Description:
- MOSFET N-CH 50V 15A TO-220AB
- Datasheet:
- IRFZ20
Vishay Siliconix IRFZ20 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFZ20.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight6.000006g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Additional FeatureULTRA LOW-ON RESISTANCE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC50V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)240
- Current Rating15A
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max40W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds850pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time45ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)15A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)60A
- Avalanche Energy Rating (Eas)5 mJ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFZ20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 5 mJ.A device's maximum input capacitance is 850pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFZ20 Features
the avalanche energy rating (Eas) is 5 mJ
a continuous drain current (ID) of 15A
the turn-off delay time is 20 ns
based on its rated peak drain current 60A.
IRFZ20 Applications
There are a lot of Vishay Siliconix
IRFZ20 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 5 mJ.A device's maximum input capacitance is 850pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFZ20 Features
the avalanche energy rating (Eas) is 5 mJ
a continuous drain current (ID) of 15A
the turn-off delay time is 20 ns
based on its rated peak drain current 60A.
IRFZ20 Applications
There are a lot of Vishay Siliconix
IRFZ20 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFZ20 More Descriptions
Trans MOSFET N-CH 50V 15A 3-Pin(3 Tab) TO-220AB
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRFZ20.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountSeriesTerminal PositionJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinTerminal FormQualification StatusView Compare
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IRFZ20Through HoleThrough HoleTO-220-336.000006gSILICON-55°C~150°C TJTube2016e0noObsolete1 (Unlimited)3EAR99TIN LEADULTRA LOW-ON RESISTANCEFET General Purpose Power50VMOSFET (Metal Oxide)24015A3031140W TcSingleENHANCEMENT MODEDRAIN15 nsN-ChannelSWITCHING100m Ω @ 10A, 10V4V @ 250μA850pF @ 25V15A Tc17nC @ 10V45ns10V±20V15 ns20 ns15ATO-220AB20V60A5 mJ9.01mm10.41mm4.7mmNoNon-RoHS CompliantContains Lead------------
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-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--SILICON-55°C~175°C TJTube1997e3-Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose Power-MOSFET (Metal Oxide)260-40-1-3.8W Ta 45W Tc-ENHANCEMENT MODEDRAIN-N-ChannelSWITCHING70m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V-10V±20V-----68A71 mJ----Non-RoHS Compliant-NOHEXFET®SINGLER-PSIP-T3SINGLE WITH BUILT-IN DIODE55V17A0.07Ohm55V--
-
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--SILICON-55°C~175°C TJTube2001--Obsolete1 (Unlimited)3--AVALANCHE RATED, HIGH RELIABILITY--MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED-1-3.8W Ta 94W Tc-ENHANCEMENT MODEDRAIN-N-ChannelSWITCHING17.5m Ω @ 25A, 10V4V @ 250μA1470pF @ 25V49A Tc63nC @ 10V-10V±20V-----160A150 mJ----Non-RoHS Compliant-NOHEXFET®SINGLER-PSIP-T3SINGLE WITH BUILT-IN DIODE55V49A0.0175Ohm55V--
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--SILICON-55°C~175°C TJTube1997e0-Obsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY--MOSFET (Metal Oxide)225-30-1-110W Tc-ENHANCEMENT MODEDRAIN-N-ChannelSWITCHING23m Ω @ 29A, 10V4V @ 250μA1360pF @ 25V48A Tc60nC @ 10V-10V±20V-----192A220 mJ----Non-RoHS Compliant-YESHEXFET®SINGLER-PSSO-G2SINGLE WITH BUILT-IN DIODE60V48A0.023Ohm60VGULL WINGNot Qualified
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