IRFZ20

Vishay Siliconix IRFZ20

Part Number:
IRFZ20
Manufacturer:
Vishay Siliconix
Ventron No:
2851415-IRFZ20
Description:
MOSFET N-CH 50V 15A TO-220AB
ECAD Model:
Datasheet:
IRFZ20

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  • IRFZ20 Detail Images
Specifications
Vishay Siliconix IRFZ20 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFZ20.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    6.000006g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Additional Feature
    ULTRA LOW-ON RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    50V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    240
  • Current Rating
    15A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    850pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    15A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    45ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    15A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Avalanche Energy Rating (Eas)
    5 mJ
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFZ20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 5 mJ.A device's maximum input capacitance is 850pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFZ20 Features
the avalanche energy rating (Eas) is 5 mJ
a continuous drain current (ID) of 15A
the turn-off delay time is 20 ns
based on its rated peak drain current 60A.


IRFZ20 Applications
There are a lot of Vishay Siliconix
IRFZ20 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFZ20 More Descriptions
Trans MOSFET N-CH 50V 15A 3-Pin(3 Tab) TO-220AB
French Electronic Distributor since 1988
IRFZ20 Detail Images
Product Comparison
The three parts on the right have similar specifications to IRFZ20.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Series
    Terminal Position
    JESD-30 Code
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Terminal Form
    Qualification Status
    View Compare
  • IRFZ20
    IRFZ20
    Through Hole
    Through Hole
    TO-220-3
    3
    6.000006g
    SILICON
    -55°C~150°C TJ
    Tube
    2016
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN LEAD
    ULTRA LOW-ON RESISTANCE
    FET General Purpose Power
    50V
    MOSFET (Metal Oxide)
    240
    15A
    30
    3
    1
    1
    40W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    100m Ω @ 10A, 10V
    4V @ 250μA
    850pF @ 25V
    15A Tc
    17nC @ 10V
    45ns
    10V
    ±20V
    15 ns
    20 ns
    15A
    TO-220AB
    20V
    60A
    5 mJ
    9.01mm
    10.41mm
    4.7mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFZ24NL
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    1997
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    260
    -
    40
    -
    1
    -
    3.8W Ta 45W Tc
    -
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    SWITCHING
    70m Ω @ 10A, 10V
    4V @ 250μA
    370pF @ 25V
    17A Tc
    20nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    68A
    71 mJ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    HEXFET®
    SINGLE
    R-PSIP-T3
    SINGLE WITH BUILT-IN DIODE
    55V
    17A
    0.07Ohm
    55V
    -
    -
  • IRFZ44NL
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    2001
    -
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    AVALANCHE RATED, HIGH RELIABILITY
    -
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    1
    -
    3.8W Ta 94W Tc
    -
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    SWITCHING
    17.5m Ω @ 25A, 10V
    4V @ 250μA
    1470pF @ 25V
    49A Tc
    63nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    160A
    150 mJ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    HEXFET®
    SINGLE
    R-PSIP-T3
    SINGLE WITH BUILT-IN DIODE
    55V
    49A
    0.0175Ohm
    55V
    -
    -
  • IRFZ44ES
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    1997
    e0
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    -
    -
    MOSFET (Metal Oxide)
    225
    -
    30
    -
    1
    -
    110W Tc
    -
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    SWITCHING
    23m Ω @ 29A, 10V
    4V @ 250μA
    1360pF @ 25V
    48A Tc
    60nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    192A
    220 mJ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    HEXFET®
    SINGLE
    R-PSSO-G2
    SINGLE WITH BUILT-IN DIODE
    60V
    48A
    0.023Ohm
    60V
    GULL WING
    Not Qualified
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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