Vishay Siliconix IRFZ14PBF
- Part Number:
- IRFZ14PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478733-IRFZ14PBF
- Description:
- MOSFET N-CH 60V 10A TO-220AB
- Datasheet:
- IRFZ14PBF
Vishay Siliconix IRFZ14PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFZ14PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight6.000006g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2008
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance200mOhm
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating10A
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max43W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation36W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs200m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)10A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)40A
- Avalanche Energy Rating (Eas)47 mJ
- Recovery Time140 ns
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFZ14PBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 47 mJ.A device's maximal input capacitance is 300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFZ14PBF Features
the avalanche energy rating (Eas) is 47 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
based on its rated peak drain current 40A.
a threshold voltage of 2V
IRFZ14PBF Applications
There are a lot of Vishay Siliconix
IRFZ14PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 47 mJ.A device's maximal input capacitance is 300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFZ14PBF Features
the avalanche energy rating (Eas) is 47 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
based on its rated peak drain current 40A.
a threshold voltage of 2V
IRFZ14PBF Applications
There are a lot of Vishay Siliconix
IRFZ14PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFZ14PBF More Descriptions
Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - TO-220AB
IRFZ14PBF N-channel MOSFET Transistor, 10 A, 60 V, 3-Pin TO-220AB | Siliconix / Vishay IRFZ14PBF
Trans MOSFET N-CH 60V 10A 3-Pin (3 Tab) TO-220AB
MOSFET, N CH, 60V, 0.2OHM, 10A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 43W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C
IRFZ14PBF N-channel MOSFET Transistor, 10 A, 60 V, 3-Pin TO-220AB | Siliconix / Vishay IRFZ14PBF
Trans MOSFET N-CH 60V 10A 3-Pin (3 Tab) TO-220AB
MOSFET, N CH, 60V, 0.2OHM, 10A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 43W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C
The three parts on the right have similar specifications to IRFZ14PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceVoltage - Rated DCTechnologyCurrent RatingPin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountSeriesJESD-609 CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinTerminal FormQualification StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRFZ14PBF8 WeeksThrough HoleThrough HoleTO-220-336.000006gSILICON-55°C~175°C TJTube2008yesActive1 (Unlimited)3EAR99200mOhm60VMOSFET (Metal Oxide)10A31143W TcSingleENHANCEMENT MODE36WDRAIN10 nsN-ChannelSWITCHING200m Ω @ 6A, 10V4V @ 250μA300pF @ 25V10A Tc11nC @ 10V50ns10V±20V19 ns13 ns10A2VTO-220AB20V60V40A47 mJ140 ns4 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free------------------------
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--SILICON-55°C~175°C TJTube1997-Obsolete1 (Unlimited)3EAR99--MOSFET (Metal Oxide)--1-3.8W Ta 45W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING70m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V-10V±20V-------68A71 mJ-------Non-RoHS Compliant-NOHEXFET®e3Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose PowerSINGLE26040R-PSIP-T3SINGLE WITH BUILT-IN DIODE55V17A0.07Ohm55V--------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--SILICON-55°C~175°C TJTape & Reel (TR)1997-Obsolete1 (Unlimited)2EAR99-60VMOSFET (Metal Oxide)48A-1-110W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING23m Ω @ 29A, 10V4V @ 250μA1360pF @ 25V48A Tc60nC @ 10V60ns10V±20V--48A----192A220 mJ-------Non-RoHS CompliantContains Lead-HEXFET®e3Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY-SINGLE26030R-PSSO-G2SINGLE WITH BUILT-IN DIODE--0.023Ohm-GULL WINGNot Qualified------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.437803g--55°C~175°C TJTape & Reel (TR)2016-Obsolete1 (Unlimited)---60VMOSFET (Metal Oxide)50A--13.7W Ta 150W TcSingle---14 nsN-Channel-28mOhm @ 31A, 10V4V @ 250μA1900pF @ 25V50A Tc67nC @ 10V110ns10V±20V92 ns45 ns50A--20V-----4.83mm10.67mm9.65mm--Non-RoHS CompliantContains Lead-----------60V-----D2PAK150°C-55°C1.9nF28mOhm28 mΩ
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