Infineon Technologies IRFS4310PBF
- Part Number:
- IRFS4310PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3554714-IRFS4310PBF
- Description:
- MOSFET N-CH 100V 130A D2PAK
- ECAD Model:
-
- Datasheet:
- IRFS4310PBF
Infineon Technologies IRFS4310PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS4310PBF.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2006
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7670pF @ 50V
- Current - Continuous Drain (Id) @ 25°C130A Tc
- Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.007Ohm
- Pulsed Drain Current-Max (IDM)550A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)980 mJ
- RoHS StatusROHS3 Compliant
IRFS4310PBF Description
IRFS4310PBF is a 100v HEXFET? Power MOSFET. The Infineon IRFS4310PBF can be applied in High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High-Speed Power Switching, and Hard Switched and High-Frequency Circuits. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRFS4310PBF is in the TO-252-3 package with 330W power dissipation.
IRFS4310PBF Features
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRFS4310PBF Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRFS4310PBF is a 100v HEXFET? Power MOSFET. The Infineon IRFS4310PBF can be applied in High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High-Speed Power Switching, and Hard Switched and High-Frequency Circuits. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRFS4310PBF is in the TO-252-3 package with 330W power dissipation.
IRFS4310PBF Features
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRFS4310PBF Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRFS4310PBF More Descriptions
Transistor MOSFET N Channel 100 Volt 140 Amp 3-Pin 2 Tab D2Pak
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V
100V Single N-Channel IR MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 100V 130A 3-Pin(2 Tab) D2PAK
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:100V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:140A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):7mohm; Package/Case:D2-Pak; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V
100V Single N-Channel IR MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 100V 130A 3-Pin(2 Tab) D2PAK
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:100V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:140A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):7mohm; Package/Case:D2-Pak; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRFS4310PBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningWeightNumber of ChannelsElement ConfigurationTerminationResistanceVoltage - Rated DCCurrent RatingThreshold VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCLead FreeView Compare
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IRFS4310PBFSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubeHEXFET®2006e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING7m Ω @ 75A, 10V4V @ 250μA7670pF @ 50V130A Tc250nC @ 10V100V10V±20V75A0.007Ohm550A100V980 mJROHS3 Compliant---------------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTube-2008-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)------1-144W Tc--N-Channel-42mOhm @ 21A, 10V5V @ 100μA1750pF @ 50V33A Tc40nC @ 10V150V10V±20V-----RoHS CompliantSurface Mount3D2PAK175°C-55°C144W8.9 ns23.1ns13.1 ns17.2 ns33A20V150V1.75nF42mOhm42 mΩ4.826mm10.668mm9.652mmNo-------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTape & Reel (TR)-2016-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--------170W Tc--N-Channel-520mOhm @ 6.6A, 10V4V @ 250μA1423pF @ 25V11A Tc52nC @ 10V500V10V±30V-----Non-RoHS CompliantSurface Mount3D2PAK150°C-55°C-14 ns35ns28 ns32 ns11A30V-1.423nF520mOhm520 mΩ4.83mm10.67mm9.65mm-1.437803g1Single----------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®2006-Discontinued1 (Unlimited)-EAR99--MOSFET (Metal Oxide)--------230W Tc--N-Channel-5.8m Ω @ 75A, 10V4V @ 150μA4750pF @ 50V120A Tc110nC @ 10V-10V±20V-----ROHS3 CompliantSurface Mount3---230W15 ns64ns65 ns38 ns120A20V75V---2.39mm6.73mm6.22mmNo--SingleSMD/SMT5.8MOhm75V120A4V75V50 ns4 VNo SVHCLead Free
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