Vishay Siliconix IRFL9110TRPBF
- Part Number:
- IRFL9110TRPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478105-IRFL9110TRPBF
- Description:
- MOSFET P-CH 100V 1.1A SOT223
- Datasheet:
- IRFL9110TRPBF
Vishay Siliconix IRFL9110TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFL9110TRPBF.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Supplier Device PackageSOT-223
- Weight250.212891mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.2Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta 3.1W Tc
- Power Dissipation2W
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs1.2Ohm @ 660mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.1A Tc
- Gate Charge (Qg) (Max) @ Vgs8.7nC @ 10V
- Rise Time27ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)-1.1A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Input Capacitance200pF
- Max Junction Temperature (Tj)150°C
- Drain to Source Resistance1.2Ohm
- Rds On Max1.2 Ω
- Height1.8mm
- Length6.7mm
- Width3.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFL9110TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 200pF @ 25V.This device conducts a continuous drain current (ID) of -1.1A, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFL9110TRPBF Features
a continuous drain current (ID) of -1.1A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)
IRFL9110TRPBF Applications
There are a lot of Vishay Siliconix
IRFL9110TRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 200pF @ 25V.This device conducts a continuous drain current (ID) of -1.1A, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFL9110TRPBF Features
a continuous drain current (ID) of -1.1A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)
IRFL9110TRPBF Applications
There are a lot of Vishay Siliconix
IRFL9110TRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFL9110TRPBF More Descriptions
Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - SOT-223-3
IRFL9110TRPBF P-channel MOSFET Transistor, 0.69 A, 100 V, 3 Tab-Pin SOT-223 | Siliconix / Vishay IRFL9110TRPBF
Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
IRFL9110TRPBF P-channel MOSFET Transistor, 0.69 A, 100 V, 3 Tab-Pin SOT-223 | Siliconix / Vishay IRFL9110TRPBF
Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
The three parts on the right have similar specifications to IRFL9110TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceMax Junction Temperature (Tj)Drain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingVoltage - Rated DCCurrent RatingElement ConfigurationNominal VgsView Compare
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IRFL9110TRPBF8 WeeksSurface MountSurface MountTO-261-4, TO-261AA4SOT-223250.212891mg-55°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)1.2Ohm150°C-55°CMOSFET (Metal Oxide)112W Ta 3.1W Tc2W10 nsP-Channel1.2Ohm @ 660mA, 10V4V @ 250μA200pF @ 25V1.1A Tc8.7nC @ 10V27ns100V10V±20V17 ns15 ns-1.1A-4V20V-100V200pF150°C1.2Ohm1.2 Ω1.8mm6.7mm3.7mmUnknownNoROHS3 CompliantLead Free------
-
-Surface MountSurface MountTO-261-4, TO-261AA4SOT-223--55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)--2W Ta 3.1W Tc-8.2 nsN-Channel1.5Ohm @ 580mA, 10V4V @ 250μA140pF @ 25V960mA Tc8.2nC @ 10V17ns200V10V±20V8.9 ns14 ns960mA-20V200V140pF-1.5Ohm1.5 Ω-----Non-RoHS Compliant------
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-Surface MountSurface MountTO-261-4, TO-261AA3SOT-223250.212891mg-55°C~150°C TJTube2012Obsolete1 (Unlimited)200mOhm150°C-55°CMOSFET (Metal Oxide)112W Ta 3.1W Tc2W10 nsN-Channel200mOhm @ 1.6A, 10V4V @ 250μA300pF @ 25V2.7A Tc11nC @ 10V50ns60V10V±20V19 ns13 ns2.7A4V20V60V300pF-200mOhm200 mΩ1.8mm6.7mm3.7mmUnknownNoROHS3 CompliantLead FreeTin60V2.7ASingle-
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8 WeeksSurface MountSurface MountTO-261-4, TO-261AA4SOT-223250.212891mg-55°C~150°C TJTape & Reel (TR)2014Active1 (Unlimited)2Ohm150°C-55°CMOSFET (Metal Oxide)112W Ta 3.1W Tc2W7 nsN-Channel2Ohm @ 470mA, 10V4V @ 250μA140pF @ 25V790mA Tc8.2nC @ 10V7.6ns250V10V±20V7 ns16 ns790mA-20V250V140pF-2Ohm2 Ω1.8mm6.7mm3.7mmUnknownNoROHS3 CompliantLead Free----2 V
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