Infineon Technologies IRFL024ZTRPBF

Name: IRFL024ZTRPBF
Brand: Infineon Technologies
SKU: 3813570-IRFL024ZTRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFL024ZTRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3813570-IRFL024ZTRPBF

Description:: MOSFET N-CH 55V 5.1A SOT223

ECAD Model:

Datasheet:: IRFL024ZTRPBF

Specifications

Infineon Technologies IRFL024ZTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFL024ZTRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
57.5MOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Power Dissipation-Max
1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.8W
Case Connection
DRAIN
Turn On Delay Time
7.8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
57.5m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
340pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.1A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Rise Time
21ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
23 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
5.1A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Nominal Vgs
4 V
Height
1.4478mm
Length
6.6802mm
Width
3.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRFL024ZTRPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 340pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5.1A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFL024ZTRPBF Features
a continuous drain current (ID) of 5.1A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 30 ns
a threshold voltage of 4V

IRFL024ZTRPBF Applications
There are a lot of Infineon Technologies
IRFL024ZTRPBF applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IRFL024ZTRPBF More Descriptions

Single N-Channel 55 V 57.5 mOhm 9.1 nC HEXFET® Power Mosfet - SOT-223
Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 55V 5.1A SOT223
Transistor N-MOSFET; Unipolar; 55V; 5.1A; 2.8W; 57,5mΩ; -55°C ~ 150°C; ;
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:5.1A; On Resistance, Rds(on):57.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
Small Signal Field-Effect Transistor, 5.1A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

Product Comparison

The three parts on the right have similar specifications to IRFL024ZTRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Surface Mount

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
IRFL024ZTRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2010

e3

Active

1 (Unlimited)

4

EAR99

57.5MOhm

Matte Tin (Sn)

AVALANCHE RATED, HIGH RELIABILITY

55V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

1A

30

R-PDSO-G4

1

1W Ta

Single

ENHANCEMENT MODE

2.8W

DRAIN

7.8 ns

N-Channel

SWITCHING

57.5m Ω @ 3.1A, 10V

4V @ 250μA

340pF @ 25V

5.1A Ta

14nC @ 10V

21ns

10V

±20V

23 ns

30 ns

5.1A

4V

20V

55V

55V

4 V

1.4478mm

6.6802mm

3.7mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFL210

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

-

-55°C~150°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

2W Ta 3.1W Tc

-

-

-

-

8.2 ns

N-Channel

-

1.5Ohm @ 580mA, 10V

4V @ 250μA

140pF @ 25V

960mA Tc

8.2nC @ 10V

17ns

10V

±20V

8.9 ns

14 ns

960mA

-

20V

200V

-

-

-

-

-

-

-

Non-RoHS Compliant

-

SOT-223

150°C

-55°C

200V

140pF

1.5Ohm

1.5 Ω

-

-

-

-

-

-

IRFL024ZTRPBF vs IRFL210
IRFL9110

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

-

-55°C~150°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-100V

MOSFET (Metal Oxide)

-

-

-

-1.1A

-

-

1

2W Ta 3.1W Tc

-

-

2W

-

-

P-Channel

-

1.2Ohm @ 660mA, 10V

4V @ 250μA

200pF @ 25V

1.1A Tc

8.7nC @ 10V

27ns

10V

±20V

17 ns

15 ns

1.1A

-

20V

-100V

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

SOT-223

150°C

-55°C

100V

200pF

1.2Ohm

1.2 Ω

-

-

-

-

-

-

IRFL024ZTRPBF vs IRFL9110
IRFL4105

Infineon Technologies

-

-

Surface Mount

TO-261-4, TO-261AA

-

SILICON

-55°C~150°C TJ

Tube

HEXFET®

1999

e3

Obsolete

1 (Unlimited)

4

EAR99

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

30

R-PDSO-G4

1

1W Ta

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

-

45m Ω @ 3.7A, 10V

4V @ 250μA

660pF @ 25V

3.7A Ta

35nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

55V

-

-

-

YES

Not Qualified

SINGLE

3.7A

0.045Ohm

55V

IRFL024ZTRPBF vs IRFL4105

Certification

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IRFL024ZTRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3 Tab) SOT-223 RoHS: Compliant	61	1 $0.5016 10 $0.4335 25 $0.4301
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	MOSFET N-CH 55V 5.1A SOT223 RoHS: Compliant	6702	1 $0.83 10 $0.724 100 $0.5583 500 $0.41356 1000 $0.33084
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	MOSFET N-CH 55V 5.1A SOT223 RoHS: Compliant	6702	1 $0.83 10 $0.724 100 $0.5583 500 $0.41356 1000 $0.33084
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	MOSFET N-CH 55V 5.1A SOT223 RoHS: Compliant	5000	2500 $0.29109
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3 Tab) SOT-223 RoHS: Compliant	10000	2500 $0.1643
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3 Tab) SOT-223 RoHS: Compliant	61	35 $0.4301
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 5.1A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	2028	1 $0.1999 10 $0.1939 25 $0.1889 50 $0.1839 100 $0.1799 500 $0.1749 1000 $0.1709
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 5.1A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	2500	2500 $0.2479 5000 $0.2029 10000 $0.1859 15000 $0.1719 25000 $0.1599
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 5.1A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	0	2500 $0.2099 5000 $0.2019 10000 $0.1949 15000 $0.1879 25000 $0.1849
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	MOSFET, N-CH, 55V, 5.1A, SOT-223, Transistor Pola	2456	1 $0.788 10 $0.654 25 $0.581 50 $0.508 100 $0.436 250 $0.41 500 $0.383 1000 $0.356
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	IRFL024ZTRPBF N-channel MOSFET Transistor, 5.1 A, RoHS: Compliant	0	20 $0.68
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	MOSFET MOSFT 55V 5.1A 57.5mOhm 9.1nC RoHS: Compliant	3402	1 $0.69 10 $0.566 100 $0.365 1000 $0.292
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	HEXFET N-CH MOSFET 5.1A 55V SOT-223, RL	2360	40 $0.37 200 $0.29 400 $0.267 800 $0.253
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	International Rectifier		2000	1 $1.5605 257 $0.6242 1283 $0.5462
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	N-Ch 55V 5,1A 2,8W 0,0575R SOT223 RoHS: Compliant	1800	50 $0.246 100 $0.206 500 $0.186 2500 $0.179
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	MOSFET, N-CH, 55V, 5.1A, SOT-223 RoHS: Compliant	2456	1 $1.33 10 $1.16 100 $0.89 500 $0.66 1000 $0.528
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	MOSFET, N-CH, 55V, 5.1A, SOT-223 RoHS: Compliant	2456	5 $0.451 25 $0.371 100 $0.291 250 $0.26 500 $0.228
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3 Tab) SOT-223 RoHS: Compliant	61	10 $0.4365 25 $0.4348
IRFL024ZTRPBF DISTI #IRFL024ZTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3 Tab) SOT-223 RoHS: Compliant	10000	2500 $0.291

IRFL024~~(12)~~
IRFL02~~(12)~~
IRFL0~~(21)~~
IRFL~~(68)~~
IRF~~(69)~~

Infineon Technologies IRFL024ZTRPBF

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