Infineon Technologies IRFH7084TRPBF
- Part Number:
- IRFH7084TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2480383-IRFH7084TRPBF
- Description:
- MOSFET N-CH 40V 100A PQFN
- ECAD Model:
-
- Datasheet:
- IRFH7084TRPBF
Infineon Technologies IRFH7084TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH7084TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max156W Tc
- Element ConfigurationSingle
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.25m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id3.9V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds6560pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
- Rise Time31ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)34 ns
- Turn-Off Delay Time64 ns
- Continuous Drain Current (ID)100A
- Threshold Voltage3.9V
- Gate to Source Voltage (Vgs)20V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFH7084TRPBF Description
The IRFH7084TRPBF is a HEXFET? single N-channel Power MOSFET offering improved gate, avalanche, and dynamic dV/dt ruggedness. The Infineon IRFH7084TRPBF is suitable for half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-DC converters, and DC-to-AC inverters. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRFH7084TRPBF is in the PQFN-8 package with 156W power dissipation.
IRFH7084TRPBF Features
Industry-standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
IRFH7084TRPBF Applications
Battery management systems
Power tools
DC Drives
Electric toys
Inverters
The IRFH7084TRPBF is a HEXFET? single N-channel Power MOSFET offering improved gate, avalanche, and dynamic dV/dt ruggedness. The Infineon IRFH7084TRPBF is suitable for half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-DC converters, and DC-to-AC inverters. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRFH7084TRPBF is in the PQFN-8 package with 156W power dissipation.
IRFH7084TRPBF Features
Industry-standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
IRFH7084TRPBF Applications
Battery management systems
Power tools
DC Drives
Electric toys
Inverters
IRFH7084TRPBF More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHSInfineon SCT
Single N-Channel 40 V 1.25 mOhm 127 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 40A 8-Pin QFN EP T/R
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull
Single N-Channel 40 V 1.25 mOhm 127 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 40A 8-Pin QFN EP T/R
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull
The three parts on the right have similar specifications to IRFH7084TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)REACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureMax Power DissipationNumber of ElementsPower DissipationDrain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthResistanceView Compare
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IRFH7084TRPBF12 WeeksSurface MountSurface Mount8-PowerTDFN8-55°C~150°C TJTape & Reel (TR)HEXFET®2007Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)1156W TcSingle16 nsN-Channel1.25m Ω @ 100A, 10V3.9V @ 150μA6560pF @ 25V100A Tc190nC @ 10V31ns40V10V±20V34 ns64 ns100A3.9V20VNo SVHCNoROHS3 CompliantLead Free----------------- -
-Surface MountSurface Mount8-PowerVDFN8-Cut Tape (CT)HEXFET®2010Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--Single6.4 nsN-Channel6.7mOhm @ 50A, 10V4V @ 100μA2490pF @ 25V16A Ta 89A Tc60nC @ 10V11ns60V--8.2 ns22 ns89A4V20VNo SVHCNoRoHS Compliant-8-PQFN (5x6)150°C-55°C3.6W1100W60V2.49nF39 ns6.7mOhm6.7 mΩ4 V838.2μm5.9944mm5mm-
-
-Surface MountSurface Mount8-PowerVDFN8-Cut Tape (CT)HEXFET®2010Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--Single13 nsN-Channel2.6mOhm @ 50A, 10V4V @ 150μA4490pF @ 20V28A Ta 100A Tc110nC @ 10V13ns40V--28 ns28 ns100A4V20VNo SVHCNoRoHS Compliant-8-PQFN (5x6)150°C-55°C3.6W13.6W40V4.29nF48 ns2.6mOhm2.6 mΩ4 V838.2μm5.9944mm5mm-
-
-Surface MountSurface Mount8-VQFN Exposed Pad8-Cut Tape (CT)HEXFET®2011Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--Single8.4 nsN-Channel4.3mOhm @ 50A, 10V4V @ 100μA2460pF @ 25V22A Ta 100A Tc65nC @ 10V14ns40V--8.3 ns18 ns22A4V20VNo SVHCNoRoHS CompliantLead FreePQFN (5x6)150°C-55°C3.6W13.6W40V2.46nF45 ns4.3mOhm4.3 mΩ4 V900μm6mm5mm4.3MOhm
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