Infineon Technologies IRFH5302TRPBF
- Part Number:
- IRFH5302TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479585-IRFH5302TRPBF
- Description:
- MOSFET N-CH 30V 32A 5X6 PQFN
- ECAD Model:
-
- Datasheet:
- IRFH5302TRPBF
Infineon Technologies IRFH5302TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5302TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance2.1MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- JESD-30 CodeR-PDSO-N5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.6W Ta 100W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation100W
- Case ConnectionDRAIN
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.1m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id2.35V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds4400pF @ 15V
- Current - Continuous Drain (Id) @ 25°C32A Ta 100A Tc
- Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
- Rise Time51ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)32A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)400A
- Nominal Vgs1.8 V
- Height838.2μm
- Length5.9944mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFH5302TRPBF Description
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
IRFH5302TRPBF Features Industry-standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available
IRFH5302TRPBF Applications Battery powered applications Motor control DC-DC Or-ing
IRFH5302TRPBF Features Industry-standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available
IRFH5302TRPBF Applications Battery powered applications Motor control DC-DC Or-ing
IRFH5302TRPBF More Descriptions
MOSFET, N-Channel, 30V, 100A, 2.1 mOhm max, 29 nC Qg, PQFN 5x6 | Infineon IRFH5302TRPBF
Transistor: N-MOSFET; unipolar; HEXFET; 30V; 32A; 3.6W; PQFN5X6
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package, PG-TDSON-8, RoHSInfineon SCT
Single N-Channel 30 V 3.5 mOhm 76 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Trans MOSFET N-CH 30V 32A 8-Pin QFN EP T/R - Tape and Reel
N CHANNEL MOSFET, 30V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0021ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
MOSFET, N-CH, 30V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 100W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor: N-MOSFET; unipolar; HEXFET; 30V; 32A; 3.6W; PQFN5X6
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package, PG-TDSON-8, RoHSInfineon SCT
Single N-Channel 30 V 3.5 mOhm 76 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Trans MOSFET N-CH 30V 32A 8-Pin QFN EP T/R - Tape and Reel
N CHANNEL MOSFET, 30V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0021ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
MOSFET, N-CH, 30V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 100W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to IRFH5302TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureMax Power DissipationElement ConfigurationDrain to Source Voltage (Vdss)Threshold VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxView Compare
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IRFH5302TRPBF12 WeeksSurface MountSurface Mount8-PowerVDFN8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2009Active1 (Unlimited)5EAR992.1MOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALR-PDSO-N51SINGLE WITH BUILT-IN DIODE3.6W Ta 100W TcENHANCEMENT MODE100WDRAIN18 nsN-ChannelSWITCHING2.1m Ω @ 50A, 10V2.35V @ 100μA4400pF @ 15V32A Ta 100A Tc76nC @ 10V51ns4.5V 10V±20V18 ns22 ns32A20V30V400A1.8 V838.2μm5.9944mm5mmNo SVHCNoROHS3 CompliantLead Free------------ -
-Surface MountSurface Mount8-PowerVDFN8--Cut Tape (CT)HEXFET®2010Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--1---100W-6.4 nsN-Channel-6.7mOhm @ 50A, 10V4V @ 100μA2490pF @ 25V16A Ta 89A Tc60nC @ 10V11ns--8.2 ns22 ns89A20V60V-4 V838.2μm5.9944mm5mmNo SVHCNoRoHS Compliant-8-PQFN (5x6)150°C-55°C3.6WSingle60V4V2.49nF39 ns6.7mOhm6.7 mΩ
-
-Surface MountSurface Mount8-PowerTDFN8--Digi-Reel®HEXFET®2013Obsolete1 (Unlimited)--8.5MOhm-MOSFET (Metal Oxide)--1---3.6W-9.1 nsN-Channel-8.5mOhm @ 45A, 10V4V @ 100μA3110pF @ 25V14A Ta 75A Tc72nC @ 10V12ns--6.5 ns20 ns14A20V75V-----No SVHCNoRoHS CompliantLead Free8-PQFN (5x6)150°C-55°C3.6WSingle75V2V3.11nF42 ns8.5mOhm8.5 mΩ
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-Surface MountSurface Mount8-VQFN Exposed Pad8--Cut Tape (CT)HEXFET®2011Obsolete1 (Unlimited)--4.3MOhm-MOSFET (Metal Oxide)--1---3.6W-8.4 nsN-Channel-4.3mOhm @ 50A, 10V4V @ 100μA2460pF @ 25V22A Ta 100A Tc65nC @ 10V14ns--8.3 ns18 ns22A20V40V-4 V900μm6mm5mmNo SVHCNoRoHS CompliantLead FreePQFN (5x6)150°C-55°C3.6WSingle40V4V2.46nF45 ns4.3mOhm4.3 mΩ
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