IRFBE30PBF

Vishay Siliconix IRFBE30PBF

Part Number:
IRFBE30PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2479844-IRFBE30PBF
Description:
MOSFET N-CH 800V 4.1A TO-220AB
ECAD Model:
Datasheet:
IRFBE30PBF

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Specifications
Vishay Siliconix IRFBE30PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBE30PBF.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    3Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    800V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    4.1A
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    800V
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Current
    48A
  • Power Dissipation
    125W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    78nC @ 10V
  • Rise Time
    33ns
  • Drain to Source Voltage (Vdss)
    800V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    82 ns
  • Continuous Drain Current (ID)
    4.1A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    800V
  • Input Capacitance
    1.3nF
  • Recovery Time
    720 ns
  • Drain to Source Resistance
    3Ohm
  • Rds On Max
    3 Ω
  • Nominal Vgs
    4 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFBE30PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.1A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 82 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 3Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFBE30PBF Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)


IRFBE30PBF Applications
There are a lot of Vishay Siliconix
IRFBE30PBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFBE30PBF More Descriptions
Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220AB
IRFBE30PBF N-channel MOSFET Transistor, 4.1 A, 800 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBE30PBF
Trans MOSFET N-CH 800V 4.1A 3-Pin (3 Tab) TO-220AB
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 800V, 4.1A To-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFBE30PBF.
MOSFET, N, 800V, 4.1A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:4.1A; Resistance, Rds On:3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:16A; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2°C/W; Transistors, No. of:1; Voltage, Vds Max:800V
Product Comparison
The three parts on the right have similar specifications to IRFBE30PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    Series
    Number of Terminations
    Termination
    ECCN Code
    Subcategory
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFBE30PBF
    IRFBE30PBF
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    3Ohm
    150°C
    -55°C
    800V
    MOSFET (Metal Oxide)
    4.1A
    1
    1
    800V
    125W Tc
    Single
    48A
    125W
    12 ns
    N-Channel
    3Ohm @ 2.5A, 10V
    4V @ 250μA
    1300pF @ 25V
    4.1A Tc
    78nC @ 10V
    33ns
    800V
    10V
    ±20V
    30 ns
    82 ns
    4.1A
    4V
    20V
    800V
    1.3nF
    720 ns
    3Ohm
    3 Ω
    4 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB9N30A
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    TO-220AB
    -
    -55°C~150°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    -
    -
    -
    300V
    MOSFET (Metal Oxide)
    9.3A
    -
    -
    -
    96W Tc
    -
    -
    -
    -
    N-Channel
    450mOhm @ 5.6A, 10V
    4V @ 250μA
    920pF @ 25V
    9.3A Tc
    33nC @ 10V
    25ns
    300V
    10V
    ±30V
    -
    -
    9.3A
    -
    -
    -
    920pF
    -
    -
    450 mΩ
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB4310ZPBF
    12 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    6MOhm
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    -
    250W Tc
    Single
    -
    250W
    20 ns
    N-Channel
    6m Ω @ 75A, 10V
    4V @ 150μA
    6860pF @ 50V
    120A Tc
    170nC @ 10V
    60ns
    -
    10V
    ±20V
    57 ns
    55 ns
    140A
    4V
    20V
    100V
    -
    40 ns
    -
    -
    4 V
    9.017mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    SILICON
    HEXFET®
    3
    Through Hole
    EAR99
    FET General Purpose Power
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-220AB
    560A
    100V
    -
  • IRFB23N20DPBF
    14 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2000
    Not For New Designs
    1 (Unlimited)
    100MOhm
    -
    -
    200V
    MOSFET (Metal Oxide)
    24A
    1
    -
    -
    3.8W Ta 170W Tc
    Single
    -
    170W
    14 ns
    N-Channel
    100m Ω @ 14A, 10V
    5.5V @ 250μA
    1960pF @ 25V
    24A Tc
    86nC @ 10V
    32ns
    -
    10V
    ±30V
    16 ns
    26 ns
    24A
    5.5V
    30V
    200V
    -
    -
    -
    -
    5.5 V
    4.69mm
    10.54mm
    4.699mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    SILICON
    HEXFET®
    3
    Through Hole
    EAR99
    FET General Purpose Power
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-220AB
    96A
    200V
    250 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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