Vishay Siliconix IRFBE30PBF
- Part Number:
- IRFBE30PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479844-IRFBE30PBF
- Description:
- MOSFET N-CH 800V 4.1A TO-220AB
- Datasheet:
- IRFBE30PBF
Vishay Siliconix IRFBE30PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBE30PBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance3Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC800V
- TechnologyMOSFET (Metal Oxide)
- Current Rating4.1A
- Number of Elements1
- Number of Channels1
- Voltage800V
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Current48A
- Power Dissipation125W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.1A Tc
- Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
- Rise Time33ns
- Drain to Source Voltage (Vdss)800V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time82 ns
- Continuous Drain Current (ID)4.1A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage800V
- Input Capacitance1.3nF
- Recovery Time720 ns
- Drain to Source Resistance3Ohm
- Rds On Max3 Ω
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFBE30PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.1A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 82 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 3Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFBE30PBF Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)
IRFBE30PBF Applications
There are a lot of Vishay Siliconix
IRFBE30PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.1A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 82 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 3Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFBE30PBF Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)
IRFBE30PBF Applications
There are a lot of Vishay Siliconix
IRFBE30PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFBE30PBF More Descriptions
Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220AB
IRFBE30PBF N-channel MOSFET Transistor, 4.1 A, 800 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBE30PBF
Trans MOSFET N-CH 800V 4.1A 3-Pin (3 Tab) TO-220AB
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 800V, 4.1A To-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFBE30PBF.
MOSFET, N, 800V, 4.1A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:4.1A; Resistance, Rds On:3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:16A; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2°C/W; Transistors, No. of:1; Voltage, Vds Max:800V
IRFBE30PBF N-channel MOSFET Transistor, 4.1 A, 800 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBE30PBF
Trans MOSFET N-CH 800V 4.1A 3-Pin (3 Tab) TO-220AB
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 800V, 4.1A To-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFBE30PBF.
MOSFET, N, 800V, 4.1A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:4.1A; Resistance, Rds On:3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:16A; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2°C/W; Transistors, No. of:1; Voltage, Vds Max:800V
The three parts on the right have similar specifications to IRFBE30PBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialSeriesNumber of TerminationsTerminationECCN CodeSubcategoryOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)View Compare
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IRFBE30PBF8 WeeksTinThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2008Active1 (Unlimited)3Ohm150°C-55°C800VMOSFET (Metal Oxide)4.1A11800V125W TcSingle48A125W12 nsN-Channel3Ohm @ 2.5A, 10V4V @ 250μA1300pF @ 25V4.1A Tc78nC @ 10V33ns800V10V±20V30 ns82 ns4.1A4V20V800V1.3nF720 ns3Ohm3 Ω4 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free--------------
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--Through HoleThrough HoleTO-220-3-TO-220AB--55°C~150°C TJTube2009Obsolete1 (Unlimited)---300VMOSFET (Metal Oxide)9.3A---96W Tc----N-Channel450mOhm @ 5.6A, 10V4V @ 250μA920pF @ 25V9.3A Tc33nC @ 10V25ns300V10V±30V--9.3A---920pF--450 mΩ------Non-RoHS CompliantContains Lead-------------
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12 Weeks-Through HoleThrough HoleTO-220-33---55°C~175°C TJTube2008Active1 (Unlimited)6MOhm---MOSFET (Metal Oxide)-1--250W TcSingle-250W20 nsN-Channel6m Ω @ 75A, 10V4V @ 150μA6860pF @ 50V120A Tc170nC @ 10V60ns-10V±20V57 ns55 ns140A4V20V100V-40 ns--4 V9.017mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead FreeSILICONHEXFET®3Through HoleEAR99FET General Purpose PowerENHANCEMENT MODEDRAINSWITCHINGTO-220AB560A100V-
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14 WeeksTinThrough HoleThrough HoleTO-220-33---55°C~175°C TJTube2000Not For New Designs1 (Unlimited)100MOhm--200VMOSFET (Metal Oxide)24A1--3.8W Ta 170W TcSingle-170W14 nsN-Channel100m Ω @ 14A, 10V5.5V @ 250μA1960pF @ 25V24A Tc86nC @ 10V32ns-10V±30V16 ns26 ns24A5.5V30V200V----5.5 V4.69mm10.54mm4.699mmNo SVHCNoROHS3 CompliantContains Lead, Lead FreeSILICONHEXFET®3Through HoleEAR99FET General Purpose PowerENHANCEMENT MODEDRAINSWITCHINGTO-220AB96A200V250 mJ
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