Vishay Siliconix IRFBC30LPBF
- Part Number:
- IRFBC30LPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2489034-IRFBC30LPBF
- Description:
- MOSFET N-CH 600V 3.6A TO-262
- Datasheet:
- IRFBC30LPBF
Vishay Siliconix IRFBC30LPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC30LPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Supplier Device PackageTO-262-3
- Weight2.387001g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max3.1W Ta 74W Tc
- Element ConfigurationSingle
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.2Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.6A Tc
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Rise Time13ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)3.6A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Input Capacitance660pF
- Drain to Source Resistance2.2Ohm
- Rds On Max2.2 Ω
- Height9.65mm
- Length10.67mm
- Width4.83mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IRFBC30LPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 660pF @ 25V.This device has a continuous drain current (ID) of [3.6A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.MOSFETs have 2.2Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFBC30LPBF Features
a continuous drain current (ID) of 3.6A
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC30LPBF Applications
There are a lot of Vishay Siliconix
IRFBC30LPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 660pF @ 25V.This device has a continuous drain current (ID) of [3.6A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.MOSFETs have 2.2Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFBC30LPBF Features
a continuous drain current (ID) of 3.6A
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC30LPBF Applications
There are a lot of Vishay Siliconix
IRFBC30LPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFBC30LPBF More Descriptions
MOSFET N-CH 600V 3.6A TO-262
MOSFET N-CHANNEL 600V
MOSFET N-CHANNEL 600V
The three parts on the right have similar specifications to IRFBC30LPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusFactory Lead TimeSeriesECCN CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Lead FreeTransistor Element MaterialNumber of TerminationsTerminationResistanceSubcategoryNumber of ElementsOperating ModePower DissipationCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageRecovery TimeNominal VgsContact PlatingVoltage - Rated DCCurrent RatingAvalanche Energy Rating (Eas)View Compare
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IRFBC30LPBFThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3TO-262-32.387001g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)13.1W Ta 74W TcSingle11 nsN-Channel2.2Ohm @ 2.2A, 10V4V @ 250μA660pF @ 25V3.6A Tc31nC @ 10V13ns600V10V±20V14 ns35 ns3.6A4V20V660pF2.2Ohm2.2 Ω9.65mm10.67mm4.83mmUnknownNoROHS3 Compliant---------------------------
-
Through HoleThrough HoleTO-220-33-6.000006g-55°C~175°C TJTube2001Active1 (Unlimited)--MOSFET (Metal Oxide)1125W TcSingle11 nsN-Channel8.4m Ω @ 46A, 10V3.7V @ 100μA4020pF @ 25V76A Tc109nC @ 10V48ns75V6V 10V±20V39 ns51 ns76A-20V---16.51mm10.67mm4.83mmNo SVHC-ROHS3 Compliant12 WeeksHEXFET®, StrongIRFET™EAR99NOT SPECIFIEDNOT SPECIFIEDLead Free--------------------
-
Through HoleThrough HoleTO-220-33---55°C~175°C TJTube2008Active1 (Unlimited)--MOSFET (Metal Oxide)-250W TcSingle20 nsN-Channel6m Ω @ 75A, 10V4V @ 150μA6860pF @ 50V120A Tc170nC @ 10V60ns-10V±20V57 ns55 ns140A4V20V---9.017mm10.668mm4.826mmNo SVHCNoROHS3 Compliant12 WeeksHEXFET®EAR99--Lead FreeSILICON3Through Hole6MOhmFET General Purpose Power1ENHANCEMENT MODE250WDRAINSWITCHINGTO-220AB100V560A100V40 ns4 V----
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Through HoleThrough HoleTO-220-33---55°C~175°C TJTube2000Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)-3.8W Ta 170W TcSingle14 nsN-Channel100m Ω @ 14A, 10V5.5V @ 250μA1960pF @ 25V24A Tc86nC @ 10V32ns-10V±30V16 ns26 ns24A5.5V30V---4.69mm10.54mm4.699mmNo SVHCNoROHS3 Compliant14 WeeksHEXFET®EAR99--Contains Lead, Lead FreeSILICON3Through Hole100MOhmFET General Purpose Power1ENHANCEMENT MODE170WDRAINSWITCHINGTO-220AB200V96A200V-5.5 VTin200V24A250 mJ
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