IRFBC30LPBF

Vishay Siliconix IRFBC30LPBF

Part Number:
IRFBC30LPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2489034-IRFBC30LPBF
Description:
MOSFET N-CH 600V 3.6A TO-262
ECAD Model:
Datasheet:
IRFBC30LPBF

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Specifications
Vishay Siliconix IRFBC30LPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC30LPBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Number of Pins
    3
  • Supplier Device Package
    TO-262-3
  • Weight
    2.387001g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    3.1W Ta 74W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2.2Ohm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    660pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 10V
  • Rise Time
    13ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    3.6A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    660pF
  • Drain to Source Resistance
    2.2Ohm
  • Rds On Max
    2.2 Ω
  • Height
    9.65mm
  • Length
    10.67mm
  • Width
    4.83mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
IRFBC30LPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 660pF @ 25V.This device has a continuous drain current (ID) of [3.6A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.MOSFETs have 2.2Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFBC30LPBF Features
a continuous drain current (ID) of 3.6A
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


IRFBC30LPBF Applications
There are a lot of Vishay Siliconix
IRFBC30LPBF applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFBC30LPBF More Descriptions
MOSFET N-CH 600V 3.6A TO-262
MOSFET N-CHANNEL 600V
Product Comparison
The three parts on the right have similar specifications to IRFBC30LPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Series
    ECCN Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Lead Free
    Transistor Element Material
    Number of Terminations
    Termination
    Resistance
    Subcategory
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Contact Plating
    Voltage - Rated DC
    Current Rating
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFBC30LPBF
    IRFBC30LPBF
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    TO-262-3
    2.387001g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    3.1W Ta 74W Tc
    Single
    11 ns
    N-Channel
    2.2Ohm @ 2.2A, 10V
    4V @ 250μA
    660pF @ 25V
    3.6A Tc
    31nC @ 10V
    13ns
    600V
    10V
    ±20V
    14 ns
    35 ns
    3.6A
    4V
    20V
    660pF
    2.2Ohm
    2.2 Ω
    9.65mm
    10.67mm
    4.83mm
    Unknown
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB7787PBF
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    6.000006g
    -55°C~175°C TJ
    Tube
    2001
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    125W Tc
    Single
    11 ns
    N-Channel
    8.4m Ω @ 46A, 10V
    3.7V @ 100μA
    4020pF @ 25V
    76A Tc
    109nC @ 10V
    48ns
    75V
    6V 10V
    ±20V
    39 ns
    51 ns
    76A
    -
    20V
    -
    -
    -
    16.51mm
    10.67mm
    4.83mm
    No SVHC
    -
    ROHS3 Compliant
    12 Weeks
    HEXFET®, StrongIRFET™
    EAR99
    NOT SPECIFIED
    NOT SPECIFIED
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB4310ZPBF
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    250W Tc
    Single
    20 ns
    N-Channel
    6m Ω @ 75A, 10V
    4V @ 150μA
    6860pF @ 50V
    120A Tc
    170nC @ 10V
    60ns
    -
    10V
    ±20V
    57 ns
    55 ns
    140A
    4V
    20V
    -
    -
    -
    9.017mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    12 Weeks
    HEXFET®
    EAR99
    -
    -
    Lead Free
    SILICON
    3
    Through Hole
    6MOhm
    FET General Purpose Power
    1
    ENHANCEMENT MODE
    250W
    DRAIN
    SWITCHING
    TO-220AB
    100V
    560A
    100V
    40 ns
    4 V
    -
    -
    -
    -
  • IRFB23N20DPBF
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2000
    Not For New Designs
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    3.8W Ta 170W Tc
    Single
    14 ns
    N-Channel
    100m Ω @ 14A, 10V
    5.5V @ 250μA
    1960pF @ 25V
    24A Tc
    86nC @ 10V
    32ns
    -
    10V
    ±30V
    16 ns
    26 ns
    24A
    5.5V
    30V
    -
    -
    -
    4.69mm
    10.54mm
    4.699mm
    No SVHC
    No
    ROHS3 Compliant
    14 Weeks
    HEXFET®
    EAR99
    -
    -
    Contains Lead, Lead Free
    SILICON
    3
    Through Hole
    100MOhm
    FET General Purpose Power
    1
    ENHANCEMENT MODE
    170W
    DRAIN
    SWITCHING
    TO-220AB
    200V
    96A
    200V
    -
    5.5 V
    Tin
    200V
    24A
    250 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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