Infineon Technologies IRFB7545PBF

Name: IRFB7545PBF
Brand: Infineon Technologies
SKU: 2483316-IRFB7545PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFB7545PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483316-IRFB7545PBF

Description:: MOSFET N CH 60V 95A TO-220AB

ECAD Model:

Datasheet:: IRFB7545PBF

Specifications

Infineon Technologies IRFB7545PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB7545PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
6.000006g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®, StrongIRFET™
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Channels
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Power Dissipation
125W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5.9m Ω @ 57A, 10V
Vgs(th) (Max) @ Id
3.7V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
4010pF @ 25V
Current - Continuous Drain (Id) @ 25°C
95A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
72ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
43 ns
Turn-Off Delay Time
44 ns
Continuous Drain Current (ID)
95A
Threshold Voltage
3.7V
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Length
10.67mm
Width
4.83mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFB7545PBF Description
The IRFB7545PBF is a HEXFET? N-channel Power MOSFET offering improved gate, avalanche, and dynamic dV/dt ruggedness. The Infineon IRFB7545PBF is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRFB7545PBF is in the TO-220-3 package with 125w power dissipation.

IRFB7545PBF Features
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
In the TO-220-3 package

IRFB7545PBF Applications
Brushed motor drive applications
BLDC motor drive applications
Battery-powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters

IRFB7545PBF More Descriptions

MOSFET Transistor N-Channel 60 V 95A (Tc) 125W (Tc) Through Hole TO-220
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 60 V 5.9 mOhm 75 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 60V 95A 3-Pin TO-220AB Tube - Rail/Tube
Power Field-Effect Transistor, 95A I(D), 60V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

Product Comparison

The three parts on the right have similar specifications to IRFB7545PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Supplier Device Package

Voltage - Rated DC

Current Rating

Input Capacitance

Rds On Max

Max Operating Temperature

Min Operating Temperature

Drain to Source Breakdown Voltage

Drain to Source Resistance

Contact Plating

Transistor Element Material

Number of Terminations

Termination

Resistance

Subcategory

Number of Elements

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Radiation Hardening

View Compare
IRFB7545PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

6.000006g

-55°C~175°C TJ

Tube

HEXFET®, StrongIRFET™

2008

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

1

125W Tc

Single

125W

12 ns

N-Channel

5.9m Ω @ 57A, 10V

3.7V @ 100μA

4010pF @ 25V

95A Tc

110nC @ 10V

72ns

60V

6V 10V

±20V

43 ns

44 ns

95A

3.7V

20V

16.51mm

10.67mm

4.83mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB9N30A

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Tube

-

2009

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

-

96W Tc

-

-

-

N-Channel

450mOhm @ 5.6A, 10V

4V @ 250μA

920pF @ 25V

9.3A Tc

33nC @ 10V

25ns

300V

10V

±30V

-

-

9.3A

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

TO-220AB

300V

9.3A

920pF

450 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFB7545PBF vs IRFB9N30A
IRFB16N50KPBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3

3

6.000006g

-55°C~150°C TJ

Tube

-

2004

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

1

280W Tc

Single

280W

20 ns

N-Channel

350mOhm @ 10A, 10V

5V @ 250μA

2210pF @ 25V

17A Tc

89nC @ 10V

77ns

500V

10V

±30V

30 ns

38 ns

17A

-

30V

9.01mm

10.41mm

4.7mm

-

ROHS3 Compliant

Lead Free

TO-220AB

500V

17A

2.21nF

350 mΩ

150°C

-55°C

500V

350mOhm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFB7545PBF vs IRFB16N50KPBF
IRFB23N20DPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

HEXFET®

2000

Not For New Designs

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

-

3.8W Ta 170W Tc

Single

170W

14 ns

N-Channel

100m Ω @ 14A, 10V

5.5V @ 250μA

1960pF @ 25V

24A Tc

86nC @ 10V

32ns

-

10V

±30V

16 ns

26 ns

24A

5.5V

30V

4.69mm

10.54mm

4.699mm

No SVHC

ROHS3 Compliant

Contains Lead, Lead Free

-

200V

24A

-

-

-

-

200V

-

Tin

SILICON

3

Through Hole

100MOhm

FET General Purpose Power

1

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

96A

200V

250 mJ

5.5 V

No

IRFB7545PBF vs IRFB23N20DPBF