Infineon Technologies IRFB4019PBF

Name: IRFB4019PBF
Brand: Infineon Technologies
SKU: 2848835-IRFB4019PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFB4019PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848835-IRFB4019PBF

Description:: MOSFET N-CH 150V 17A TO-220AB

ECAD Model:

Datasheet:: IRFB4019PBF

Specifications

Infineon Technologies IRFB4019PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4019PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
95MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
80W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
80mW
Case Connection
DRAIN
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
AMPLIFIER
Rds On (Max) @ Id, Vgs
95m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
13ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
7.8 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
4.9V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
150V
Dual Supply Voltage
150V
Recovery Time
96 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4.9 V
Height
19.8mm
Length
10.6426mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFB4019PBF Description
IRFB4019PBF is a type of digital audio MOSFET provided by Infineon Technologies utilizing the latest processing techniques for low on-resistance per silicon area. It is able to provide improved efficiency based on low RDS (on), better THD on the basis of low QG and QSW, and lower EMI due to its low QRR. Based on these characteristics, it is well suited for Class-D audio amplifier applications.

IRFB4019PBF Features
Low RDS (on)
Low QG and QSW
Lower EMI
Available in the TO-220AB package
175°C operating junction temperature for ruggedness

IRFB4019PBF Applications
Class-D audio amplifier applications

IRFB4019PBF More Descriptions

150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHSInfineon SCT
Single N-Channel 150 V 95 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 150V 17A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W
Power Field-Effect Transistor, 17A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, N, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:80W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4019; Current Id Max:17A; N-channel Gate Charge:13nC; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80mW; Pulse Current Idm:51A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V

Product Comparison

The three parts on the right have similar specifications to IRFB4019PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Series

Pulsed Drain Current-Max (IDM)

Contact Plating

Avalanche Energy Rating (Eas)

View Compare
IRFB4019PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

2006

Active

1 (Unlimited)

3

Through Hole

EAR99

95MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

1

1

80W Tc

Single

ENHANCEMENT MODE

80mW

DRAIN

7 ns

N-Channel

AMPLIFIER

95m Ω @ 10A, 10V

4.9V @ 50μA

800pF @ 50V

17A Tc

20nC @ 10V

13ns

10V

±20V

7.8 ns

12 ns

17A

4.9V

TO-220AB

20V

150V

150V

96 ns

175°C

4.9 V

19.8mm

10.6426mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB16N50KPBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~150°C TJ

Tube

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

1

280W Tc

Single

-

280W

-

20 ns

N-Channel

-

350mOhm @ 10A, 10V

5V @ 250μA

2210pF @ 25V

17A Tc

89nC @ 10V

77ns

10V

±30V

30 ns

38 ns

17A

-

-

30V

500V

-

-

-

-

9.01mm

10.41mm

4.7mm

-

-

ROHS3 Compliant

Lead Free

TO-220AB

6.000006g

150°C

-55°C

500V

17A

500V

2.21nF

350mOhm

350 mΩ

-

-

-

-

IRFB4019PBF vs IRFB16N50KPBF
IRFB4310ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

2008

Active

1 (Unlimited)

3

Through Hole

EAR99

6MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

1

-

250W Tc

Single

ENHANCEMENT MODE

250W

DRAIN

20 ns

N-Channel

SWITCHING

6m Ω @ 75A, 10V

4V @ 150μA

6860pF @ 50V

120A Tc

170nC @ 10V

60ns

10V

±20V

57 ns

55 ns

140A

4V

TO-220AB

20V

100V

100V

40 ns

-

4 V

9.017mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

HEXFET®

560A

-

-

IRFB4019PBF vs IRFB4310ZPBF
IRFB23N20DPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

2000

Not For New Designs

1 (Unlimited)

3

Through Hole

EAR99

100MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

1

-

3.8W Ta 170W Tc

Single

ENHANCEMENT MODE

170W

DRAIN

14 ns

N-Channel

SWITCHING

100m Ω @ 14A, 10V

5.5V @ 250μA

1960pF @ 25V

24A Tc

86nC @ 10V

32ns

10V

±30V

16 ns

26 ns

24A

5.5V

TO-220AB

30V

200V

200V

-

-

5.5 V

4.69mm

10.54mm

4.699mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

200V

24A

-

-

-

-

HEXFET®

96A

Tin

250 mJ

IRFB4019PBF vs IRFB23N20DPBF