Vishay Siliconix IRF9Z34S

IRF9Z34S Overview
A device's maximal input capacitance is 1100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 140mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF9Z34S Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 140mOhm
a 60V drain to source voltage (Vdss)


IRF9Z34S Applications
There are a lot of Vishay Siliconix
IRF9Z34S applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples