Infineon Technologies IRF9540NPBF

Name: IRF9540NPBF
Brand: Infineon Technologies
SKU: 2849000-IRF9540NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9540NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2849000-IRF9540NPBF

Description:: MOSFET P-CH 100V 23A TO-220AB

ECAD Model:

Datasheet:: IRF9540NPBF

Specifications

Infineon Technologies IRF9540NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9540NPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
117mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
-23A
Time@Peak Reflow Temperature-Max (s)
30
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
117m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
23A Tc
Gate Charge (Qg) (Max) @ Vgs
97nC @ 10V
Rise Time
67ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
51 ns
Turn-Off Delay Time
51 ns
Continuous Drain Current (ID)
-23A
Threshold Voltage
-4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-100V
Pulsed Drain Current-Max (IDM)
76A
Dual Supply Voltage
-100V
Recovery Time
220 ns
Nominal Vgs
-4 V
Height
15.24mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF9540NPBF Discription
Advanced technology IRF9540NPBF to achieve extremely low on-resistance per silicon area, which, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices that can be used in a variety of applications. TO-220 package is the first choice for all commercial industrial applications, with a power consumption level of about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost.
IRF9540NPBF Feature:
Lead-Free
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching P-Channel
Fully Avalanche Rated
IRF9540NPBF Application
commercial industrial applications

IRF9540NPBF More Descriptions

MOSFET, Power; P-Channel; 0.117 Ohms @ -10 V, -11 A; 20 V (Max.); 62 degC/W
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET, P-CHANNEL, -100V, -23A, 117 MOHM, 64.7 NC QG, TO-220
Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3
Transistor MOSFET P-Ch. -23A/-100V TO220 IRF 9540 N PBF
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 140 W
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P Channel Mosfet, -100V, -23A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF9540NPBF.
MOSFET, P, -100V, -23A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:94W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-23A; Current Temperature:25°C; Device Marking:IRF9540N; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State Resistance Max:117mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:94W; Power Dissipation Pd:94W; Pulse Current Idm:76A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V

Product Comparison

The three parts on the right have similar specifications to IRF9540NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Lead Pitch

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

HTS Code

Terminal Position

Terminal Form

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

View Compare
IRF9540NPBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

HEXFET®

1998

e3

Active

1 (Unlimited)

3

Through Hole

EAR99

117mOhm

AVALANCHE RATED, HIGH RELIABILITY

Other Transistors

-100V

MOSFET (Metal Oxide)

250

-23A

30

2.54mm

1

140W Tc

Single

ENHANCEMENT MODE

140W

DRAIN

15 ns

P-Channel

SWITCHING

117m Ω @ 11A, 10V

4V @ 250μA

1300pF @ 25V

23A Tc

97nC @ 10V

67ns

100V

10V

±20V

51 ns

51 ns

-23A

-4V

TO-220AB

20V

-100V

76A

-100V

220 ns

-4 V

15.24mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF9520NS

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e0

Obsolete

1 (Unlimited)

2

-

EAR99

-

AVALANCHE RATED, HIGH RELIABILITY

-

-

MOSFET (Metal Oxide)

225

-

30

-

1

3.8W Ta 48W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

P-Channel

SWITCHING

480m Ω @ 4A, 10V

4V @ 250μA

350pF @ 25V

6.8A Tc

27nC @ 10V

-

100V

10V

±20V

-

-

-

-

-

-

-

27A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

Tin/Lead (Sn/Pb)

8541.29.00.95

SINGLE

GULL WING

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

6.8A

0.48Ohm

100V

140 mJ

-

-

-

-

IRF9540NPBF vs IRF9520NS
IRF9540L

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

P-Channel

-

200mOhm @ 11A, 10V

4V @ 250μA

1400pF @ 25V

19A Tc

61nC @ 10V

-

100V

10V

±20V

-

-

19A

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

I2PAK

3.7W

1.4nF

200 mΩ

IRF9540NPBF vs IRF9540L
IRF9383MTRPBF

Infineon Technologies

12 Weeks

-

Surface Mount

Surface Mount

DirectFET™ Isometric MX

7

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2011

e3

Active

1 (Unlimited)

3

-

EAR99

-

-

Other Transistors

-

MOSFET (Metal Oxide)

-

-

-

-

1

2.1W Ta 113W Tc

-

ENHANCEMENT MODE

2.1W

DRAIN

29 ns

P-Channel

SWITCHING

2.9m Ω @ 22A, 10V

2.4V @ 150μA

7305pF @ 15V

22A Ta 160A Tc

130nC @ 10V

160ns

30V

4.5V 10V

±20V

110 ns

115 ns

22A

-

-

20V

-30V

-

-

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

Matte Tin (Sn)

-

BOTTOM

-

R-XBCC-N3

-

SINGLE WITH BUILT-IN DIODE

-

0.0029Ohm

-

-

-

-

-

-

IRF9540NPBF vs IRF9383MTRPBF

Certification

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IRF9540NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF9540NPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 100V 23A TO-220AB RoHS: Compliant	4523	1 $1.36 10 $1.215 100 $0.9737 500 $0.7695 1000 $0.62101
IRF9540NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 23A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	14950	24 $1.0238 50 $0.7433 100 $0.6579 200 $0.6197
IRF9540NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 23A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	10501	26 $0.3684
IRF9540NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 23A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	1611	14 $1.8125
IRF9540NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 23A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	350	196 $0.512
IRF9540NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 23A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	9010	1 $0.6299 10 $0.5599 25 $0.5039 50 $0.4579 100 $0.4199 500 $0.3869 1000 $0.3599
IRF9540NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 23A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	1 $0.3909 10 $0.3849 25 $0.3799 50 $0.3749 100 $0.3609 500 $0.3489 1000 $0.3429
IRF9540NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 23A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	0
IRF9540NPBF DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, -100V, -23A, TO-220AB, Transist	461	1 $1.11 10 $0.945 100 $0.726 500 $0.642 1000 $0.507 2500 $0.449
IRF9540NPBF. DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, -100V, -23A, TO-220AB, Transist	0	1 $1.13 10 $0.964 100 $0.726 500 $0.642 1000 $0.507 2500 $0.449
IRF9540NPBF DISTI #	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 0.117 RoHS: Compliant	1	1 $2.28 10 $2.01 100 $1.76 500 $1.52 1000 $1.34
IRF9540NPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC RoHS: Compliant	8766	1 $1.11 10 $0.945 100 $0.726 500 $0.642 1000 $0.507 2000 $0.449
IRF9540NPBF DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 23A I(D), 100V, 0.1 RoHS: Compliant	1200	1 $0.58 25 $0.54 100 $0.52 500 $0.5 1000 $0.47
IRF9540NPBF DISTI #	Infineon Technologies AG	23 A, 100 V, 0.117 ohm, P-CHANNEL, Si, POWER, MOSF	80	1 $3.64 34 $2.002 76 $1.82
IRF9540NPBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL 100V 23A TO220AB, TU	1300	50 $0.574 250 $0.488 1000 $0.395 2500 $0.351
IRF9540NPBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL 100V 23A TO220AB, EA	10578	1 $2 10 $0.74 25 $0.72
IRF9540NPBF DISTI #	International Rectifier		8
IRF9540NPBF DISTI #	Infineon Technologies AG	Transistor: P-MOSFET, unipolar, -100V, -23A, 1	1601	1 $0.78 3 $0.69 10 $0.57 100 $0.51
IRF9540NPBF DISTI #	International Rectifier	RoHS: Compliant	280
IRF9540NPBF DISTI #	Infineon Technologies AG	P-Ch 100V 23A 140W 0,117R TO220AB RoHS: Compliant	5830	10 $0.734 50 $0.494 200 $0.434 500 $0.418
IRF9540NPBF DISTI #	Infineon Technologies AG	INSTOCK	8790
IRF9540NPBF DISTI #	Infineon Technologies AG	INSTOCK	3338
IRF9540NPBF DISTI #	Infineon Technologies AG	MOSFET, P, -100V, -23A, TO-220 RoHS: Compliant	12006	1 $1.76 10 $1.5 100 $1.15 500 $1.02 1000 $0.803 2000 $0.716
IRF9540NPBF DISTI #	Infineon Technologies AG	MOSFET, P, -100V, -23A, TO-220 RoHS: Compliant	13994	5 $0.762 25 $0.591 100 $0.565 250 $0.503 500 $0.501
IRF9540NPBF DISTI #	Infineon Technologies AG	Power Field-EffectTransistor,23AI(D),100V,0.117ohm RoHS: Compliant	12888	250 $0.88 12888 $0.8
IRF9540NPBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	7488	1900 $0.3714 7488 $0.3467
IRF9540NPBF DISTI #	INF	RoHS: Compliant	50	1100 $0.8182
IRF9540NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 23A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	1611	5 $1.45 10 $1.17 50 $0.793 100 $0.692
IRF9540NPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 23A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	14950	5 $0.868 10 $0.81 50 $0.588 100 $0.521

IRF9540~~(17)~~
IRF954~~(18)~~
IRF95~~(63)~~
IRF9~~(69)~~
IRF~~(69)~~

Infineon Technologies IRF9540NPBF

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