Infineon Technologies IRF9388TRPBF

Name: IRF9388TRPBF
Brand: Infineon Technologies
SKU: 2478592-IRF9388TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9388TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2478592-IRF9388TRPBF

Description:: MOSFET P-CH 30V 12A 8-SOIC

ECAD Model:

Datasheet:: IRF9388TRPBF

Specifications

Infineon Technologies IRF9388TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9388TRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2005
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
19 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.5m Ω @ 12A, 20V
Vgs(th) (Max) @ Id
2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
1680pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta
Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V
Rise Time
57ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
10V 20V
Vgs (Max)
±25V
Fall Time (Typ)
66 ns
Turn-Off Delay Time
80 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
-1.8V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
96A
Height
1.4986mm
Width
3.9878mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

IRF9388TRPBF Description
IRF9388TRPBF is a HEXFET Power MOSFET from the manufacturer of Infineon Technologies with a voltage of 30V. The operating temperature of IRF9388TRPBF is -55°C~150°C TJ and its maximum power dissipation are 2.5W. IRF9388TRPBF has 8 pins and it is available in an 8-SOIC packaging way. Turn On Delay Time of IRF9388TRPBF is 19 ns and the Turn-Off Delay Time is 80 ns.

IRF9388TRPBF Features
FET Type: P-Channel
Mount: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 12A Ta
Drive Voltage (Max Rds On, Min Rds On): 10V 20V

IRF9388TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRF9388TRPBF More Descriptions

Single P-Channel 30 V 11.9 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 12A 8-Pin SOIC T/R - Tape and Reel
MOSFET, P-CHANNEL, -30V, -12A, 11.9 MOHM, 25VGS, SO-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
MOSFET, P-CH, -30V, -12A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Source Voltage Vds:-30V; On Resistance
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P-CH, -30V, -12A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to IRF9388TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Width

REACH SVHC

Radiation Hardening

RoHS Status

Surface Mount

Additional Feature

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Case Connection

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

Weight

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Number of Channels

Drain to Source Resistance

Length

Lead Free

View Compare
IRF9388TRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2005

e3

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

19 ns

P-Channel

SWITCHING

8.5m Ω @ 12A, 20V

2.4V @ 25μA

1680pF @ 25V

12A Ta

52nC @ 10V

57ns

30V

10V 20V

±25V

66 ns

80 ns

12A

-1.8V

25V

-30V

96A

1.4986mm

3.9878mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF9520NS

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

1

3.8W Ta 48W Tc

-

ENHANCEMENT MODE

-

-

P-Channel

SWITCHING

480m Ω @ 4A, 10V

4V @ 250μA

350pF @ 25V

6.8A Tc

27nC @ 10V

-

100V

10V

±20V

-

-

-

-

-

-

27A

-

-

-

-

Non-RoHS Compliant

YES

AVALANCHE RATED, HIGH RELIABILITY

8541.29.00.95

225

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

DRAIN

6.8A

0.48Ohm

100V

140 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF9388TRPBF vs IRF9520NS
IRF9540L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

-

2016

-

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

P-Channel

-

200mOhm @ 11A, 10V

4V @ 250μA

1400pF @ 25V

19A Tc

61nC @ 10V

-

100V

10V

±20V

-

-

19A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

I2PAK

3.7W

1.4nF

200 mΩ

-

-

-

-

-

-

-

-

-

IRF9388TRPBF vs IRF9540L
IRF9510S

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

3.7W Ta 43W Tc

Single

-

43W

10 ns

P-Channel

-

1.2Ohm @ 2.4A, 10V

4V @ 250μA

200pF @ 25V

4A Tc

8.7nC @ 10V

27ns

100V

10V

±20V

17 ns

15 ns

4A

-

20V

-100V

-

4.83mm

9.65mm

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK

-

200pF

1.2 Ω

1.437803g

175°C

-55°C

-100V

-4A

1

1.2Ohm

10.41mm

Contains Lead

IRF9388TRPBF vs IRF9510S

Certification

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IRF9388~~(3)~~
IRF938~~(9)~~
IRF93~~(44)~~
IRF9~~(69)~~
IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRF9388TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 30V 12A 8-SOIC RoHS: Compliant	8436	1 $0.91 10 $0.801 100 $0.6266 500 $0.4739 1000 $0.38664
IRF9388TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 30V 12A 8-SOIC RoHS: Compliant	8436	1 $0.91 10 $0.801 100 $0.6266 500 $0.4739 1000 $0.38664
IRF9388TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 30V 12A 8-SOIC RoHS: Compliant	8000	4000 $0.34361
IRF9388TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 12A 8-Pin SOIC T/R (Alt: IRF RoHS: Compliant	0
IRF9388TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 12A 8-Pin SOIC T/R - Tape an RoHS: Compliant	0	4000 $0.2209 8000 $0.2129 16000 $0.2059 24000 $0.1989 40000 $0.1949
IRF9388TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 12A 8-Pin SOIC T/R - Cut TR RoHS: Compliant	0	1 $0.2849 40 $0.2749 100 $0.2649 200 $0.2559 500 $0.2479 1000 $0.2399 2000 $0.2329
IRF9388TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 12A 8-Pin SOIC T/R (Alt: SP0 RoHS: Compliant	0	4000 $0.3129 8000 $0.2559 16000 $0.2349 24000 $0.2159 40000 $0.2009
IRF9388TRPBF DISTI #	Infineon Technologies AG	MOSFET, P-CH, -30V, -12A, SOIC-8, Transistor Pola	0	1 $0.72 10 $0.597 25 $0.526 50 $0.456 100 $0.385 250 $0.359 500 $0.334 1000 $0.308
IRF9388TRPBF. DISTI #	Infineon Technologies AG	TRENCH_MOSFETS , ROHS COMPLIANT: YES	0	1 $0.221 8000 $0.213 16000 $0.206 24000 $0.199 40000 $0.195
IRF9388TRPBF DISTI #	Infineon Technologies AG	IRF9388TRPBF P-channel MOSFET Transistor, 12 A, RoHS: Compliant	0	4000 $0.65
IRF9388TRPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT PCh -30V -12A 11.9mOhm 25Vgs RoHS: Compliant	24142	1 $0.72 10 $0.597 100 $0.385 1000 $0.308 4000 $0.26
IRF9388TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL HEXFET 30V 12A SO-8, RL	1220	200 $0.279
IRF9388TRPBF DISTI #	Infineon Technologies AG	MOSFET, P-CH, -30V, -12A, SOIC-8 RoHS: Compliant	0	1 $1.15 10 $0.945 100 $0.609 1000 $0.488 4000 $0.433
IRF9388TRPBF DISTI #	Infineon Technologies AG	MOSFET, P-CH, -30V, -12A, SOIC-8 RoHS: Compliant	80	5 $0.472 25 $0.379 100 $0.285 250 $0.265 500 $0.245

Infineon Technologies IRF9388TRPBF

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