IRF9335TRPBF

Infineon Technologies IRF9335TRPBF

Part Number:
IRF9335TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2482537-IRF9335TRPBF
Description:
MOSFET P-CH 30V 5.4A 8-SOIC
ECAD Model:
Datasheet:
IRF9335TRPBF

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Specifications
Infineon Technologies IRF9335TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9335TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    59MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    9.7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    59m Ω @ 5.4A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 10μA
  • Input Capacitance (Ciss) (Max) @ Vds
    386pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 10V
  • Rise Time
    19ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    -5.4A
  • Threshold Voltage
    -1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Pulsed Drain Current-Max (IDM)
    43A
  • Nominal Vgs
    -1.8 V
  • Height
    1.4986mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF9335TRPBF Overview
A device's maximal input capacitance is 386pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -5.4A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 43A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -1.8V threshold voltage.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRF9335TRPBF Features
a continuous drain current (ID) of -5.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 43A.
a threshold voltage of -1.8V
a 30V drain to source voltage (Vdss)


IRF9335TRPBF Applications
There are a lot of Infineon Technologies
IRF9335TRPBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRF9335TRPBF More Descriptions
Single P-Channel 30 V 59 mOhm 9.1 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 5.4A 8-Pin SOIC N T/R - Tape and Reel
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P-CH, -30V, -5.4A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.4A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to IRF9335TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Surface Mount
    Additional Feature
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Case Connection
    View Compare
  • IRF9335TRPBF
    IRF9335TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2010
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    59MOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    2.5W
    9.7 ns
    P-Channel
    SWITCHING
    59m Ω @ 5.4A, 10V
    2.4V @ 10μA
    386pF @ 25V
    5.4A Ta
    14nC @ 10V
    19ns
    30V
    4.5V 10V
    ±20V
    15 ns
    16 ns
    -5.4A
    -1.8V
    20V
    -30V
    43A
    -1.8 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9520NLPBF
    -
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2005
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.8W Ta 48W Tc
    -
    -
    -
    P-Channel
    -
    480mOhm @ 4A, 10V
    4V @ 250μA
    350pF @ 25V
    6.8A Tc
    27nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-262
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9410
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    1997
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    NOT SPECIFIED
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    30m Ω @ 7A, 10V
    1V @ 250μA
    550pF @ 25V
    7A Ta
    27nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    37A
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    YES
    HIGH RELIABILITY
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    MS-012AA
    7A
    0.03Ohm
    30V
    70 mJ
    -
  • IRF9383MTRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    DirectFET™ Isometric MX
    7
    SILICON
    -40°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2011
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    BOTTOM
    -
    1
    SINGLE WITH BUILT-IN DIODE
    2.1W Ta 113W Tc
    ENHANCEMENT MODE
    2.1W
    29 ns
    P-Channel
    SWITCHING
    2.9m Ω @ 22A, 10V
    2.4V @ 150μA
    7305pF @ 15V
    22A Ta 160A Tc
    130nC @ 10V
    160ns
    30V
    4.5V 10V
    ±20V
    110 ns
    115 ns
    22A
    -
    20V
    -30V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    R-XBCC-N3
    -
    -
    -
    0.0029Ohm
    -
    -
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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