Infineon Technologies IRF9335TRPBF
- Part Number:
- IRF9335TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482537-IRF9335TRPBF
- Description:
- MOSFET P-CH 30V 5.4A 8-SOIC
- Datasheet:
- IRF9335TRPBF
Infineon Technologies IRF9335TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9335TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance59MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time9.7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs59m Ω @ 5.4A, 10V
- Vgs(th) (Max) @ Id2.4V @ 10μA
- Input Capacitance (Ciss) (Max) @ Vds386pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.4A Ta
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Rise Time19ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)-5.4A
- Threshold Voltage-1.8V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Pulsed Drain Current-Max (IDM)43A
- Nominal Vgs-1.8 V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF9335TRPBF Overview
A device's maximal input capacitance is 386pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -5.4A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 43A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -1.8V threshold voltage.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF9335TRPBF Features
a continuous drain current (ID) of -5.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 43A.
a threshold voltage of -1.8V
a 30V drain to source voltage (Vdss)
IRF9335TRPBF Applications
There are a lot of Infineon Technologies
IRF9335TRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 386pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -5.4A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 43A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -1.8V threshold voltage.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF9335TRPBF Features
a continuous drain current (ID) of -5.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 43A.
a threshold voltage of -1.8V
a 30V drain to source voltage (Vdss)
IRF9335TRPBF Applications
There are a lot of Infineon Technologies
IRF9335TRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRF9335TRPBF More Descriptions
Single P-Channel 30 V 59 mOhm 9.1 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 5.4A 8-Pin SOIC N T/R - Tape and Reel
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P-CH, -30V, -5.4A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.4A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans MOSFET P-CH 30V 5.4A 8-Pin SOIC N T/R - Tape and Reel
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P-CH, -30V, -5.4A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.4A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to IRF9335TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageSurface MountAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Case ConnectionView Compare
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IRF9335TRPBF12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2010e3Active1 (Unlimited)8EAR9959MOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODE2.5W9.7 nsP-ChannelSWITCHING59m Ω @ 5.4A, 10V2.4V @ 10μA386pF @ 25V5.4A Ta14nC @ 10V19ns30V4.5V 10V±20V15 ns16 ns-5.4A-1.8V20V-30V43A-1.8 V1.4986mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantLead Free--------------
-
--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®2005-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----3.8W Ta 48W Tc---P-Channel-480mOhm @ 4A, 10V4V @ 250μA350pF @ 25V6.8A Tc27nC @ 10V-100V10V±20V---------------TO-262------------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTubeHEXFET®1997-Obsolete1 (Unlimited)8EAR99-NOT SPECIFIED-MOSFET (Metal Oxide)DUALGULL WING1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODE--N-ChannelSWITCHING30m Ω @ 7A, 10V1V @ 250μA550pF @ 25V7A Ta27nC @ 10V-30V4.5V 10V±20V------37A------Non-RoHS Compliant--YESHIGH RELIABILITYNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedMS-012AA7A0.03Ohm30V70 mJ-
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12 WeeksSurface MountSurface MountDirectFET™ Isometric MX7SILICON-40°C~150°C TJTape & Reel (TR)HEXFET®2011e3Active1 (Unlimited)3EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)BOTTOM-1SINGLE WITH BUILT-IN DIODE2.1W Ta 113W TcENHANCEMENT MODE2.1W29 nsP-ChannelSWITCHING2.9m Ω @ 22A, 10V2.4V @ 150μA7305pF @ 15V22A Ta 160A Tc130nC @ 10V160ns30V4.5V 10V±20V110 ns115 ns22A-20V-30V------NoROHS3 CompliantLead Free-----R-XBCC-N3---0.0029Ohm--DRAIN
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