Infineon Technologies IRF9317TRPBF

Name: IRF9317TRPBF
Brand: Infineon Technologies
SKU: 2482380-IRF9317TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9317TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2482380-IRF9317TRPBF

Description:: MOSFET P-CH 30V 16A 8-SOIC

ECAD Model:

Datasheet:: IRF9317TRPBF

Specifications

Infineon Technologies IRF9317TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9317TRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
10.2MOhm
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
19 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.6m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
2820pF @ 15V
Current - Continuous Drain (Id) @ 25°C
16A Ta
Gate Charge (Qg) (Max) @ Vgs
92nC @ 10V
Rise Time
64ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
120 ns
Turn-Off Delay Time
160 ns
Continuous Drain Current (ID)
-16A
Threshold Voltage
-1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Avalanche Energy Rating (Eas)
330 mJ
Nominal Vgs
-1.8 V
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF9317TRPBF Description
IRF9317TRPBF is a -30V Single P-Channel HEXFET Power MOSFET. The Infineon IRF9317TRPBF features benchmark on-state resistance (RDS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRF9317TRPBF is in the SOIC-8 package with 2.5W power dissipation.

IRF9317TRPBF Features
Optimized for broadest availability from distribution partners
Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)
Reduced design complexity in high-side configuration (vs N-channel device)
Easier interface to Microcontroller (vs N-channel device)

IRF9317TRPBF Applications
Charge and Discharge Switch for Notebook PC Battery Application
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits

IRF9317TRPBF More Descriptions

P CHANNEL, MOSFET, -30V, -16A, SOIC; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A;
Single P-Channel 30 V 10.2 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 16A 8-Pin SOIC N T/R - Tape and Reel
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
MOSFET, P-CH, -30V, -16A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -16A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 16 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 6.6 / Gate-Source Voltage V = 20 / Fall Time ns = 120 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 160 / Turn-ON Delay Time ns = 19 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

Product Comparison

The three parts on the right have similar specifications to IRF9317TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

Terminal Form

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

JESD-609 Code

Terminal Finish

JESD-30 Code

Configuration

Case Connection

Drain-source On Resistance-Max

Weight

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Number of Channels

Drain to Source Resistance

View Compare
IRF9317TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2009

Active

1 (Unlimited)

8

EAR99

10.2MOhm

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

19 ns

P-Channel

SWITCHING

6.6m Ω @ 16A, 10V

2.4V @ 50μA

2820pF @ 15V

16A Ta

92nC @ 10V

64ns

30V

4.5V 10V

±20V

120 ns

160 ns

-16A

-1.8V

20V

-30V

330 mJ

-1.8 V

1.4986mm

4.9784mm

3.9878mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF9540L

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

-

2016

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

P-Channel

-

200mOhm @ 11A, 10V

4V @ 250μA

1400pF @ 25V

19A Tc

61nC @ 10V

-

100V

10V

±20V

-

-

19A

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

I2PAK

3.7W

1.4nF

200 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF9317TRPBF vs IRF9540L
IRF9383MTRPBF

Infineon Technologies

12 Weeks

-

Surface Mount

Surface Mount

DirectFET™ Isometric MX

7

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2011

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

MOSFET (Metal Oxide)

BOTTOM

-

1

2.1W Ta 113W Tc

-

ENHANCEMENT MODE

2.1W

29 ns

P-Channel

SWITCHING

2.9m Ω @ 22A, 10V

2.4V @ 150μA

7305pF @ 15V

22A Ta 160A Tc

130nC @ 10V

160ns

30V

4.5V 10V

±20V

110 ns

115 ns

22A

-

20V

-30V

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

e3

Matte Tin (Sn)

R-XBCC-N3

SINGLE WITH BUILT-IN DIODE

DRAIN

0.0029Ohm

-

-

-

-

-

-

-

IRF9317TRPBF vs IRF9383MTRPBF
IRF9510S

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

3.7W Ta 43W Tc

Single

-

43W

10 ns

P-Channel

-

1.2Ohm @ 2.4A, 10V

4V @ 250μA

200pF @ 25V

4A Tc

8.7nC @ 10V

27ns

100V

10V

±20V

17 ns

15 ns

4A

-

20V

-100V

-

-

4.83mm

10.41mm

9.65mm

-

-

Non-RoHS Compliant

Contains Lead

D2PAK

-

200pF

1.2 Ω

-

-

-

-

-

-

1.437803g

175°C

-55°C

-100V

-4A

1

1.2Ohm

IRF9317TRPBF vs IRF9510S

Certification

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IRF9317TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF9317TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 16A 8-Pin SOIC N T/R RoHS: Compliant	100	24 $1.0901 50 $0.7268 100 $0.5941
IRF9317TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 30V 16A 8-SOIC RoHS: Compliant	827	1 $1.13 10 $0.988 100 $0.7731 500 $0.58466 1000 $0.47703
IRF9317TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 30V 16A 8-SOIC RoHS: Compliant	827	1 $1.13 10 $0.988 100 $0.7731 500 $0.58466 1000 $0.47703
IRF9317TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 30V 16A 8-SOIC RoHS: Compliant	0	4000 $0.42394
IRF9317TRPBF DISTI #	Infineon Technologies AG	MOSFETs	100	10 $0.855 50 $0.57 100 $0.466
IRF9317TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 16A 8-Pin SOIC N T/R (Alt: I RoHS: Compliant	20000	4000 $0.2889 8000 $0.27703 12000 $0.27328 20000 $0.26264 40000 $0.25927 100000 $0.25279 200000 $0.24662
IRF9317TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 16A 8-Pin SOIC N T/R - Tape RoHS: Compliant	0	4000 $0.2729 8000 $0.2629 16000 $0.2539 24000 $0.2449 40000 $0.2409
IRF9317TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 16A 8-Pin SOIC N T/R (Alt: S RoHS: Compliant	0	4000 $0.3679 8000 $0.3009 16000 $0.2759 24000 $0.2549 40000 $0.2369
IRF9317TRPBF DISTI #	Infineon Technologies AG	P CHANNEL, MOSFET, -30V, -16A, SOIC, Transistor P	3918	1 $0.89 25 $0.737 50 $0.606 100 $0.475 250 $0.443 500 $0.412 1000 $0.38
IRF9317TRPBF DISTI #	Infineon Technologies AG	P CHANNEL, MOSFET, -30V, -16A, SOIC, FULL REEL, T	0	1 $0.392 4000 $0.385 8000 $0.379 16000 $0.373 24000 $0.367
IRF9317TRPBF DISTI #	Infineon Technologies AG	IRF9317TRPBF P-channel MOSFET Transistor, 16 A, RoHS: Compliant	0	20 $0.86
IRF9317TRPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT P-Ch -30V -16A 6.6mOhm RoHS: Compliant	422	1 $0.89 10 $0.737 100 $0.475 1000 $0.38 4000 $0.321 8000 $0.309 24000 $0.297
IRF9317TRPBF DISTI #	Infineon Technologies AG	HEXFET P-CH MOSFET 16A 30V SOIC8, PK	1340	20 $0.541 200 $0.385 400 $0.356
IRF9317TRPBF DISTI #	Infineon Technologies AG	HEXFET P-CH MOSFET 16A 30V SOIC8, RL	4200	200 $0.385 400 $0.356
IRF9317TRPBF DISTI #	Infineon Technologies AG	16A, 30V, 0.0066OHM, P-CHANNEL, SI, POWER, MOSFET	80	1 $2.44 15 $1.525 50 $1.342
IRF9317TRPBF DISTI #	Infineon Technologies AG	INSTOCK	129
IRF9317TRPBF DISTI #	INFINEON/IR	SO-8 RoHS: Compliant	5760	4000 $0.4286 5760 $0.4
IRF9317TRPBF DISTI #	Infineon Technologies AG	MOSFET, P-CH, -30V, -16A, SOIC-8 RoHS: Compliant	5897	5 $0.601 50 $0.4 250 $0.396 1000 $0.319 2000 $0.291
IRF9317TRPBF DISTI #	Infineon Technologies AG	MOSFET, P-CH, -30V, -16A, SOIC-8 RoHS: Compliant	5596	1 $1.41 10 $1.17 100 $0.752
IRF9317TRPBF DISTI #	Infineon Technologies AG	MOSFET, P-CH, -30V, -16A, SOIC-8 RoHS: Compliant	0	4000 $0.6
IRF9317TRPBF. DISTI #	Infineon Technologies AG	P CHANNEL, MOSFET, -30V, -16A, SOIC, FUL RoHS: Compliant	0	4000 $0.52 8000 $0.499 12000 $0.499
IRF9317TRPBF. DISTI #	Infineon Technologies AG	P CHANNEL, MOSFET, -30V, -16A, SOIC RoHS: Compliant	1185	1 $1.41 10 $1.17 100 $0.752 1000 $0.602 4000 $0.52

IRF9317~~(2)~~
IRF931~~(4)~~
IRF93~~(44)~~
IRF9~~(69)~~
IRF~~(69)~~

Infineon Technologies IRF9317TRPBF

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