Vishay Siliconix IRF830PBF
- Part Number:
- IRF830PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478770-IRF830PBF
- Description:
- MOSFET N-CH 500V 4.5A TO-220AB
- Datasheet:
- IRF830PBF
Vishay Siliconix IRF830PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF830PBF.
- Factory Lead Time11 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2017
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.5Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating4.5A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max74W Tc
- Element ConfigurationSingle
- Power Dissipation74W
- Turn On Delay Time8.2 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.5Ohm @ 2.7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds610pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.5A Tc
- Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
- Rise Time16ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)4.5A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage500V
- Input Capacitance610pF
- Recovery Time640 ns
- Drain to Source Resistance1.5Ohm
- Rds On Max1.5 Ω
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF830PBF Overview
A device's maximum input capacitance is 610pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF830PBF Features
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 1.5Ohm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IRF830PBF Applications
There are a lot of Vishay Siliconix
IRF830PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 610pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF830PBF Features
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 1.5Ohm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IRF830PBF Applications
There are a lot of Vishay Siliconix
IRF830PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF830PBF More Descriptions
Transistor: N-MOSFET; unipolar; 500V; 4.5A; 1.5ohm; 100W; -65 150 deg.C; THT; TO220
Single N-Channel 500 V 1.5 Ohms Flange Mount Power Mosfet - TO-220-3
MOSFET N-CH 500V 4.5A TO-220AB | Siliconix / Vishay IRF830PBF
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, 4.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:74W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:4.5A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:18A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 500 V 1.5 Ohms Flange Mount Power Mosfet - TO-220-3
MOSFET N-CH 500V 4.5A TO-220AB | Siliconix / Vishay IRF830PBF
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, 4.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:74W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:4.5A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:18A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF830PBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDS Breakdown Voltage-MinView Compare
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IRF830PBF11 WeeksTinThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2017Active1 (Unlimited)1.5Ohm150°C-55°C500VMOSFET (Metal Oxide)4.5A1174W TcSingle74W8.2 nsN-Channel1.5Ohm @ 2.7A, 10V4V @ 250μA610pF @ 25V4.5A Tc38nC @ 10V16ns500V10V±20V16 ns42 ns4.5A4V20V500V610pF640 ns1.5Ohm1.5 Ω4 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free-------------------
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3---55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-1-3.1W Ta 74W Tc---N-Channel1.5 Ω @ 2.7A, 10V4V @ 250μA610pF @ 25V4.5A Tc38nC @ 10V-500V10V±20V--4.5A-------------Non-RoHS Compliant-SILICONe02TIN LEADFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDunknownNOT SPECIFIED4R-PSSO-G2Not QualifiedSINGLEENHANCEMENT MODEDRAINSWITCHING500V
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)-150°C-55°C-MOSFET (Metal Oxide)--13.1W Ta 125W TcSingle-11 nsN-Channel850mOhm @ 4.8A, 10V4V @ 250μA1018pF @ 25V8A Tc38nC @ 10V23ns500V10V±30V19 ns26 ns8A-30V500V1.018nF-850mOhm850 mΩ-4.83mm10.67mm9.65mm--Non-RoHS Compliant-------------------
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--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3I2PAK6.000006g-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°C500VMOSFET (Metal Oxide)8A-1125W TcSingle-14 nsN-Channel850mOhm @ 4.8A, 10V4V @ 250μA1300pF @ 25V8A Tc63nC @ 10V23ns500V10V±20V20 ns49 ns8A-20V500V1.3nF-850mOhm850 mΩ-9.01mm10.41mm4.7mm--Non-RoHS CompliantContains Lead------------------
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