IRF830PBF

Vishay Siliconix IRF830PBF

Part Number:
IRF830PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478770-IRF830PBF
Description:
MOSFET N-CH 500V 4.5A TO-220AB
ECAD Model:
Datasheet:
IRF830PBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix IRF830PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF830PBF.
  • Factory Lead Time
    11 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2017
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    1.5Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    4.5A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    74W Tc
  • Element Configuration
    Single
  • Power Dissipation
    74W
  • Turn On Delay Time
    8.2 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.5Ohm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    610pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    38nC @ 10V
  • Rise Time
    16ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    42 ns
  • Continuous Drain Current (ID)
    4.5A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    610pF
  • Recovery Time
    640 ns
  • Drain to Source Resistance
    1.5Ohm
  • Rds On Max
    1.5 Ω
  • Nominal Vgs
    4 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF830PBF Overview
A device's maximum input capacitance is 610pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF830PBF Features
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 1.5Ohm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)


IRF830PBF Applications
There are a lot of Vishay Siliconix
IRF830PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF830PBF More Descriptions
Transistor: N-MOSFET; unipolar; 500V; 4.5A; 1.5ohm; 100W; -65 150 deg.C; THT; TO220
Single N-Channel 500 V 1.5 Ohms Flange Mount Power Mosfet - TO-220-3
MOSFET N-CH 500V 4.5A TO-220AB | Siliconix / Vishay IRF830PBF
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, 4.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:74W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:4.5A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:18A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRF830PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    DS Breakdown Voltage-Min
    View Compare
  • IRF830PBF
    IRF830PBF
    11 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2017
    Active
    1 (Unlimited)
    1.5Ohm
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    4.5A
    1
    1
    74W Tc
    Single
    74W
    8.2 ns
    N-Channel
    1.5Ohm @ 2.7A, 10V
    4V @ 250μA
    610pF @ 25V
    4.5A Tc
    38nC @ 10V
    16ns
    500V
    10V
    ±20V
    16 ns
    42 ns
    4.5A
    4V
    20V
    500V
    610pF
    640 ns
    1.5Ohm
    1.5 Ω
    4 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF830STRR
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    3.1W Ta 74W Tc
    -
    -
    -
    N-Channel
    1.5 Ω @ 2.7A, 10V
    4V @ 250μA
    610pF @ 25V
    4.5A Tc
    38nC @ 10V
    -
    500V
    10V
    ±20V
    -
    -
    4.5A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    SILICON
    e0
    2
    TIN LEAD
    FET General Purpose Power
    SINGLE
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    SINGLE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    500V
  • IRF840ASTRR
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    3.1W Ta 125W Tc
    Single
    -
    11 ns
    N-Channel
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1018pF @ 25V
    8A Tc
    38nC @ 10V
    23ns
    500V
    10V
    ±30V
    19 ns
    26 ns
    8A
    -
    30V
    500V
    1.018nF
    -
    850mOhm
    850 mΩ
    -
    4.83mm
    10.67mm
    9.65mm
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF840L
    -
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    I2PAK
    6.000006g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    8A
    -
    1
    125W Tc
    Single
    -
    14 ns
    N-Channel
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1300pF @ 25V
    8A Tc
    63nC @ 10V
    23ns
    500V
    10V
    ±20V
    20 ns
    49 ns
    8A
    -
    20V
    500V
    1.3nF
    -
    850mOhm
    850 mΩ
    -
    9.01mm
    10.41mm
    4.7mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.