Infineon Technologies IRF7842PBF
- Part Number:
- IRF7842PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483319-IRF7842PBF
- Description:
- MOSFET N-CH 40V 18A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7842PBF
Infineon Technologies IRF7842PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7842PBF.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5m Ω @ 17A, 10V
- Vgs(th) (Max) @ Id2.25V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4500pF @ 20V
- Current - Continuous Drain (Id) @ 25°C18A Ta
- Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRF7842PBF Description
IRF7842PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 40V. The operating temperature of the IRF7842PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7842PBF has 8 pins and it is available in Tube packaging way.
IRF7842PBF Features
Very Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
IRF7842PBF Applications
Synchronous MOSFET for Notebook Processor Power
Secondary Synchronous Rectification for Isolated DC-DC Converters
Synchronous Fet for Non-Isolated DC-DC Converters
Lead-Free
IRF7842PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 40V. The operating temperature of the IRF7842PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7842PBF has 8 pins and it is available in Tube packaging way.
IRF7842PBF Features
Very Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
IRF7842PBF Applications
Synchronous MOSFET for Notebook Processor Power
Secondary Synchronous Rectification for Isolated DC-DC Converters
Synchronous Fet for Non-Isolated DC-DC Converters
Lead-Free
IRF7842PBF More Descriptions
Transistor MOSFET Negative Channel 40 Volt 18A 8-Pin SOIC
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4 Milliohms;ID 18A;SO-8;PD 2.5W;VGS /-20V
Single N-Channel 40 V 5 mOhm 33 nC HEXFET® Power Mosfet - SOIC-8
IRF7842PBF MOSFET N-CH 40V 18A 8-SOIC RoHS
Small Signal Field-Effect Transistor, 18A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:4.5V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4 Milliohms;ID 18A;SO-8;PD 2.5W;VGS /-20V
Single N-Channel 40 V 5 mOhm 33 nC HEXFET® Power Mosfet - SOIC-8
IRF7842PBF MOSFET N-CH 40V 18A 8-SOIC RoHS
Small Signal Field-Effect Transistor, 18A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:4.5V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF7842PBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimeMountNumber of PinsWeightPbfree CodeNumber of ChannelsElement ConfigurationCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningView Compare
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IRF7842PBFSurface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTubeHEXFET®2004Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)2.5W TaN-Channel5m Ω @ 17A, 10V2.25V @ 250μA4500pF @ 20V18A Ta50nC @ 4.5V40V4.5V 10V±20VROHS3 Compliant---------------------------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)-MOSFET (Metal Oxide)2.5W TcP-Channel60m Ω @ 5.4A, 4.5V700mV @ 250μA780pF @ 15V5.4A Tc22nC @ 4.5V20V2.7V 4.5V±12VNon-RoHS Compliant---------------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)HEXFET®2003Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)2.5W TcN-Channel30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20VNon-RoHS CompliantYESSILICON8LOGIC LEVEL COMPATIBLE8541.29.00.95DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGMS-012AA7.3A0.03Ohm58A30V70 mJ------------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~150°C TJTube-2017Active1 (Unlimited)-MOSFET (Metal Oxide)3.1W Ta 50W TcN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20VROHS3 Compliant-SILICON3--------1-ENHANCEMENT MODESWITCHINGTO-220AB---400V-12 WeeksThrough Hole36.000006gyes1SingleDRAIN10 ns14ns13 ns30 ns3.3A20V9.01mm10.41mm4.7mmNo
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