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IRF7832TRPBF

Infineon Technologies IRF7832TRPBF

Part Number:
IRF7832TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2849288-IRF7832TRPBF
Description:
MOSFET N-CH 30V 20A 8-SOIC
ECAD Model:
Datasheet:
IRF7832TRPBF

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Specifications
Infineon Technologies IRF7832TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7832TRPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~155°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2005
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    4MOhm
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    20A
  • Number of Elements
    1
  • Row Spacing
    6.3 mm
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2.32V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4310pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    20A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    51nC @ 4.5V
  • Rise Time
    6.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    2.32V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Avalanche Energy Rating (Eas)
    260 mJ
  • Recovery Time
    62 ns
  • Max Junction Temperature (Tj)
    155°C
  • Nominal Vgs
    2.32 V
  • Height
    1.75mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRF7832TRPBF Description
The IRF7832TRPBF is a monolithic device that combines a digital signal processor and an instrumentation rectifier.

IRF7832TRPBF Features
At 4.5V VGS, RDS(on) is quite low.
Impedance of the Gate is Extremely Low
Avalanche Voltage and Current are fully characterized.
Maximum VGS Gate Rating: 20V
Rg was tested 100 percent of the time.

IRF7832TRPBF Applications
Notebook Synchronous MOSFET
Processor Capacity
MOSFET Synchronous Rectifier for
DC-DC Converters in Isolated Mode
Systems for Networking
Lead-Free
IRF7832TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS /-20V
Single N-Channel 30V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R / MOSFET N-CH 30V 20A 8-SOIC
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.32V; Power Dissipation:2.5W Rohs Compliant: Yes |Infineon IRF7832TRPBF.
Product Comparison
The three parts on the right have similar specifications to IRF7832TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Row Spacing
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Additional Feature
    HTS Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Subcategory
    Reach Compliance Code
    Pin Count
    Case Connection
    Output Current
    View Compare
  • IRF7832TRPBF
    IRF7832TRPBF
    Infineon Technologies
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~155°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    4MOhm
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    20A
    1
    6.3 mm
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    12 ns
    N-Channel
    SWITCHING
    4m Ω @ 20A, 10V
    2.32V @ 250μA
    4310pF @ 15V
    20A Ta
    51nC @ 4.5V
    6.7ns
    4.5V 10V
    ±20V
    13 ns
    21 ns
    20A
    2.32V
    20V
    30V
    30V
    260 mJ
    62 ns
    155°C
    2.32 V
    1.75mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7201TR
    IRF7201TR
    Infineon Technologies
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    8
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    -
    -
    2.5W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    30m Ω @ 7.3A, 10V
    1V @ 250μA
    550pF @ 25V
    7.3A Tc
    28nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    70 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    LOGIC LEVEL COMPATIBLE
    8541.29.00.95
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    30V
    MS-012AA
    7.3A
    0.03Ohm
    58A
    30V
    -
    -
    -
    -
    -
    IRF7832TRPBF vs IRF7201TR
  • IRF720STRL
    IRF720STRL
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    -
    1
    -
    -
    3.1W Ta 50W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    -
    10V
    ±20V
    -
    -
    3.3A
    -
    -
    -
    -
    190 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    225
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    400V
    -
    -
    -
    13A
    400V
    FET General Purpose Power
    unknown
    3
    DRAIN
    -
    IRF7832TRPBF vs IRF720STRL
  • IRF7204TRPBF
    IRF7204TRPBF
    Infineon Technologies
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    Active
    1 (Unlimited)
    8
    -
    -
    60mOhm
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -5.3A
    1
    -
    -
    2.5W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    4.5V 10V
    ±12V
    68 ns
    100 ns
    -5.3A
    -2.5V
    12V
    -20V
    -20V
    -
    100 ns
    -
    -2.5 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    LOGIC LEVEL COMPATIBLE
    -
    -
    -
    -
    -
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    5.3A
    IRF7832TRPBF vs IRF7204TRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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