Infineon Technologies IRF7832TR

Name: IRF7832TR
Brand: Infineon Technologies
SKU: 2492601-IRF7832TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7832TR

Manufacturer:: Infineon Technologies

Ventron No:: 2492601-IRF7832TR

Description:: MOSFET N-CH 30V 20A 8-SOIC

ECAD Model:

Datasheet:: IRF7832TR

Part Pictures

Specifications

Infineon Technologies IRF7832TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7832TR.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Cut Tape (CT)
Series
HEXFET®
Published
2005
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2.32V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4310pF @ 15V
Current - Continuous Drain (Id) @ 25°C
20A Ta
Gate Charge (Qg) (Max) @ Vgs
51nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
20A
Drain-source On Resistance-Max
0.004Ohm
Pulsed Drain Current-Max (IDM)
160A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
260 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF7832TR Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 260 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4310pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [20A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 160A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).

IRF7832TR Features
the avalanche energy rating (Eas) is 260 mJ
based on its rated peak drain current 160A.
a 30V drain to source voltage (Vdss)

IRF7832TR Applications
There are a lot of Infineon Technologies
IRF7832TR applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

IRF7832TR More Descriptions

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Product Comparison

The three parts on the right have similar specifications to IRF7832TR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Operating Temperature

Additional Feature

HTS Code

Power Dissipation-Max

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Mount

Supplier Device Package

Max Power Dissipation

Continuous Drain Current (ID)

Input Capacitance

Rds On Max

Factory Lead Time

Number of Pins

Resistance

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Output Current

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
IRF7832TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

Cut Tape (CT)

HEXFET®

2005

e3

Obsolete

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

N-Channel

SWITCHING

4m Ω @ 20A, 10V

2.32V @ 250μA

4310pF @ 15V

20A Ta

51nC @ 4.5V

30V

MS-012AA

20A

0.004Ohm

160A

30V

260 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7201TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

Tape & Reel (TR)

HEXFET®

2003

-

Obsolete

1 (Unlimited)

8

EAR99

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

N-Channel

SWITCHING

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

30V

MS-012AA

7.3A

0.03Ohm

58A

30V

70 mJ

Non-RoHS Compliant

-55°C~150°C TJ

LOGIC LEVEL COMPATIBLE

8541.29.00.95

2.5W Tc

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7832TR vs IRF7201TR
IRF710L

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

N-Channel

-

3.6Ohm @ 1.2A, 10V

4V @ 250μA

170pF @ 25V

2A Tc

17nC @ 10V

400V

-

-

-

-

-

-

Non-RoHS Compliant

-55°C~150°C TJ

-

-

-

10V

±20V

Through Hole

I2PAK

3.1W

2A

170pF

3.6 Ω

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7832TR vs IRF710L
IRF7204TRPBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

Tape & Reel (TR)

HEXFET®

1997

-

Active

1 (Unlimited)

8

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

1

-

ENHANCEMENT MODE

P-Channel

SWITCHING

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

20V

-

-

-

-

-

-

ROHS3 Compliant

-55°C~150°C TJ

LOGIC LEVEL COMPATIBLE

-

2.5W Tc

4.5V 10V

±12V

Surface Mount

-

-

-5.3A

-

-

12 Weeks

8

60mOhm

-20V

-5.3A

Single

2.5W

5.3A

14 ns

26ns

68 ns

100 ns

-2.5V

12V

-20V

-20V

100 ns

-2.5 V

1.4986mm

4.9784mm

3.9878mm

No SVHC

No

Contains Lead, Lead Free

IRF7832TR vs IRF7204TRPBF

Certification

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IRF7832TR Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R RoHS: Compliant	3673	1 $1.0138 10 $0.9016 25 $0.8505 100 $0.6877 250 $0.619 500 $0.5591 1000 $0.5041 3000 $0.4537
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFET N-CH 30V 20A 8-SOIC RoHS: Compliant	5808	1 $1.62 10 $1.431 100 $1.1312 500 $0.87724 1000 $0.69255
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFET N-CH 30V 20A 8-SOIC RoHS: Compliant	5808	1 $1.62 10 $1.431 100 $1.1312 500 $0.87724 1000 $0.69255
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFET N-CH 30V 20A 8-SOIC RoHS: Compliant	4000	4000 $0.62755
IRF7832TR DISTI #IRF7832TR	Infineon Technologies AG	MOSFET N-CH 30V 20A 8-SOIC RoHS: Not Compliant	0
IRF7832TR DISTI #IRF7832TR	Infineon Technologies AG	MOSFET N-CH 30V 20A 8-SOIC RoHS: Not Compliant	0
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R RoHS: Compliant	16000	4000 $0.48
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R RoHS: Compliant	14026	20 $1.1475 50 $0.6401 100 $0.5585
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R RoHS: Compliant	3673	16 $0.9019 25 $0.8509 100 $0.6869 250 $0.6183 500 $0.6041
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R - Cut TR RoHS: Compliant	4050	1 $0.9039 40 $0.8779 100 $0.7179 200 $0.7159 500 $0.6489 1000 $0.5399 2000 $0.5379
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R (Alt: IRF RoHS: Compliant	20000	4000 $0.385 8000 $0.37258 12000 $0.36094 20000 $0.35 40000 $0.34478 100000 $0.33971 200000 $0.33478
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R - Tape an RoHS: Compliant	20000	4000 $0.4879 8000 $0.4869 16000 $0.4859 24000 $0.4849 40000 $0.4829
IRF7832TRPBF-1 DISTI #IRF7832TRPBF-1	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R (Alt: IRF RoHS: Compliant	0
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFET, Transistor Polarity:N Channel, Continuou	0	1 $1.47 25 $1.27 50 $1.11 100 $0.965 250 $0.909 500 $0.853 1000 $0.673
IRF7832TRPBF. DISTI #IRF7832TRPBF.	Infineon Technologies AG	TRENCH_MOSFETS ROHS COMPLIANT: YES	0	1 $0.452 8000 $0.45 16000 $0.449 24000 $0.448 40000 $0.447
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 3.1 Mil RoHS: Compliant	0	4000 $1.59
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	Single N-Channel 30V 4.8 mOhm 51 nC HEXFET Power M RoHS: Compliant	11	1 $0.77 100 $0.64 250 $0.62 500 $0.605 1500 $0.555
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	Single N-Channel 30V 4.8 mOhm 51 nC HEXFET Power M RoHS: Compliant	36000	4000 $0.5
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 20A 4mOhm 34nC RoHS: Compliant	13785	1 $1.34 10 $1.15 100 $0.877 500 $0.775 1000 $0.612
IRF7832TR DISTI #IRF7832TR	International Rectifier		940
IRF7832TRPBF DISTI #IRF7832TRPBF	International Rectifier		447
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	HEXFET N-CH MOSFET 20A 30V SOIC8, RL	360	100 $0.538 500 $0.476 2000 $0.375 4000 $0.333
IRF7832 DISTI #IRF7832	International Rectifier	MOSFET Transistor, N-Channel, SO (Also Known As: I	130669	1 $1.84 1392 $0.506 2965 $0.483
IRF7832TR DISTI #IRF7832TR	International Rectifier	MOSFET Transistor, N-Channel, SO	115500	1 $1.76 1456 $0.484 3100 $0.462
IRF7832TR DISTI #IRF7832TR	TT Electronics Resistors	MOSFET Transistor, N-Channel, SO	8000	1 $1.76 1456 $0.484 3100 $0.462
IRF7832TR DISTI #IRF7832TR	International Rectifier	MOSFET Transistor, N-Channel, SO	24	1 $2.2 3 $1.76 12 $1.1
IRF7832TR DISTI #IRF7832TR	International Rectifier	MOSFET Transistor, N-Channel, SO	44	1 $2.38 3 $1.785 15 $1.4875
IRF7832(TR)PBF DISTI #IRF7832(TR)PBF	International Rectifier	INSTOCK	1042
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG		107
IRF7832TRPBF DISTI #IRF7832TRPBF	International Rectifier		10137
IRF7832TRPBF DISTI #IRF7832TRPBF	International Rectifier	INSTOCK	5380
IRF7832TRPBF DISTI #IRF7832TRPBF	International Rectifier		115
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFET, N CH, 30V, 20A, SOIC-8 RoHS: Compliant	4631	5 $0.739 25 $0.644 100 $0.549 250 $0.518 500 $0.486
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFETs	16000	4000 $0.484
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFETs	266	5 $0.672 25 $0.639 50 $0.564 100 $0.464
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFETs	14026	5 $1.01 10 $0.9 50 $0.502 100 $0.438
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFET, N CH, 30V, 20A, SOIC-8 RoHS: Compliant	0	1 $2.13 10 $1.82 100 $1.39 500 $1.23 1000 $0.969 4000 $0.858
IRF7832TRPBF. DISTI #IRF7832TRPBF.	Infineon Technologies AG	MOSFET RoHS: Compliant	0	1 $2.13 10 $1.82 100 $1.39 500 $1.23 1000 $0.969 4000 $0.858
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	MOSFET, N CH, 30V, 20A, SOIC-8 RoHS: Compliant	4216	1 $2.13 10 $1.82 100 $1.39 500 $1.23 1000 $0.969 4000 $0.858
IRF7832TRPBF DISTI #IRF7832TRPBF	Infineon Technologies AG	RoHS(ship within 1day)	100	1 $2.2 10 $1.65 50 $1.38 100 $1.1 500 $0.94 1000 $0.88

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Infineon Technologies IRF7832TR

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