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IRF7821TRPBF

Infineon Technologies IRF7821TRPBF

Part Number:
IRF7821TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2478646-IRF7821TRPBF
Description:
MOSFET N-CH 30V 13.6A 8-SOIC
ECAD Model:
Datasheet:
IRF7821TRPBF

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Specifications
Infineon Technologies IRF7821TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7821TRPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~155°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2007
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    9.1MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    13.6A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Row Spacing
    6.3 mm
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    6.3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9.1m Ω @ 13A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1010pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    13.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 4.5V
  • Rise Time
    2.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7.3 ns
  • Turn-Off Delay Time
    9.7 ns
  • Continuous Drain Current (ID)
    13.6A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Avalanche Energy Rating (Eas)
    44 mJ
  • Recovery Time
    42 ns
  • Max Junction Temperature (Tj)
    155°C
  • Nominal Vgs
    1 V
  • Height
    1.75mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRF7821TRPBF Description
IRF7821TRPBF is a 30v Single N-Channel HEXFET Power MOSFET. The Infineon IRF7821TRPBF features High-Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. The Operating and Storage Temperature Range is between -55 and 155℃. And the Transistor IRF7821TRPBF is in the SOIC-8 package with 2.5W power dissipation.

IRF7821TRPBF Features
RoHS Compliant
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance

IRF7821TRPBF Applications
Networking 
Computing Systems
Enterprise machine
Enterprise projectors
Wired networking
IRF7821TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS /-20V
Single N-Channel 30 V 9.1 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R - Tape and Reel
Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
N CHANNEL MOSFET, 30V, 13.6A, SOIC; Tran; N CHANNEL MOSFET, 30V, 13.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 7mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; No. of Pins: 8
Product Comparison
The three parts on the right have similar specifications to IRF7821TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Row Spacing
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Additional Feature
    HTS Code
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Reach Compliance Code
    Pin Count
    Case Connection
    Output Current
    View Compare
  • IRF7821TRPBF
    IRF7821TRPBF
    Infineon Technologies
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~155°C TJ
    Tape & Reel (TR)
    HEXFET®
    2007
    e3
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    9.1MOhm
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    13.6A
    30
    1
    6.3 mm
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    6.3 ns
    N-Channel
    SWITCHING
    9.1m Ω @ 13A, 10V
    1V @ 250μA
    1010pF @ 15V
    13.6A Ta
    14nC @ 4.5V
    2.7ns
    4.5V 10V
    ±20V
    7.3 ns
    9.7 ns
    13.6A
    1V
    20V
    30V
    30V
    44 mJ
    42 ns
    155°C
    1 V
    1.75mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7201TR
    IRF7201TR
    Infineon Technologies
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    -
    Obsolete
    1 (Unlimited)
    8
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    1
    -
    -
    2.5W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    30m Ω @ 7.3A, 10V
    1V @ 250μA
    550pF @ 25V
    7.3A Tc
    28nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    70 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    LOGIC LEVEL COMPATIBLE
    8541.29.00.95
    R-PDSO-G8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    30V
    MS-012AA
    7.3A
    0.03Ohm
    58A
    30V
    -
    -
    -
    -
    IRF7821TRPBF vs IRF7201TR
  • IRF720STRL
    IRF720STRL
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    -
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    225
    -
    NOT SPECIFIED
    1
    -
    -
    3.1W Ta 50W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    -
    10V
    ±20V
    -
    -
    3.3A
    -
    -
    -
    -
    190 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    400V
    -
    -
    -
    13A
    400V
    unknown
    3
    DRAIN
    -
    IRF7821TRPBF vs IRF720STRL
  • IRF7204TRPBF
    IRF7204TRPBF
    Infineon Technologies
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    -
    Active
    1 (Unlimited)
    8
    -
    -
    60mOhm
    -
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -5.3A
    -
    1
    -
    -
    2.5W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    4.5V 10V
    ±12V
    68 ns
    100 ns
    -5.3A
    -2.5V
    12V
    -20V
    -20V
    -
    100 ns
    -
    -2.5 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    LOGIC LEVEL COMPATIBLE
    -
    -
    -
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    5.3A
    IRF7821TRPBF vs IRF7204TRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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