Infineon Technologies IRF7821TR

Name: IRF7821TR
Brand: Infineon Technologies
SKU: 2853499-IRF7821TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7821TR

Manufacturer:: Infineon Technologies

Ventron No:: 2853499-IRF7821TR

Description:: MOSFET N-CH 30V 13.6A 8-SOIC

ECAD Model:

Datasheet:: IRF7821

Specifications

Infineon Technologies IRF7821TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7821TR.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~155°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.1m Ω @ 13A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13.6A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
13.6A
Drain-source On Resistance-Max
0.0091Ohm
Pulsed Drain Current-Max (IDM)
100A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
44 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF7821TR Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 44 mJ.The maximum input capacitance of this device is 1010pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 13.6A.There is no pulsed drain current maximum for this device based on its rated peak drain current 100A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IRF7821TR Features
the avalanche energy rating (Eas) is 44 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)

IRF7821TR Applications
There are a lot of Infineon Technologies
IRF7821TR applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRF7821TR More Descriptions

Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R
Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. | MOSFET N-CH 30V 13.6A 8-SOIC
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13.6A; On-Resistance, Rds(on):9.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Drain Source On Resistance @ 10V:9.1mohm RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to IRF7821TR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Additional Feature

HTS Code

Factory Lead Time

Mount

Number of Pins

Weight

Pbfree Code

Number of Channels

Element Configuration

Case Connection

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Height

Length

Width

Radiation Hardening

Resistance

Voltage - Rated DC

Current Rating

Power Dissipation

Output Current

Threshold Voltage

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

REACH SVHC

Lead Free

View Compare
IRF7821TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~155°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Obsolete

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

9.1m Ω @ 13A, 10V

1V @ 250μA

1010pF @ 15V

13.6A Ta

14nC @ 4.5V

30V

4.5V 10V

±20V

MS-012AA

13.6A

0.0091Ohm

100A

30V

44 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7201TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

-

Obsolete

1 (Unlimited)

8

EAR99

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

30V

4.5V 10V

±20V

MS-012AA

7.3A

0.03Ohm

58A

30V

70 mJ

Non-RoHS Compliant

LOGIC LEVEL COMPATIBLE

8541.29.00.95

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7821TR vs IRF7201TR
IRF720LPBF

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

SILICON

-55°C~150°C TJ

Tube

-

2017

-

Active

1 (Unlimited)

3

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

3.1W Ta 50W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

400V

10V

±20V

TO-220AB

-

-

-

400V

-

ROHS3 Compliant

-

-

12 Weeks

Through Hole

3

6.000006g

yes

1

Single

DRAIN

10 ns

14ns

13 ns

30 ns

3.3A

20V

9.01mm

10.41mm

4.7mm

No

-

-

-

-

-

-

-

-

-

-

-

-

IRF7821TR vs IRF720LPBF
IRF7204TRPBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1997

-

Active

1 (Unlimited)

8

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

1

-

2.5W Tc

ENHANCEMENT MODE

P-Channel

SWITCHING

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

20V

4.5V 10V

±12V

-

-

-

-

-

-

ROHS3 Compliant

LOGIC LEVEL COMPATIBLE

-

12 Weeks

Surface Mount

8

-

-

-

Single

-

14 ns

26ns

68 ns

100 ns

-5.3A

12V

1.4986mm

4.9784mm

3.9878mm

No

60mOhm

-20V

-5.3A

2.5W

5.3A

-2.5V

-20V

-20V

100 ns

-2.5 V

No SVHC

Contains Lead, Lead Free

IRF7821TR vs IRF7204TRPBF