IRF7821PBF

Infineon Technologies IRF7821PBF

Part Number:
IRF7821PBF
Manufacturer:
Infineon Technologies
Ventron No:
3586453-IRF7821PBF
Description:
MOSFET N-CH 30V 13.6A 8-SOIC
ECAD Model:
Datasheet:
IRF7821PBF

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Part Pictures
  • IRF7821PBF Detail Images
  • IRF7821PBF Detail Images
Specifications
Infineon Technologies IRF7821PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7821PBF.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Operating Temperature
    -55°C~155°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    2.5W Ta
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9.1m Ω @ 13A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1010pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    13.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
IRF7821PBF Description
IRF7821PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7821PBF is -55??C~155??C TJ and its maximum power dissipation is 2.5W Ta. IRF7821PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7821PBF is 30V.

IRF7821PBF Features
Very Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and Current

IRF7821PBF Applications
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.
Lead-Free
IRF7821PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS /-20V
Transistor MOSFET N Channel 30 Volt 13.6.6 Amp 8 Pin SOIC
Single N-Channel 30 V 12.5 mOhm 14 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC Tube
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13.6A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7821PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
IRF7821PBF Detail Images
Product Comparison
The three parts on the right have similar specifications to IRF7821PBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Mount
    Subcategory
    Reach Compliance Code
    Pin Count
    Case Connection
    Continuous Drain Current (ID)
    Factory Lead Time
    Number of Pins
    Resistance
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Output Current
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    View Compare
  • IRF7821PBF
    IRF7821PBF
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -55°C~155°C TJ
    Tube
    HEXFET®
    2004
    Discontinued
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    9.1m Ω @ 13A, 10V
    1V @ 250μA
    1010pF @ 15V
    13.6A Ta
    14nC @ 4.5V
    30V
    4.5V 10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7201TR
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    2.5W Tc
    N-Channel
    30m Ω @ 7.3A, 10V
    1V @ 250μA
    550pF @ 25V
    7.3A Tc
    28nC @ 10V
    30V
    4.5V 10V
    ±20V
    Non-RoHS Compliant
    YES
    SILICON
    8
    LOGIC LEVEL COMPATIBLE
    8541.29.00.95
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    MS-012AA
    7.3A
    0.03Ohm
    58A
    30V
    70 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    3.1W Ta 50W Tc
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    Non-RoHS Compliant
    -
    SILICON
    2
    -
    -
    SINGLE
    GULL WING
    225
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    -
    -
    -
    13A
    400V
    190 mJ
    Surface Mount
    FET General Purpose Power
    unknown
    3
    DRAIN
    3.3A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7204TRPBF
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    2.5W Tc
    P-Channel
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    20V
    4.5V 10V
    ±12V
    ROHS3 Compliant
    -
    SILICON
    8
    LOGIC LEVEL COMPATIBLE
    -
    DUAL
    GULL WING
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    SWITCHING
    -
    -
    -
    -
    -
    -
    Surface Mount
    -
    -
    -
    -
    -5.3A
    12 Weeks
    8
    60mOhm
    -20V
    -5.3A
    Single
    2.5W
    5.3A
    14 ns
    26ns
    68 ns
    100 ns
    -2.5V
    12V
    -20V
    -20V
    100 ns
    -2.5 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    Contains Lead, Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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