Infineon Technologies IRF7821PBF
- Part Number:
- IRF7821PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586453-IRF7821PBF
- Description:
- MOSFET N-CH 30V 13.6A 8-SOIC
- Datasheet:
- IRF7821PBF
Infineon Technologies IRF7821PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7821PBF.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Operating Temperature-55°C~155°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs9.1m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1010pF @ 15V
- Current - Continuous Drain (Id) @ 25°C13.6A Ta
- Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRF7821PBF Description
IRF7821PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7821PBF is -55??C~155??C TJ and its maximum power dissipation is 2.5W Ta. IRF7821PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7821PBF is 30V.
IRF7821PBF Features
Very Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
IRF7821PBF Applications
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.
Lead-Free
IRF7821PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7821PBF is -55??C~155??C TJ and its maximum power dissipation is 2.5W Ta. IRF7821PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7821PBF is 30V.
IRF7821PBF Features
Very Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
IRF7821PBF Applications
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.
Lead-Free
IRF7821PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS /-20V
Transistor MOSFET N Channel 30 Volt 13.6.6 Amp 8 Pin SOIC
Single N-Channel 30 V 12.5 mOhm 14 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC Tube
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13.6A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7821PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
Transistor MOSFET N Channel 30 Volt 13.6.6 Amp 8 Pin SOIC
Single N-Channel 30 V 12.5 mOhm 14 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC Tube
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13.6A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7821PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF7821PBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)MountSubcategoryReach Compliance CodePin CountCase ConnectionContinuous Drain Current (ID)Factory Lead TimeNumber of PinsResistanceVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationOutput CurrentTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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IRF7821PBFSurface Mount8-SOIC (0.154, 3.90mm Width)-55°C~155°C TJTubeHEXFET®2004Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)2.5W TaN-Channel9.1m Ω @ 13A, 10V1V @ 250μA1010pF @ 15V13.6A Ta14nC @ 4.5V30V4.5V 10V±20VROHS3 Compliant----------------------------------------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)HEXFET®2003Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)2.5W TcN-Channel30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20VNon-RoHS CompliantYESSILICON8LOGIC LEVEL COMPATIBLE8541.29.00.95DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGMS-012AA7.3A0.03Ohm58A30V70 mJ------------------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTape & Reel (TR)-2017Obsolete1 (Unlimited)-MOSFET (Metal Oxide)3.1W Ta 50W TcN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20VNon-RoHS Compliant-SILICON2--SINGLEGULL WING225NOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING---13A400V190 mJSurface MountFET General Purpose Powerunknown3DRAIN3.3A------------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)HEXFET®1997Active1 (Unlimited)-MOSFET (Metal Oxide)2.5W TcP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V20V4.5V 10V±12VROHS3 Compliant-SILICON8LOGIC LEVEL COMPATIBLE-DUALGULL WING----1-ENHANCEMENT MODESWITCHING------Surface Mount-----5.3A12 Weeks860mOhm-20V-5.3ASingle2.5W5.3A14 ns26ns68 ns100 ns-2.5V12V-20V-20V100 ns-2.5 V1.4986mm4.9784mm3.9878mmNo SVHCNoContains Lead, Lead Free
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