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IRF7811A

Infineon Technologies IRF7811A

Part Number:
IRF7811A
Manufacturer:
Infineon Technologies
Ventron No:
2853666-IRF7811A
Description:
MOSFET N-CH 28V 11.4A 8-SOIC
ECAD Model:
Datasheet:
IRF7811A

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Specifications
Infineon Technologies IRF7811A technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7811A.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2007
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Terminal Finish
    Matte Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Ta
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10m Ω @ 11A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1760pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    11A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    28V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V
  • Vgs (Max)
    ±12V
  • JEDEC-95 Code
    MS-012AA
  • Drain Current-Max (Abs) (ID)
    10.8A
  • RoHS Status
    Non-RoHS Compliant
Description
IRF7811A Description
IRF7811A is a 28v HEXFET? Chipset. The IRF7811A employs advanced HEXFET? power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make IRF7811A ideal for high-efficiency DC-DC converters that power the latest generation of microprocessors.

IRF7811A Features
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high-current applications

IRF7811A Applications
Cellular phones 
Laptop computers
Photovoltaic systems 
Wind turbines
Shunt voltage regulator and the series voltage regulator
IRF7811A More Descriptions
28V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):12mohm; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:11.4A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:F7811; Termination Type:SMD
Product Comparison
The three parts on the right have similar specifications to IRF7811A.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    HTS Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    RoHS Status
    Mount
    Reach Compliance Code
    Pin Count
    Operating Mode
    Case Connection
    Continuous Drain Current (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Power Dissipation
    Input Capacitance
    Rds On Max
    Factory Lead Time
    Number of Pins
    Weight
    Pbfree Code
    Number of Channels
    Element Configuration
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    Radiation Hardening
    View Compare
  • IRF7811A
    IRF7811A
    Infineon Technologies
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    2007
    e3
    Obsolete
    1 (Unlimited)
    8
    Matte Tin (Sn)
    8541.29.00.95
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    R-PDSO-G8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    N-Channel
    SWITCHING
    10m Ω @ 11A, 10V
    3V @ 250μA
    1760pF @ 15V
    11A Ta
    26nC @ 4.5V
    28V
    4.5V
    ±12V
    MS-012AA
    10.8A
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    IRF720STRL
    Vishay Siliconix
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    -
    Obsolete
    1 (Unlimited)
    2
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    225
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.1W Ta 50W Tc
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    -
    -
    Non-RoHS Compliant
    Surface Mount
    unknown
    3
    ENHANCEMENT MODE
    DRAIN
    3.3A
    13A
    400V
    190 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF7811A vs IRF720STRL
  • IRF710L
    IRF710L
    Vishay Siliconix
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    400V
    10V
    ±20V
    -
    -
    Non-RoHS Compliant
    Through Hole
    -
    -
    -
    -
    2A
    -
    -
    -
    I2PAK
    3.1W
    170pF
    3.6 Ω
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF7811A vs IRF710L
  • IRF720LPBF
    IRF720LPBF
    Vishay Siliconix
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2017
    -
    Active
    1 (Unlimited)
    3
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    -
    3.1W Ta 50W Tc
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    TO-220AB
    -
    ROHS3 Compliant
    Through Hole
    -
    -
    ENHANCEMENT MODE
    DRAIN
    3.3A
    -
    400V
    -
    -
    -
    -
    -
    12 Weeks
    3
    6.000006g
    yes
    1
    Single
    10 ns
    14ns
    13 ns
    30 ns
    20V
    9.01mm
    10.41mm
    4.7mm
    No
    IRF7811A vs IRF720LPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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