Infineon Technologies IRF7809AV

Name: IRF7809AV
Brand: Infineon Technologies
SKU: 2491925-IRF7809AV
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7809AV

Manufacturer:: Infineon Technologies

Ventron No:: 2491925-IRF7809AV

Description:: MOSFET N-CH 30V 13.3A 8-SOIC

ECAD Model:

Datasheet:: IRF7809AV

Specifications

Infineon Technologies IRF7809AV technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7809AV.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
2005
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3780pF @ 16V
Current - Continuous Drain (Id) @ 25°C
13.3A Ta
Gate Charge (Qg) (Max) @ Vgs
62nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V
Vgs (Max)
±12V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
13.3A
Drain-source On Resistance-Max
0.009Ohm
Pulsed Drain Current-Max (IDM)
100A
DS Breakdown Voltage-Min
30V
RoHS Status
Non-RoHS Compliant

Description

IRF7809AV Description
In order to achieve an unheard-of balance between on-resistance and gate charge, this innovative gadget makes use of cutting-edge HEXFET Power MOSFET technology. It is perfect for high-efficiency DC-DC converters that power the newest generation of microprocessors because to the decreased conduction and switching losses. All crucial synchronous buck converter parameters, including as RDS(on), gate charge, and Cdv/dt-induced turn-on immunity, have been optimized for the IRF7809AV. For synchronous FET applications, the IRF7809AV offers particularly low RDS(on) and strong Cdv/dt immunity.

IRF7809AV Features
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current applications
100% Tested for RG

IRF7809AV Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRF7809AV More Descriptions

Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC
30V 13.3A SINGLE N-CHANNEL HEXFET POWER MOSFET IN A D-Cap Ceramic 1.5uF 50V X7R 10% SMD 1206 125C Embossed T/R

Product Comparison

The three parts on the right have similar specifications to IRF7809AV.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Additional Feature

Avalanche Energy Rating (Eas)

Mount

Subcategory

Reach Compliance Code

Pin Count

Case Connection

Continuous Drain Current (ID)

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

View Compare
IRF7809AV

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tube

HEXFET®

2005

e0

Obsolete

1 (Unlimited)

8

EAR99

Tin/Lead (Sn/Pb)

8541.29.00.95

MOSFET (Metal Oxide)

DUAL

GULL WING

245

30

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

9m Ω @ 15A, 4.5V

1V @ 250μA

3780pF @ 16V

13.3A Ta

62nC @ 5V

30V

4.5V

±12V

MS-012AA

13.3A

0.009Ohm

100A

30V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7201TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

-

Obsolete

1 (Unlimited)

8

EAR99

-

8541.29.00.95

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

30V

4.5V 10V

±20V

MS-012AA

7.3A

0.03Ohm

58A

30V

Non-RoHS Compliant

LOGIC LEVEL COMPATIBLE

70 mJ

-

-

-

-

-

-

-

-

-

-

IRF7809AV vs IRF7201TR
IRF720STRL

Vishay Siliconix

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2017

-

Obsolete

1 (Unlimited)

2

-

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

225

NOT SPECIFIED

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.1W Ta 50W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

400V

10V

±20V

-

-

-

13A

400V

Non-RoHS Compliant

-

190 mJ

Surface Mount

FET General Purpose Power

unknown

3

DRAIN

3.3A

-

-

-

-

IRF7809AV vs IRF720STRL
IRF710L

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

N-Channel

-

3.6Ohm @ 1.2A, 10V

4V @ 250μA

170pF @ 25V

2A Tc

17nC @ 10V

400V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

-

Through Hole

-

-

-

-

2A

I2PAK

3.1W

170pF

3.6 Ω

IRF7809AV vs IRF710L