Infineon Technologies IRF7807ZPBF

Name: IRF7807ZPBF
Brand: Infineon Technologies
SKU: 2492711-IRF7807ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7807ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2492711-IRF7807ZPBF

Description:: HEX/MOS N-CH 30V 11A 8-SOIC

ECAD Model:

Datasheet:: IRF7807Z

Specifications

Infineon Technologies IRF7807ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7807ZPBF.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
13.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
770pF @ 15V
Current - Continuous Drain (Id) @ 25°C
11A Ta
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

IRF7807ZPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 770pF @ 15V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IRF7807ZPBF Features
a 30V drain to source voltage (Vdss)

IRF7807ZPBF Applications
There are a lot of Rochester Electronics, LLC
IRF7807ZPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF7807ZPBF More Descriptions

IRF7807ZPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):13.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:88A; Row Pitch:6.3mm; SMD Marking:IRF7807ZPBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRF7807ZPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Mount

Number of Pins

Published

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Number of Elements

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Radiation Hardening

Lead Free

Surface Mount

Transistor Element Material

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Factory Lead Time

Element Configuration

Output Current

Turn On Delay Time

Threshold Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

View Compare
IRF7807ZPBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8-SO

-55°C~150°C TJ

Tube

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Ta

N-Channel

13.8mOhm @ 11A, 10V

2.25V @ 250μA

770pF @ 15V

11A Ta

11nC @ 4.5V

30V

4.5V 10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7233PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8-SO

-55°C~150°C TJ

Tube

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Ta

P-Channel

20mOhm @ 9.5A, 4.5V

600mV @ 250μA

6000pF @ 10V

9.5A Ta

74nC @ 5V

12V

2.5V 4.5V

±12V

RoHS Compliant

Surface Mount

8

2004

20MOhm

150°C

-55°C

-12V

-9.5A

1

2.5W

540ns

370 ns

77 ns

-9.5A

12V

-12V

6nF

20mOhm

20 mΩ

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7807ZPBF vs IRF7233PBF
IRF7201TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Tc

N-Channel

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

30V

4.5V 10V

±20V

Non-RoHS Compliant

-

-

2003

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

YES

SILICON

8

EAR99

LOGIC LEVEL COMPATIBLE

8541.29.00.95

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

MS-012AA

7.3A

0.03Ohm

58A

30V

70 mJ

-

-

-

-

-

-

-

-

-

-

-

-

IRF7807ZPBF vs IRF7201TR
IRF7204TRPBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Tc

P-Channel

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

20V

4.5V 10V

±12V

ROHS3 Compliant

Surface Mount

8

1997

60mOhm

-

-

-20V

-5.3A

1

2.5W

26ns

68 ns

100 ns

-5.3A

12V

-20V

-

-

-

No

Contains Lead, Lead Free

-

SILICON

8

-

LOGIC LEVEL COMPATIBLE

-

DUAL

GULL WING

-

-

-

-

-

ENHANCEMENT MODE

SWITCHING

-

-

-

-

-

-

12 Weeks

Single

5.3A

14 ns

-2.5V

-20V

100 ns

-2.5 V

1.4986mm

4.9784mm

3.9878mm

No SVHC

IRF7807ZPBF vs IRF7204TRPBF

Certification

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IRF7807~~(48)~~
IRF780~~(80)~~
IRF78~~(83)~~
IRF7~~(80)~~
IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRF7807ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin SOIC Tube	982	1 $0.7105 10 $0.6005 25 $0.5117 100 $0.4574
IRF7807ZTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant	19430	1 $0.91 10 $0.801 100 $0.6266 500 $0.4739 1000 $0.38664
IRF7807ZTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant	19430	1 $0.91 10 $0.801 100 $0.6266 500 $0.4739 1000 $0.38664
IRF7807ZTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant	16000	4000 $0.34361
IRF7807ZPBF DISTI #	Infineon Technologies AG	HEX/MOS N-CH 30V 11A 8-SOIC RoHS: Compliant	0
IRF7807ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin SOIC Tube	982	24 $0.6005 25 $0.5117 100 $0.4574
IRF7807ZPBF DISTI #	Infineon Technologies AG	IRF7807ZPBF N-channel MOSFET Transistor, 11 A, 3 RoHS: Compliant	0	3800 $1.04 7600 $1.019 19000 $0.988 38000 $0.946 95000 $0.884
IRF7807ZPBF DISTI #	Infineon Technologies AG	Small Signal Field-Effect Transistor, 11A I(D), 30 RoHS: Compliant	1710	1 $0.32 25 $0.3 100 $0.29 500 $0.28 1000 $0.26
IRF7807ZPBF DISTI #	International Rectifier	RoHS: Not Compliant	7838	1 $0.32 25 $0.3 100 $0.29 500 $0.28 1000 $0.26
IRF7807ZPBFPRO DISTI #	International Rectifier	RoHS: Not Compliant	854	1 $0.32 25 $0.3 100 $0.29 500 $0.28 1000 $0.26
IRF7807ZPBF DISTI #	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7.2nC RoHS: Compliant	0
IRF7807ZPBF DISTI #	International Rectifier	MOSFET Transistor, N-Channel, SO	59	1 $0.836 7 $0.627 33 $0.418
IRF7807ZPBF DISTI #	International Rectifier	RoHS: Compliant	145
IRF7807ZPBF DISTI #	Infineon Technologies AG	MOSFET, N, LOGIC, SO-8 RoHS: Compliant	0	1 $1.02 10 $0.838 100 $0.678 1000 $0.606 2000 $0.538 5000 $0.5 10000 $0.483 25000 $0.452
IRF7807ZPBF DISTI #	Infineon Technologies AG	MOSFETs	982	10 $0.6005 25 $0.5117 100 $0.4574

Infineon Technologies IRF7807ZPBF

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